Michael J. HARGROVE

Person

Clinton Corners, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Junction overlap control in a semiconductor device using a sacrific...
- Patent number 9,530,864
- Issue date Dec 27, 2016
- GLOBALFOUNDRIES Inc.
- Steven J. Bentley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having FinFET semiconductor devices and methods...
- Patent number 9,472,554
- Issue date Oct 18, 2016
- GLOBALFOUNDRIES, INC.
- Michael Hargrove
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxially forming a set of fins in a semiconductor device
- Patent number 9,437,740
- Issue date Sep 6, 2016
- GLOBALFOUNDRIES Inc.
- Johannes M. van Meer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a non-planar ultra-thin body semiconductor devic...
- Patent number 9,373,721
- Issue date Jun 21, 2016
- GLOBALFOUNDRIES Inc.
- Ajey Poovannummoottil Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming source/drain regions for a PMOS transistor devic...
- Patent number 9,343,300
- Issue date May 17, 2016
- GLOBALFOUNDRIES Inc.
- Ajey Poovannummoottil Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of removing fins for finfet semiconductor devices
- Patent number 9,318,342
- Issue date Apr 19, 2016
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming FinFET devices with alternative channel materials
- Patent number 9,312,387
- Issue date Apr 12, 2016
- GLOBALFOUNDRIES Inc.
- Ajey Poovannummoottil Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming gate structures for semiconductor devices using...
- Patent number 9,236,258
- Issue date Jan 12, 2016
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming fins for FinFET semiconductor devices and select...
- Patent number 9,147,730
- Issue date Sep 29, 2015
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FINFET devices having a body contact and methods of forming the same
- Patent number 9,142,674
- Issue date Sep 22, 2015
- GLOBALFOUNDRIES, INC.
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming replacement gate structures with a recessed channel
- Patent number 9,099,492
- Issue date Aug 4, 2015
- GLOBALFOUNDRIES Inc.
- Kuldeep Amarnath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxially forming a set of fins in a semiconductor device
- Patent number 9,034,737
- Issue date May 19, 2015
- GLOBALFOUNDRIES Inc.
- Johannes M. van Meer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal semiconductor alloy contact with low resistance
- Patent number 8,987,078
- Issue date Mar 24, 2015
- International Business Machines Corporation
- Jian Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming bulk FinFET devices with replacement gates so as...
- Patent number 8,809,178
- Issue date Aug 19, 2014
- GLOBALFOUNDRIES Inc.
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with isolation trench liner
- Patent number 8,716,828
- Issue date May 6, 2014
- Advanced Micro Devices, Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal semiconductor alloy contact with low resistance
- Patent number 8,569,810
- Issue date Oct 29, 2013
- International Business Machines Corporation
- Jian Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor device structure with back side source/dra...
- Patent number 8,373,228
- Issue date Feb 12, 2013
- GLOBALFOUNDRIES, INC.
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming FinFET semiconductor devices with different fin...
- Patent number 8,361,894
- Issue date Jan 29, 2013
- GLOBALFOUNDRIES Inc.
- Michael J. Hargrove
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a transistor device having asymmetric embed...
- Patent number 8,293,609
- Issue date Oct 23, 2012
- GLOBALFOUNDRIES, INC.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor device structure with back side gate conta...
- Patent number 8,294,211
- Issue date Oct 23, 2012
- GLOBALFOUNDRIES, INC.
