Michael R. Seacrist

Person

Ballwin, MO, US

People

Patents Grantslast 30 patents

Information Patent Grant
Radio frequency silicon on insulator structure with superior perfor...
- Patent number 11,942,360
- Issue date Mar 26, 2024
- GlobalWafers Co., Ltd.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency silicon on insulator wafer platform with superior p...
- Patent number 11,887,885
- Issue date Jan 30, 2024
- GlobalWafers Co., Ltd.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency silicon on insulator structure with superior perfor...
- Patent number 11,626,318
- Issue date Apr 11, 2023
- GlobalWafers Co., Ltd.
- Michael R. Seacrist
- C30 - CRYSTAL GROWTH
Information Patent Grant
Radio frequency silicon on insulator wafer platform with superior p...
- Patent number 11,532,501
- Issue date Dec 20, 2022
- GlobalWafers Co., Ltd.
- Michael R. Seacrist
- C30 - CRYSTAL GROWTH
Information Patent Grant
Direct formation of hexagonal boron nitride on silicon based dielec...
- Patent number 11,276,759
- Issue date Mar 15, 2022
- GlobalWafers Co., Ltd.
- Vikas Berry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency silicon on insulator structure with superior perfor...
- Patent number 11,075,109
- Issue date Jul 27, 2021
- GlobalWafers Co., Ltd.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency silicon on insulator wafer platform with superior p...
- Patent number 10,943,813
- Issue date Mar 9, 2021
- GlobalWafers Co., Ltd.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of group IIIA-nitride layers on semiconductor on insula...
- Patent number 10,796,905
- Issue date Oct 6, 2020
- GlobalWafers Co., Ltd.
- Gang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Direct formation of hexagonal boron nitride on silicon based dielec...
- Patent number 10,658,472
- Issue date May 19, 2020
- GlobalWafers Co., Ltd.
- Vikas Berry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth of defect-free, wafer-scale single-layer graphene...
- Patent number 10,573,517
- Issue date Feb 25, 2020
- GlobalWafers Co., Ltd.
- Vikas Berry
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Manufacture of Group IIIA-nitride layers on semiconductor on insula...
- Patent number 10,262,855
- Issue date Apr 16, 2019
- GlobalWafers Co., Ltd.
- Gang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Direct and sequential formation of monolayers of boron nitride and...
- Patent number 9,355,842
- Issue date May 31, 2016
- Sunedison Semiconductor Limited (UEN201334164H)
- Michael R. Seacrist
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Direct formation of graphene on semiconductor substrates
- Patent number 9,343,533
- Issue date May 17, 2016
- SunEdison Semiconductor Limited (UEN201334164H)
- Michael R. Seacrist
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Bulk silicon wafer product useful in the manufacture of three dimen...
- Patent number 9,029,854
- Issue date May 12, 2015
- Sunedison Semiconductor Limited (UEN201334164H)
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Direct and sequential formation of monolayers of boron nitride and...
- Patent number 9,029,228
- Issue date May 12, 2015
- SunEdision Semiconductor Limited (UEN201334164H)
- Michael R. Seacrist
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Direct formation of graphene on semiconductor substrates
- Patent number 8,884,310
- Issue date Nov 11, 2014
- SunEdison Semiconductor Limited (UEN201334164H)
- Michael R. Seacrist
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods for preparing a semiconductor wafer with high thermal condu...
- Patent number 8,865,601
- Issue date Oct 21, 2014
- SunEdison Semiconductor Limited (UEN201334164H)
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for preparing a semiconductor structure for use in backside...
- Patent number 8,080,482
- Issue date Dec 20, 2011
- MEMC Electronic Materials, Inc.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon structures with improved resistance to radiation events
- Patent number 7,566,951
- Issue date Jul 28, 2009
- MEMC Electronic Materials, Inc.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RADIO FREQUENCY SILICON ON INSULATOR STRUCTURE WITH SUPERIOR PERFOR...
- Publication number 20230215759
- Publication date Jul 6, 2023
- GLOBALWAFERS CO., LTD.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODELING THERMAL DONOR FORMATION AND TARGET RESISTIVITY FOR SINGLE...
- Publication number 20230112094
- Publication date Apr 13, 2023
- GLOBALWAFERS CO., LTD.
- Carissima Marie Hudson
- C30 - CRYSTAL GROWTH
Information Patent Application
RADIO FREQUENCY SILICON ON INSULATOR WAFER PLATFORM WITH SUPERIOR P...
- Publication number 20230062816
- Publication date Mar 2, 2023
- GLOBALWAFERS CO., LTD.
- Michael R. Seacrist
- C30 - CRYSTAL GROWTH
Information Patent Application
RADIO FREQUENCY SILICON ON INSULATOR STRUCTURE WITH SUPERIOR PERFOR...
- Publication number 20210242075
- Publication date Aug 5, 2021
