Michael R. Poponiak

Person

Newburgh, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming aluminum oxide dielectric isolation in integrate...
- Patent number 4,542,579
- Issue date Sep 24, 1985
- International Business Machines Corporation
- Michael R. Poponiak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimum reduced pressure epitaxial growth process to prevent autodo...
- Patent number 4,504,330
- Issue date Mar 12, 1985
- International Business Machines Corporation
- Arun K. Gaind
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating a self-aligned micrometer bipolar transisto...
- Patent number 4,333,227
- Issue date Jun 8, 1982
- International Business Machines Corporation
- Cheng T. Horng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned micrometer bipolar transistor device and process
- Patent number 4,303,933
- Issue date Dec 1, 1981
- International Business Machines Corporation
- Cheng T. Horng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anodic etching method for the detection of electrically active defe...
- Patent number 4,180,439
- Issue date Dec 25, 1979
- International Business Machines Corporation
- John L. Deines
- G01 - MEASURING TESTING
Information Patent Grant
Method for manufacture of a moisture sensor
- Patent number 4,144,636
- Issue date Mar 20, 1979
- International Business Machines Corporation
- Paul J. Burkhardt
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor fabrication method for improved device yield by minim...
- Patent number 4,069,068
- Issue date Jan 17, 1978
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Porous silicon dioxide moisture sensor and method for manufacture o...
- Patent number 4,057,823
- Issue date Nov 8, 1977
- International Business Machines Corporation
- Paul Johannes Burkhardt
- G01 - MEASURING TESTING
Information Patent Grant
Process for forming monocrystalline silicon carbide on silicon subs...
- Patent number 4,028,149
- Issue date Jun 7, 1977
- IBM Corporation
- John L. Deines
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of proton-enhanced diffusion for simultaneously forming inte...
- Patent number 3,982,967
- Issue date Sep 28, 1976
- IBM Corporation
- San-Mei Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming apertures in silicon bodies
- Patent number 3,962,052
- Issue date Jun 8, 1976
- International Business Machines Corporation
- Shakir A. Abbas
- B81 - MICRO-STRUCTURAL TECHNOLOGY

Michael R. Poponiak

Person

Patents Grantslast 30 patents

Method for forming aluminum oxide dielectric isolation in integrate...

Optimum reduced pressure epitaxial growth process to prevent autodo...

Process for fabricating a self-aligned micrometer bipolar transisto...

Self-aligned micrometer bipolar transistor device and process

Anodic etching method for the detection of electrically active defe...

Method for manufacture of a moisture sensor

Semiconductor fabrication method for improved device yield by minim...

Porous silicon dioxide moisture sensor and method for manufacture o...

Process for forming monocrystalline silicon carbide on silicon subs...

Method of proton-enhanced diffusion for simultaneously forming inte...

Process for forming apertures in silicon bodies