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for protecting gate stacks during fabrication of semiconduc...
- Patent number 8,217,463
- Issue date Jul 10, 2012
- GLOBALFOUNDRIES Inc.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with isolation trench liner
- Patent number 8,217,472
- Issue date Jul 10, 2012
- Advanced Micro Devices, Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having asymmetric embedded strain elements and re...
- Patent number 8,148,750
- Issue date Apr 3, 2012
- GLOBALFOUNDRIES Inc.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating MOS devices having highly stressed channels
- Patent number 8,076,209
- Issue date Dec 13, 2011
- Advanced Micro Devices, Inc.
- Frank Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device
- Patent number 8,048,791
- Issue date Nov 1, 2011
- GLOBALFOUNDRIES Inc.
- Michael Hargrove
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating non-planar semiconductor devices having str...
- Patent number 8,039,349
- Issue date Oct 18, 2011
- GLOBALFOUNDRIES Inc.
- Michael J. Hargrove
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor devices having doped silicon-compromising...
- Patent number 8,026,539
- Issue date Sep 27, 2011
- GLOBALFOUNDRIES Inc.
- Michael Hargrove
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with isolation trench liner, and related fabri...
- Patent number 7,998,832
- Issue date Aug 16, 2011
- Advanced Micro Devices, Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having faceted silicide contacts, and related...
- Patent number 7,994,014
- Issue date Aug 9, 2011
- Advanced Micro Devices, Inc.
- Frank Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structures with stress-inducing source/drain-forming spacers...
- Patent number 7,977,174
- Issue date Jul 12, 2011
- GLOBALFOUNDRIES Inc.
- Scott Luning
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICES WITH REPLACEMENT GATE STRUCTURES
- Publication number 20160093713
- Publication date Mar 31, 2016
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION OVERLAP CONTROL IN A SEMICONDUCTOR DEVICE USING A SACRIFIC...
- Publication number 20150380514
- Publication date Dec 31, 2015
- GLOBALFOUNDRIES INC.
- Steven J. Bentley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF REMOVING FINS FOR FINFET SEMICONDUCTOR DEVICES
- Publication number 20150340238
- Publication date Nov 26, 2015
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING GATE STRUCTURES FOR SEMICONDUCTOR DEVICES USING...
- Publication number 20150311081
- Publication date Oct 29, 2015
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH A REPLACEMENT GATE STRUCTURE HAVING A RE...
- Publication number 20150270346
- Publication date Sep 24, 2015
- GLOBALFOUNDRIES INC.
- Kuldeep Amarnath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A NON-PLANAR ULTRA-THIN BODY DEVICE
- Publication number 20150255555
- Publication date Sep 10, 2015
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING FINS FOR FINFET SEMICONDUCTOR DEVICES AND SELECT...
- Publication number 20150249127
- Publication date Sep 3, 2015
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A NON-PLANAR ULTRA-THIN BODY SEMICONDUCTOR DEVIC...
- Publication number 20150228792
- Publication date Aug 13, 2015
- GLOBALFOUNDRIES INC.
- Ajey Poovannummoottil Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIALLY FORMING A SET OF FINS IN A SEMICONDUCTOR DEVICE
- Publication number 20150221770
- Publication date Aug 6, 2015
- GLOBALFOUNDRIES INC.
- Johannes M. van Meer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING FINFET DEVICES WITH ALTERNATIVE CHANNEL MATERIALS
- Publication number 20150123166
- Publication date May 7, 2015
- GLOBALFOUNDRIES INC.
- Ajey Poovannummoottil Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIALLY FORMING A SET OF FINS IN A SEMICONDUCTOR DEVICE
- Publication number 20150037945
