Michael Hell

Person

Erlangen, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide device with a stripe-shaped trench gate structure
- Patent number 12,266,694
- Issue date Apr 1, 2025
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including current spread region
- Patent number 12,176,396
- Issue date Dec 24, 2024
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC devices with shielding structure
- Patent number 12,119,377
- Issue date Oct 15, 2024
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion beam implantation method and semiconductor device
- Patent number 11,908,694
- Issue date Feb 20, 2024
- Infineon Technologies AG
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a silicon carbide device with a trench gate
- Patent number 11,888,032
- Issue date Jan 30, 2024
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor with integrated Schottky diode
- Patent number 11,757,031
- Issue date Sep 12, 2023
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide field-effect transistor including shielding areas
- Patent number 11,626,477
- Issue date Apr 11, 2023
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with trench gate
- Patent number 11,552,173
- Issue date Jan 10, 2023
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including current spread region
- Patent number 11,552,170
- Issue date Jan 10, 2023
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielding structure for SiC devices
- Patent number 11,367,775
- Issue date Jun 21, 2022
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide field-effect transistor including shielding areas
- Patent number 11,101,343
- Issue date Aug 24, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with an implantation tail compensation region
- Patent number 10,957,768
- Issue date Mar 23, 2021
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL POWER SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE (SIC)...
- Publication number 20250089323
- Publication date Mar 13, 2025
- INFINEON TECHNOLOGIES AG
- Thomas AICHINGER
Information Patent Application
POWER SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE (SIC) SEMICOND...
- Publication number 20250089343
- Publication date Mar 13, 2025
- INFINEON TECHNOLOGIES AG
- Andreas HÜRNER
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SUPERJUNCTION-STRUCTURE
- Publication number 20250063775
- Publication date Feb 20, 2025
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BAND GAP SEMICONDUCTOR DEVICE
- Publication number 20250056869
- Publication date Feb 13, 2025
- INFINEON TECHNOLOGIES AG
- Fabian RASINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE
- Publication number 20250015148
- Publication date Jan 9, 2025
- INFINEON TECHNOLOGIES AG
- Thomas AICHINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Field Termination Structure and a Cha...
- Publication number 20240194778
- Publication date Jun 13, 2024
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION BEAM IMPLANTATION METHOD AND SEMICONDUCTOR DEVICE
- Publication number 20240145247
- Publication date May 2, 2024
- INFINEON TECHNOLOGIES AG
- Moriz JELINEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH A STRIPE-SHAPED TRENCH GATE STRUCTURE
- Publication number 20240136406
- Publication date Apr 25, 2024
- INFINEON TECHNOLOGIES AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...
- Publication number 20240096988
- Publication date Mar 21, 2024
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...
- Publication number 20240072122
- Publication date Feb 29, 2024
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shielding Structure for Silicon Carbide Devices
- Publication number 20230163174
- Publication date May 25, 2023
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A TRENCH GATE STRUCTURE
- Publication number 20230163167
- Publication date May 25, 2023
- INFINEON TECHNOLOGIES AG
- Michael HELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A SILICON CARBIDE DEVICE WITH A TRENCH GATE
- Publication number 20230094032
- Publication date Mar 30, 2023
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING CURRENT SPREAD REGION
- Publication number 20230101290
- Publication date Mar 30, 2023
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A DRIFT REGION OF A SUPERJUNCTION DEVICE
- Publication number 20230006038
- Publication date Jan 5, 2023
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shielding Structure for SiC Devices
- Publication number 20220199765
- Publication date Jun 23, 2022
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Devices with Shielding Structure
- Publication number 20220199766
- Publication date Jun 23, 2022
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER TRANSISTOR WITH INTEGRATED SCHOTTKY DIODE
- Publication number 20220059687
- Publication date Feb 24, 2022
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Component
- Publication number 20210343835
- Publication date Nov 4, 2021
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION BEAM IMPLANTATION METHOD AND SEMICONDUCTOR DEVICE
- Publication number 20210193435
- Publication date Jun 24, 2021
- INFINEON TECHNOLOGIES AG
- Moriz JELINEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device with an Implantation Tail Compensation Region
- Publication number 20210104605
- Publication date Apr 8, 2021
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING CURRENT SPREAD REGION
- Publication number 20210091184
- Publication date Mar 25, 2021
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device with Trench Gate
- Publication number 20210050421
- Publication date Feb 18, 2021
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Component
- Publication number 20190341447
- Publication date Nov 7, 2019
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS

Michael Hell

Person

Patents Grantslast 30 patents

Silicon carbide device with a stripe-shaped trench gate structure

Semiconductor device including current spread region

SiC devices with shielding structure

Ion beam implantation method and semiconductor device

Method of producing a silicon carbide device with a trench gate

Power transistor with integrated Schottky diode

Silicon carbide field-effect transistor including shielding areas

Silicon carbide device with trench gate

Semiconductor device including current spread region

Shielding structure for SiC devices

Silicon carbide field-effect transistor including shielding areas

Silicon carbide device with an implantation tail compensation region

Patents Applicationslast 30 patents

VERTICAL POWER SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE (SIC)...

POWER SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE (SIC) SEMICOND...

SEMICONDUCTOR DEVICE HAVING A SUPERJUNCTION-STRUCTURE

WIDE BAND GAP SEMICONDUCTOR DEVICE

TRANSISTOR DEVICE

Semiconductor Device Having a Field Termination Structure and a Cha...

ION BEAM IMPLANTATION METHOD AND SEMICONDUCTOR DEVICE

SILICON CARBIDE DEVICE WITH A STRIPE-SHAPED TRENCH GATE STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...

Shielding Structure for Silicon Carbide Devices

SEMICONDUCTOR DEVICE INCLUDING A TRENCH GATE STRUCTURE

METHOD OF PRODUCING A SILICON CARBIDE DEVICE WITH A TRENCH GATE

SEMICONDUCTOR DEVICE INCLUDING CURRENT SPREAD REGION

METHOD FOR FORMING A DRIFT REGION OF A SUPERJUNCTION DEVICE

Shielding Structure for SiC Devices

SiC Devices with Shielding Structure

POWER TRANSISTOR WITH INTEGRATED SCHOTTKY DIODE

Silicon Carbide Semiconductor Component

ION BEAM IMPLANTATION METHOD AND SEMICONDUCTOR DEVICE

Silicon Carbide Device with an Implantation Tail Compensation Region

SEMICONDUCTOR DEVICE INCLUDING CURRENT SPREAD REGION

Silicon Carbide Device with Trench Gate

Silicon Carbide Semiconductor Component