- GLOBALWAFERS CO., LTD.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY SILICON ON INSULATOR WAFER PLATFORM WITH SUPERIOR P...
- Publication number 20210159114
- Publication date May 27, 2021
- GLOBALWAFERS CO., LTD.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECT FORMATION OF HEXAGONAL BORON NITRIDE ON SILICON BASED DIELEC...
- Publication number 20200152745
- Publication date May 14, 2020
- GLOBALWAFERS CO., LTD.
- Vikas Berry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECT FORMATION OF HEXAGONAL BORON NITRIDE ON SILICON BASED DIELEC...
- Publication number 20200152744
- Publication date May 14, 2020
- GLOBALWAFERS CO., LTD.
- Vikas Berry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY SILICON ON INSULATOR STRUCTURE WITH SUPERIOR PERFOR...
- Publication number 20200020571
- Publication date Jan 16, 2020
- GLOBALWAFERS CO., LTD.
- Michael R. Seacrist
- C30 - CRYSTAL GROWTH
Information Patent Application
RADIO FREQUENCY SILICON ON INSULATOR WAFER PLATFORM WITH SUPERIOR P...
- Publication number 20200020766
- Publication date Jan 16, 2020
- GLOBALWAFERS CO., LTD.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURE OF GROUP IIIA-NITRIDE LAYERS ON SEMICONDUCTOR ON INSULA...
- Publication number 20190206675
- Publication date Jul 4, 2019
- GLOBALWAFERS CO., LTD.
- Gang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL GROWTH OF DEFECT-FREE, WAFER-SCALE SINGLE-LAYER GRAPHENE...
- Publication number 20190139762
- Publication date May 9, 2019
- GlobalWafers Co., Ltd
- Vikas Berry
- C30 - CRYSTAL GROWTH
Information Patent Application
DIRECT FORMATION OF HEXAGONAL BORON NITRIDE ON SILICON BASED DIELEC...
- Publication number 20190097000
- Publication date Mar 28, 2019
- GLOBALWAFERS CO., LTD.
- Vikas Berry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL GROWTH OF DEFECT-FREE, WAFER-SCALE SINGLE-LAYER GRAPHENE...
- Publication number 20180315599
- Publication date Nov 1, 2018
- THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
- Vikas Berry
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURE OF GROUP IIIA-NITRIDE LAYERS ON SEMICONDUCTOR ON INSULA...
- Publication number 20180005815
- Publication date Jan 4, 2018
- SunEdison Semiconductor Limited
- Gang Wang
- C30 - CRYSTAL GROWTH
Information Patent Application
DIRECT FORMATION OF GRAPHENE ON SEMICONDUCTOR SUBSTRATES AND STRUCT...
- Publication number 20160233305
- Publication date Aug 11, 2016
- SunEdison Semiconductor Limited (UEN201334164H)
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECT AND SEQUENTIAL FORMATION OF MONOLAYERS OF BORON NITRIDE AND...
- Publication number 20150144881
- Publication date May 28, 2015
- SunEdison Semiconductor Limited (UEN201334164H)
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECT FORMATION OF GRAPHENE ON SEMICONDUCTOR SUBSTRATES
- Publication number 20150021554
- Publication date Jan 22, 2015
- SunEdison Semiconductor Limited (UEN201334164H)
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECT AND SEQUENTIAL FORMATION OF MONOLAYERS OF BORON NITRIDE AND...
- Publication number 20130240830
- Publication date Sep 19, 2013
- Michael R. Seacrist
- B82 - NANO-TECHNOLOGY
Information Patent Application
Direct Formation of Graphene on Semiconductor Substrates
- Publication number 20130099195
- Publication date Apr 25, 2013
- Kansas State University Research Foundation
- Michael R. Seacrist
- B82 - NANO-TECHNOLOGY
Information Patent Application
Methods for preparing a semiconductor wafer with high thermal condu...
- Publication number 20110318912
- Publication date Dec 29, 2011
- MEMC Electronic Materials, Inc.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK SILICON WAFER PRODUCT USEFUL IN THE MANUFACTURE OF THREE DIMEN...
- Publication number 20110163313
- Publication date Jul 7, 2011
- MEMC Electronic Materials, Inc.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for preparing a semiconductor wafer with high thermal condu...
- Publication number 20090233428
- Publication date Sep 17, 2009
- MEMC Electronic Materials, Inc.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon structures with improved resistance to radiation events
- Publication number 20070249136
- Publication date Oct 25, 2007
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor wafer with high thermal conductivity
- Publication number 20070176238
- Publication date Aug 2, 2007
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SILICON ON INSULATOR (SSOI) WITH LAYER TRANSFER FROM OXIDI...
- Publication number 20070117350
- Publication date May 24, 2007
- MEMC Electronic Materials, Inc.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SILICON ON INSULATOR (SSOI) STRUCTURE WITH IMPROVED CRYSTA...
- Publication number 20070042566
- Publication date Feb 22, 2007
- MEMC Electronic Materials, Inc.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Internally gettered heteroepitaxial semiconductor wafers and method...
- Publication number 20060138601
- Publication date Jun 29, 2006
- MEMC Electronic Materials, Inc.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS

