Michael John O'Loughlin

Person

Chapel Hill, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Stabilized, high-doped silicon carbide
- Patent number 11,371,163
- Issue date Jun 28, 2022
- Wolfspeed, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Stabilized, high-doped silicon carbide
- Patent number 10,577,720
- Issue date Mar 3, 2020
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Using a carbon vacancy reduction material to increase average carri...
- Patent number 10,541,306
- Issue date Jan 21, 2020
- Cree, Inc.
- Michael John O'Loughlin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using a carbon vacancy reduction material to increase average carri...
- Patent number 10,403,722
- Issue date Sep 3, 2019
- Cree, Inc.
- Michael John O'Loughlin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of carrot defects in silicon carbide epitaxy
- Patent number 9,903,046
- Issue date Feb 27, 2018
- Cree, Inc.
- Michael John O'Loughlin
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC devices with high blocking voltage terminated by a negative bevel
- Patent number 9,349,797
- Issue date May 24, 2016
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride based light emitting diode structures with a quan...
- Patent number 9,112,083
- Issue date Aug 18, 2015
- Cree, Inc.
- David Todd Emerson
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Stable power devices on low-angle off-cut silicon carbide crystals
- Patent number 8,536,582
- Issue date Sep 17, 2013
- Cree, Inc.
- Qingchun Zhang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Deposition systems and susceptor assemblies for depositing a film o...
- Patent number 8,430,960
- Issue date Apr 30, 2013
- Cree, Inc.
- Joseph John Sumakeris
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods of fabricating group III nitride based light emitting diode...
- Patent number 8,227,268
- Issue date Jul 24, 2012
- Cree, Inc.
- David Todd Emerson
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Directed reagents to improve material uniformity
- Patent number 8,052,794
- Issue date Nov 8, 2011
- The United States of America as represented by the Secretary of the Navy
- Joseph John Sumakeris
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group III nitride based superlattice structures
- Patent number 7,312,474
- Issue date Dec 25, 2007
- Cree, Inc.
- David Todd Emerson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of carrot defects in silicon carbide epitaxy
- Patent number 7,230,274
- Issue date Jun 12, 2007
- Cree, Inc.
- Michael John O'Loughlin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for controlling formation of deposits in a deposition syste...
- Patent number 7,118,781
- Issue date Oct 10, 2006
- Cree, Inc.
- Joseph John Sumakeris
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group III nitride based light emitting diode structures with a quan...
- Patent number 6,958,497
- Issue date Oct 25, 2005
- Cree, Inc.
- David Todd Emerson
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STABILIZED, HIGH-DOPED SILICON CARBIDE
- Publication number 20200157705
- Publication date May 21, 2020
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
STABILIZED, HIGH-DOPED SILICON CARBIDE
- Publication number 20180187332
- Publication date Jul 5, 2018
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
USING A CARBON VACANCY REDUCTION MATERIAL TO INCREASE AVERAGE CARRI...
- Publication number 20140070230
- Publication date Mar 13, 2014
- Cree, Inc.
- Michael John O'Loughlin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LARGE HIGH-QUALITY EPITAXIAL WAFERS
- Publication number 20140054609
- Publication date Feb 27, 2014
- Cree, Inc.
- Albert Augustus Burk
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC DEVICES WITH HIGH BLOCKING VOLTAGE TERMINATED BY A NEGATIVE BEVEL
- Publication number 20130026493
- Publication date Jan 31, 2013
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE BASED LIGHT EMITTING DIODE STRUCTURES WITH A QUAN...
- Publication number 20120298955
- Publication date Nov 29, 2012
- Cree, Inc.
- David Todd Emerson
- B82 - NANO-TECHNOLOGY
Information Patent Application
DIRECTED REAGENTS TO IMPROVE MATERIAL UNIFORMITY
- Publication number 20120052660
- Publication date Mar 1, 2012
- Cree, Inc.
- Joseph John SUMAKERIS
- C30 - CRYSTAL GROWTH
Information Patent Application
STABLE POWER DEVICES ON LOW-ANGLE OFF-CUT SILICON CARBIDE CRYSTALS
- Publication number 20100133550
- Publication date Jun 3, 2010
- Qingchun Zhang
- C30 - CRYSTAL GROWTH
Information Patent Application
REDUCTION OF CARROT DEFECTS IN SILICON CARBIDE EPITAXY
- Publication number 20080054412
- Publication date Mar 6, 2008
- Cree, Inc.
- Michael John O'Loughlin
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS OF FABRICATING GROUP III NITRIDE BASED LIGHT EMITTING DIODE...
- Publication number 20080038858
- Publication date Feb 14, 2008
- Cree, Inc.
- David Todd Emerson
- B82 - NANO-TECHNOLOGY
Information Patent Application
REDUCTION OF CARROT DEFECTS IN SILICON CARBIDE EPITAXY
- Publication number 20070108450
- Publication date May 17, 2007
- Michael John O'Loughlin
- C30 - CRYSTAL GROWTH
Information Patent Application
Deposition systems and susceptor assemblies for depositing a film o...
- Publication number 20070101939
- Publication date May 10, 2007
- Cree, Inc.
- Joseph John Sumakeris
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Directed reagents to improve material uniformity
- Publication number 20070065577
- Publication date Mar 22, 2007
- Joseph John Sumakeris
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR CONTROLLING FORMATION OF DEPOSITS IN A DEPOSITION SYSTE...
- Publication number 20060216416
- Publication date Sep 28, 2006
- Joseph John Sumakeris
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Group III nitride based light emitting diode structures with a quan...
- Publication number 20050045895
- Publication date Mar 3, 2005
- David Todd Emerson
- B82 - NANO-TECHNOLOGY
Information Patent Application
Group III nitride based light emitting diode structures with a quan...
- Publication number 20030006418
- Publication date Jan 9, 2003
- David Todd Emerson
- B82 - NANO-TECHNOLOGY

