Michael Finken

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Dresden, DE

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Patents Grantslast 30 patents

Information Patent Grant
Interlayer dielectric material in a semiconductor device comprising...
- Patent number 8,546,274
- Issue date Oct 1, 2013
- GLOBALFOUNDRIES Inc.
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interlayer dielectric material in a semiconductor device comprising...
- Patent number 8,034,726
- Issue date Oct 11, 2011
- Advanced Micro Devices, Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress transfer by sequentially providing a highly stressed etch st...
- Patent number 7,994,072
- Issue date Aug 9, 2011
- Advanced Micro Devices, Inc.
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interlayer dielectric material in a semiconductor device comprising...
- Patent number 7,875,561
- Issue date Jan 25, 2011
- Advanced Micro Devices, Inc.
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure comprising a field effe...
- Patent number 7,858,531
- Issue date Dec 28, 2010
- Advanced Micro Devices, Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTERLAYER DIELECTRIC MATERIAL IN A SEMICONDUCTOR DEVICE COMPRISING...
- Publication number 20100276790
- Publication date Nov 4, 2010
- GLOBALFOUNDRIES INC.
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERLAYER DIELECTRIC MATERIAL IN A SEMICONDUCTOR DEVICE COMPRISING...
- Publication number 20090166800
- Publication date Jul 2, 2009
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERLAYER DIELECTRIC MATERIAL IN A SEMICONDUCTOR DEVICE COMPRISING...
- Publication number 20090166814
- Publication date Jul 2, 2009
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS TRANSFER BY SEQUENTIALLY PROVIDING A HIGHLY STRESSED ETCH ST...
- Publication number 20090108335
- Publication date Apr 30, 2009
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING A FIELD EFFE...
- Publication number 20090001453
- Publication date Jan 1, 2009
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR HAVING AN INTERLAYER DIELECTRIC MATERIAL HA...
- Publication number 20080203487
- Publication date Aug 28, 2008
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS