Michael IN 'T ZANDT

Person

Veldhoven, NL

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor heterojunction device
- Patent number 9,385,226
- Issue date Jul 5, 2016
- NXP B.V.
- Johannes Josephus Theodorus Marinus Donkers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electric field gap device and manufacturing method
- Patent number 9,331,028
- Issue date May 3, 2016
- NXP B.V.
- Michael in 't Zandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electric field gap device and manufacturing method
- Patent number 9,236,734
- Issue date Jan 12, 2016
- NXP B.V.
- Michael in 't Zandt
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Electronic device incorporating a randomized interconnection layer...
- Patent number 9,171,810
- Issue date Oct 27, 2015
- NXP B.V.
- Michael Antoine Armand in't Zandt
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Electric device with phase change resistor
- Patent number 7,791,059
- Issue date Sep 7, 2010
- NXP B.V.
- Frisco J. M. Jedema
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacture
- Patent number 7,671,390
- Issue date Mar 2, 2010
- NXP B.V.
- Jan Sonsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric antifuse for electro-thermally programmable device
- Patent number 7,660,180
- Issue date Feb 9, 2010
- NXP B.V.
- Hans M. B. Boeve
- G11 - INFORMATION STORAGE
Information Patent Grant
Trench-gate transistors and their manufacture
- Patent number 7,361,555
- Issue date Apr 22, 2008
- NXP B.V.
- Gerrit E. J. Koops
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of trench-gate semiconductor devices
- Patent number 7,332,398
- Issue date Feb 19, 2008
- NXP B.V.
- Michael A. A. In't Zandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical insulated gate transistor and manufacturing method
- Patent number 7,262,460
- Issue date Aug 28, 2007
- NXP B.V.
- Jurriaan Schmitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate power semiconductor devices
- Patent number 7,235,842
- Issue date Jun 26, 2007
- NXP B.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of maufacturing a trench-gate semiconductor device
- Patent number 7,199,010
- Issue date Apr 3, 2007
- NXP B.V.
- Erwin A. Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination in MOS transistors
- Patent number 7,160,793
- Issue date Jan 9, 2007
- NXP B.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched semiconductor devices and their manufacture
- Patent number 7,033,889
- Issue date Apr 25, 2006
- Koninklijke Philips Electronics N.V.
- Erwin A. Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched semiconductor devices and their manufacture
- Patent number 6,956,264
- Issue date Oct 18, 2005
- Koninklijke Philips Electronics N.V.
- Erwin A. Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination in MOS transistors
- Patent number 6,936,890
- Issue date Aug 30, 2005
- Koninklijke Philips Electronics N.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination in a trench-gate MOSFET
- Patent number 6,833,583
- Issue date Dec 21, 2004
- Koninklijke Philips Electronics N.V.
- Michael A. A. In't Zandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and their manufacture
- Patent number 6,780,714
- Issue date Aug 24, 2004
- Koninklijke Philips Electronics N.V.
- Mark A. Gajda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of trench-gate semiconductor devices
- Patent number 6,620,669
- Issue date Sep 16, 2003
- Koninklijke Philips Electronics N.V.
- Erwin A. Hijzen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTRODE COATING FOR ELECTRON EMISSION DEVICES WITHIN CAVITIES
- Publication number 20150311024
- Publication date Oct 29, 2015
- NXP B.V.
- Klaus REIMANN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR HETEROJUNCTION DEVICE
- Publication number 20150228774
- Publication date Aug 13, 2015
- NXP B.V.
- Johannes Josephus Theodorus Marinus Donkers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Associated Method
- Publication number 20150179735
- Publication date Jun 25, 2015
- NXP B.V.
- Michael Antoine Armand in't Zandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCORPORATING A RANDOMIZED INTERCONNECTION LAYER
- Publication number 20150137380
- Publication date May 21, 2015
- NXP B.V.
- Michael Antoine Armand in 't Zandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC FIELD GAP DEVICE AND MANUFACTURING METHOD
- Publication number 20150002966
- Publication date Jan 1, 2015
- NXP B.V.
- Michael IN 'T ZANDT
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
ELECTRIC FIELD GAP DEVICE AND MANUFACTURING METHOD
- Publication number 20150001671
- Publication date Jan 1, 2015
- NXP B.V.
- Michael IN 'T ZANDT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC DEVICE WITH PHASE CHANGE RESISTOR
- Publication number 20090127537
- Publication date May 21, 2009
- NXP B.V.
- Friso J. Jedema
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench-Gate Transistors and Their Manufacture
- Publication number 20080150021
- Publication date Jun 26, 2008
- NXP B.V.
- GERRIT E. J. KOOPS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dielectric Antifuse for Electro-Thermally Programmable Device
- Publication number 20080144355
- Publication date Jun 19, 2008
- Koninklijke Philips Electronics N.V.
- Hans M.B. Boeve
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Device and Method for Manufacture
- Publication number 20070246754
- Publication date Oct 25, 2007
- Jan Sonsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench-gate transistors and their manufacture
- Publication number 20070181975
- Publication date Aug 9, 2007
- Koninklijke Philips Electronics N.V.
- Gerrit E.J. Koops
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacture of trench-gate semiconductor devices
- Publication number 20060205222
- Publication date Sep 14, 2006
- Michael A. A. In't Zandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated gate power semiconductor devices
- Publication number 20060189063
- Publication date Aug 24, 2006
- Koninklijke Philips Electronics N.V.
- Raymond J.E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical insulated gate transistor and manufacturing method
- Publication number 20060049453
- Publication date Mar 9, 2006
- Koninklijke Philips Electronics N.V.
- Jurriaan Schmitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a trench-gate semiconductor device
- Publication number 20060017097
- Publication date Jan 26, 2006
- Koninklijke Philips Electronics, N.V.
- Erwin A Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trenched semiconductor devices and their manufacture
- Publication number 20060008991
- Publication date Jan 12, 2006
- Erwin A. Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Edge termination in MOS transistors
- Publication number 20050156232
- Publication date Jul 21, 2005
- Raymond J.E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trenched semiconductor devices and their manufacture
- Publication number 20030146470
- Publication date Aug 7, 2003
- Koninklijke Philips Electronics N.V.
- Erwin A. Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Edge termination in a trench-gate MOSFET
- Publication number 20030047777
- Publication date Mar 13, 2003
- Koninklijke Philips Electronics N.V.
- Michael A.A. In't Zandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Edge termination in MOS transistors
- Publication number 20030047776
- Publication date Mar 13, 2003
- Raymond J.E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor devices and their manufacture
- Publication number 20030042556
- Publication date Mar 6, 2003
- Koninklijke Philips Electronics N.V.
- Mark A. Gajda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacture of trench-gate semiconductor devices
- Publication number 20020179950
- Publication date Dec 5, 2002
- Koninklijke Philips Electronics N.V.
- Erwin A. Hijzen
- H01 - BASIC ELECTRIC ELEMENTS