Michael John O'Loughlin

Person

Patents Grantslast 30 patents

Stabilized, high-doped silicon carbide

Stabilized, high-doped silicon carbide

Using a carbon vacancy reduction material to increase average carri...

Using a carbon vacancy reduction material to increase average carri...

Reduction of carrot defects in silicon carbide epitaxy

SiC devices with high blocking voltage terminated by a negative bevel

Group III nitride based light emitting diode structures with a quan...

Stable power devices on low-angle off-cut silicon carbide crystals

Deposition systems and susceptor assemblies for depositing a film o...

Methods of fabricating group III nitride based light emitting diode...

Directed reagents to improve material uniformity

Group III nitride based superlattice structures

Reduction of carrot defects in silicon carbide epitaxy

Methods for controlling formation of deposits in a deposition syste...

Group III nitride based light emitting diode structures with a quan...

Patents Applicationslast 30 patents

STABILIZED, HIGH-DOPED SILICON CARBIDE

STABILIZED, HIGH-DOPED SILICON CARBIDE

USING A CARBON VACANCY REDUCTION MATERIAL TO INCREASE AVERAGE CARRI...

LARGE HIGH-QUALITY EPITAXIAL WAFERS

SIC DEVICES WITH HIGH BLOCKING VOLTAGE TERMINATED BY A NEGATIVE BEVEL

GROUP III NITRIDE BASED LIGHT EMITTING DIODE STRUCTURES WITH A QUAN...

DIRECTED REAGENTS TO IMPROVE MATERIAL UNIFORMITY

STABLE POWER DEVICES ON LOW-ANGLE OFF-CUT SILICON CARBIDE CRYSTALS

REDUCTION OF CARROT DEFECTS IN SILICON CARBIDE EPITAXY

METHODS OF FABRICATING GROUP III NITRIDE BASED LIGHT EMITTING DIODE...

REDUCTION OF CARROT DEFECTS IN SILICON CARBIDE EPITAXY

Deposition systems and susceptor assemblies for depositing a film o...

Directed reagents to improve material uniformity

METHODS FOR CONTROLLING FORMATION OF DEPOSITS IN A DEPOSITION SYSTE...

Group III nitride based light emitting diode structures with a quan...

Group III nitride based light emitting diode structures with a quan...