- Publication date Feb 5, 2015
- GLOBALFOUNDRIES INC.
- Johannes M. van Meer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING FINFET SEMICONDUCTOR DEVICES AND METHODS...
- Publication number 20150034941
- Publication date Feb 5, 2015
- GLOBALFOUNDRIES, Inc.
- Michael Hargrove
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES AND METHODS INTEGRATING DIFFERENT FIN DEVICE ARCHITECTURES
- Publication number 20150021709
- Publication date Jan 22, 2015
- GLOBALFOUNDRIES INC.
- Ajey P. JACOB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICES HAVING A BODY CONTACT AND METHODS OF FORMING THE SAME
- Publication number 20140264633
- Publication date Sep 18, 2014
- GLOBALFOUNDRIES, Inc.
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL SEMICONDUCTOR ALLOY CONTACT WITH LOW RESISTANCE
- Publication number 20140017862
- Publication date Jan 16, 2014
- GLOBALFOUNDRIES INC.
- Jian Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING REPLACEMENT GATE STRUCTURES WITH A RECESSED CHANNEL
- Publication number 20130248985
- Publication date Sep 26, 2013
- GLOBALFOUNDRIES INC.
- Kuldeep Amarnath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING BULK FINFET DEVICES WITH REPLACEMENT GATES SO AS...
- Publication number 20130224945
- Publication date Aug 29, 2013
- GLOBALFOUNDRIES INC.
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ISOLATION TRENCH LINER
- Publication number 20120223399
- Publication date Sep 6, 2012
- Advanced Micro Devices, Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL SEMICONDUCTOR ALLOY CONTACT WITH LOW RESISTANCE
- Publication number 20120139015
- Publication date Jun 7, 2012
- GLOBALFOUNDRIES, INC.
- Jian Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A TRANSISTOR DEVICE HAVING ASYMMETRIC EMBED...
- Publication number 20120129311
- Publication date May 24, 2012
- GLOBALFOUNDRIES INC.
- Rohit PAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ISOLATION TRENCH LINER
- Publication number 20110260263
- Publication date Oct 27, 2011
- Advanced Micro Devices, Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETSOI CMOS ARCHITECTURE WITH DUAL BACKSIDE STRESSORS
- Publication number 20110254092
- Publication date Oct 20, 2011
- GLOBALFOUNDRIES INC.
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTOR DEVICE STRUCTURE WITH BACK SIDE SOURCE/DRA...
- Publication number 20110169083
- Publication date Jul 14, 2011
- GLOBALFOUNDRIES INC.
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTOR DEVICE STRUCTURE WITH BACK SIDE GATE CONTA...
- Publication number 20110169084
- Publication date Jul 14, 2011
- GLOBALFOUNDRIES INC.
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE HAVING ASYMMETRIC EMBEDDED STRAIN ELEMENTS AND RE...
- Publication number 20110169073
- Publication date Jul 14, 2011
- GLOBALFOUNDRIES INC.
- Rohit PAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PROTECTING GATE STACKS DURING FABRICATION OF SEMICONDUC...
- Publication number 20110121397
- Publication date May 26, 2011
- GLOBALFOUNDRIES INC.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PROTECTING GATE STACKS DURING FABRICATION OF SEMICONDUC...
- Publication number 20110095341
- Publication date Apr 28, 2011
- GLOBALFOUNDRIES INC.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING NON-PLANAR SEMICONDUCTOR DEVICES HAVING STR...
- Publication number 20110027978
- Publication date Feb 3, 2011
- GLOBALFOUNDRIES INC.
- Michael J. HARGROVE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURES WITH FINS HAVING STRESS-INDUCING CAPS AND METHODS...
- Publication number 20100308409
- Publication date Dec 9, 2010
- GLOBALFOUNDRIES INC.
- Frank S. JOHNSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURES WITH STRESS-INDUCING SOURCE/DRAIN-FORMING SPACERS...
- Publication number 20100308381
- Publication date Dec 9, 2010
- GLOBALFOUNDRIES INC.
- Scott LUNING
- H01 - BASIC ELECTRIC ELEMENTS