Michael IN 'T ZANDT

Person

Patents Grantslast 30 patents

Semiconductor heterojunction device

Electric field gap device and manufacturing method

Electric field gap device and manufacturing method

Electronic device incorporating a randomized interconnection layer...

Electric device with phase change resistor

Semiconductor device and method for manufacture

Dielectric antifuse for electro-thermally programmable device

Trench-gate transistors and their manufacture

Manufacture of trench-gate semiconductor devices

Vertical insulated gate transistor and manufacturing method

Insulated gate power semiconductor devices

Method of maufacturing a trench-gate semiconductor device

Edge termination in MOS transistors

Trenched semiconductor devices and their manufacture

Trenched semiconductor devices and their manufacture

Edge termination in MOS transistors

Edge termination in a trench-gate MOSFET

Semiconductor devices and their manufacture

Manufacture of trench-gate semiconductor devices

Patents Applicationslast 30 patents

ELECTRODE COATING FOR ELECTRON EMISSION DEVICES WITHIN CAVITIES

SEMICONDUCTOR HETEROJUNCTION DEVICE

Semiconductor Device and Associated Method

ELECTRONIC DEVICE INCORPORATING A RANDOMIZED INTERCONNECTION LAYER

ELECTRIC FIELD GAP DEVICE AND MANUFACTURING METHOD

ELECTRIC FIELD GAP DEVICE AND MANUFACTURING METHOD

ELECTRIC DEVICE WITH PHASE CHANGE RESISTOR

Trench-Gate Transistors and Their Manufacture

Dielectric Antifuse for Electro-Thermally Programmable Device

Semiconductor Device and Method for Manufacture

Trench-gate transistors and their manufacture

Manufacture of trench-gate semiconductor devices

Insulated gate power semiconductor devices

Vertical insulated gate transistor and manufacturing method

Method of manufacturing a trench-gate semiconductor device

Trenched semiconductor devices and their manufacture

Edge termination in MOS transistors

Trenched semiconductor devices and their manufacture

Edge termination in a trench-gate MOSFET

Edge termination in MOS transistors

Semiconductor devices and their manufacture

Manufacture of trench-gate semiconductor devices