Michael Harley-Stead

Person

Portland, ME, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating an enhanced resurf HVPMOS device
- Patent number 7,678,656
- Issue date Mar 16, 2010
- Fairchild Semiconductor Corporation
- Jun Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric hetero-doped high-voltage MOSFET (AH2MOS)
- Patent number 7,649,225
- Issue date Jan 19, 2010
- Fairchild Semiconductor Corporation
- Jun Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced RESURF HVPMOS device with stacked hetero-doping RIM and gr...
- Patent number 7,180,132
- Issue date Feb 20, 2007
- Fairchild Semiconductor Corporation
- Jun Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric hetero-doped high-voltage MOSFET (AH2MOS)
- Patent number 7,125,777
- Issue date Oct 24, 2006
- Fairchild Semiconductor Corporation
- Jun Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for BiCMOS isolated NMOS transistor
- Patent number 6,927,460
- Issue date Aug 9, 2005
- Fairchild Semiconductor Corporation
- Steven M. Leibiger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of compensating for layer thickness by determining device p...
- Patent number 6,770,494
- Issue date Aug 3, 2004
- Fairchild Semiconductor Corporation
- Jason Woloszyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Internally triggered electrostatic device clamp with stand-off voltage
- Patent number 6,646,840
- Issue date Nov 11, 2003
- Fairchild Semiconductor Corporation
- Alvin Sugerman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDD structure for ESD protection and method of fabrication
- Patent number 6,100,125
- Issue date Aug 8, 2000
- Fairchild Semiconductor Corp.
- Ronald Brett Hulfachor
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ASSYMETRIC HETERO-DOPED HIGH-VOLTAGE MOSFET (AH2MOS)
- Publication number 20100084686
- Publication date Apr 8, 2010
- Jun Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED RESURF HVPMOS DEVICE WITH STACKED HETERO-DOPING RIM AND GR...
- Publication number 20070120184
- Publication date May 31, 2007
- Jun Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HETERO-DOPED HIGH-VOLTAGE MOSFET (AH2MOS)
- Publication number 20070040212
- Publication date Feb 22, 2007
- Jun Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhanced resurf HVPMOS device with stacked hetero-doping RIM and gr...
- Publication number 20060057784
- Publication date Mar 16, 2006
- Jun Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric hetero-doped high-voltage MOSFET (AH2MOS)
- Publication number 20060011985
- Publication date Jan 19, 2006
- Jun Cai
- H01 - BASIC ELECTRIC ELEMENTS

Michael Harley-Stead

Person

Patents Grantslast 30 patents

Method of fabricating an enhanced resurf HVPMOS device

Asymmetric hetero-doped high-voltage MOSFET (AH2MOS)

Enhanced RESURF HVPMOS device with stacked hetero-doping RIM and gr...

Asymmetric hetero-doped high-voltage MOSFET (AH2MOS)

Method and structure for BiCMOS isolated NMOS transistor

Process of compensating for layer thickness by determining device p...

Internally triggered electrostatic device clamp with stand-off voltage

LDD structure for ESD protection and method of fabrication

Patents Applicationslast 30 patents

ASSYMETRIC HETERO-DOPED HIGH-VOLTAGE MOSFET (AH2MOS)

ENHANCED RESURF HVPMOS DEVICE WITH STACKED HETERO-DOPING RIM AND GR...

ASYMMETRIC HETERO-DOPED HIGH-VOLTAGE MOSFET (AH2MOS)

Enhanced resurf HVPMOS device with stacked hetero-doping RIM and gr...

Asymmetric hetero-doped high-voltage MOSFET (AH2MOS)