Michael J. HARGROVE

Person

Patents Grantslast 30 patents

Junction overlap control in a semiconductor device using a sacrific...

Integrated circuits having FinFET semiconductor devices and methods...

Epitaxially forming a set of fins in a semiconductor device

Methods of forming a non-planar ultra-thin body semiconductor devic...

Methods of forming source/drain regions for a PMOS transistor devic...

Methods of removing fins for finfet semiconductor devices

Methods of forming FinFET devices with alternative channel materials

Methods of forming gate structures for semiconductor devices using...

Methods of forming fins for FinFET semiconductor devices and select...

FINFET devices having a body contact and methods of forming the same

Methods of forming replacement gate structures with a recessed channel

Epitaxially forming a set of fins in a semiconductor device

Metal semiconductor alloy contact with low resistance

Methods of forming bulk FinFET devices with replacement gates so as...

Semiconductor device with isolation trench liner

Metal semiconductor alloy contact with low resistance

Semiconductor transistor device structure with back side source/dra...

Methods of forming FinFET semiconductor devices with different fin...

Method of manufacturing a transistor device having asymmetric embed...

Semiconductor transistor device structure with back side gate conta...

Methods for protecting gate stacks during fabrication of semiconduc...

Semiconductor device with isolation trench liner

Transistor device having asymmetric embedded strain elements and re...

Methods for fabricating MOS devices having highly stressed channels

Method of forming a semiconductor device

Methods for fabricating non-planar semiconductor devices having str...

Metal oxide semiconductor devices having doped silicon-compromising...

Semiconductor device with isolation trench liner, and related fabri...

Semiconductor devices having faceted silicide contacts, and related...

FinFET structures with stress-inducing source/drain-forming spacers...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICES WITH REPLACEMENT GATE STRUCTURES

JUNCTION OVERLAP CONTROL IN A SEMICONDUCTOR DEVICE USING A SACRIFIC...

METHODS OF REMOVING FINS FOR FINFET SEMICONDUCTOR DEVICES

METHODS OF FORMING GATE STRUCTURES FOR SEMICONDUCTOR DEVICES USING...

SEMICONDUCTOR DEVICES WITH A REPLACEMENT GATE STRUCTURE HAVING A RE...

METHODS OF FORMING A NON-PLANAR ULTRA-THIN BODY DEVICE

METHODS OF FORMING FINS FOR FINFET SEMICONDUCTOR DEVICES AND SELECT...

METHODS OF FORMING A NON-PLANAR ULTRA-THIN BODY SEMICONDUCTOR DEVIC...

EPITAXIALLY FORMING A SET OF FINS IN A SEMICONDUCTOR DEVICE

METHODS OF FORMING FINFET DEVICES WITH ALTERNATIVE CHANNEL MATERIALS

EPITAXIALLY FORMING A SET OF FINS IN A SEMICONDUCTOR DEVICE

INTEGRATED CIRCUITS HAVING FINFET SEMICONDUCTOR DEVICES AND METHODS...

STRUCTURES AND METHODS INTEGRATING DIFFERENT FIN DEVICE ARCHITECTURES

FINFET DEVICES HAVING A BODY CONTACT AND METHODS OF FORMING THE SAME

METAL SEMICONDUCTOR ALLOY CONTACT WITH LOW RESISTANCE

METHODS OF FORMING REPLACEMENT GATE STRUCTURES WITH A RECESSED CHANNEL

METHODS OF FORMING BULK FINFET DEVICES WITH REPLACEMENT GATES SO AS...

SEMICONDUCTOR DEVICE WITH ISOLATION TRENCH LINER

METAL SEMICONDUCTOR ALLOY CONTACT WITH LOW RESISTANCE

METHOD OF MANUFACTURING A TRANSISTOR DEVICE HAVING ASYMMETRIC EMBED...

SEMICONDUCTOR DEVICE WITH ISOLATION TRENCH LINER

ETSOI CMOS ARCHITECTURE WITH DUAL BACKSIDE STRESSORS

SEMICONDUCTOR TRANSISTOR DEVICE STRUCTURE WITH BACK SIDE SOURCE/DRA...

SEMICONDUCTOR TRANSISTOR DEVICE STRUCTURE WITH BACK SIDE GATE CONTA...

TRANSISTOR DEVICE HAVING ASYMMETRIC EMBEDDED STRAIN ELEMENTS AND RE...

METHODS FOR PROTECTING GATE STACKS DURING FABRICATION OF SEMICONDUC...

METHODS FOR PROTECTING GATE STACKS DURING FABRICATION OF SEMICONDUC...

METHODS FOR FABRICATING NON-PLANAR SEMICONDUCTOR DEVICES HAVING STR...

FINFET STRUCTURES WITH FINS HAVING STRESS-INDUCING CAPS AND METHODS...

FINFET STRUCTURES WITH STRESS-INDUCING SOURCE/DRAIN-FORMING SPACERS...