Michael R. Seacrist

Person

Patents Grantslast 30 patents

Radio frequency silicon on insulator structure with superior perfor...

Radio frequency silicon on insulator wafer platform with superior p...

Radio frequency silicon on insulator structure with superior perfor...

Radio frequency silicon on insulator wafer platform with superior p...

Direct formation of hexagonal boron nitride on silicon based dielec...

Radio frequency silicon on insulator structure with superior perfor...

Radio frequency silicon on insulator wafer platform with superior p...

Manufacture of group IIIA-nitride layers on semiconductor on insula...

Direct formation of hexagonal boron nitride on silicon based dielec...

Epitaxial growth of defect-free, wafer-scale single-layer graphene...

Manufacture of Group IIIA-nitride layers on semiconductor on insula...

Direct and sequential formation of monolayers of boron nitride and...

Direct formation of graphene on semiconductor substrates

Bulk silicon wafer product useful in the manufacture of three dimen...

Direct and sequential formation of monolayers of boron nitride and...

Direct formation of graphene on semiconductor substrates

Methods for preparing a semiconductor wafer with high thermal condu...

Methods for preparing a semiconductor structure for use in backside...

Silicon structures with improved resistance to radiation events

Patents Applicationslast 30 patents

RADIO FREQUENCY SILICON ON INSULATOR STRUCTURE WITH SUPERIOR PERFOR...

MODELING THERMAL DONOR FORMATION AND TARGET RESISTIVITY FOR SINGLE...

RADIO FREQUENCY SILICON ON INSULATOR WAFER PLATFORM WITH SUPERIOR P...

RADIO FREQUENCY SILICON ON INSULATOR STRUCTURE WITH SUPERIOR PERFOR...

RADIO FREQUENCY SILICON ON INSULATOR WAFER PLATFORM WITH SUPERIOR P...

DIRECT FORMATION OF HEXAGONAL BORON NITRIDE ON SILICON BASED DIELEC...

DIRECT FORMATION OF HEXAGONAL BORON NITRIDE ON SILICON BASED DIELEC...

RADIO FREQUENCY SILICON ON INSULATOR STRUCTURE WITH SUPERIOR PERFOR...

RADIO FREQUENCY SILICON ON INSULATOR WAFER PLATFORM WITH SUPERIOR P...

MANUFACTURE OF GROUP IIIA-NITRIDE LAYERS ON SEMICONDUCTOR ON INSULA...

EPITAXIAL GROWTH OF DEFECT-FREE, WAFER-SCALE SINGLE-LAYER GRAPHENE...

DIRECT FORMATION OF HEXAGONAL BORON NITRIDE ON SILICON BASED DIELEC...

EPITAXIAL GROWTH OF DEFECT-FREE, WAFER-SCALE SINGLE-LAYER GRAPHENE...

MANUFACTURE OF GROUP IIIA-NITRIDE LAYERS ON SEMICONDUCTOR ON INSULA...

DIRECT FORMATION OF GRAPHENE ON SEMICONDUCTOR SUBSTRATES AND STRUCT...

DIRECT AND SEQUENTIAL FORMATION OF MONOLAYERS OF BORON NITRIDE AND...

DIRECT FORMATION OF GRAPHENE ON SEMICONDUCTOR SUBSTRATES

DIRECT AND SEQUENTIAL FORMATION OF MONOLAYERS OF BORON NITRIDE AND...

Direct Formation of Graphene on Semiconductor Substrates

Methods for preparing a semiconductor wafer with high thermal condu...

BULK SILICON WAFER PRODUCT USEFUL IN THE MANUFACTURE OF THREE DIMEN...

Methods for preparing a semiconductor wafer with high thermal condu...

Silicon structures with improved resistance to radiation events

Semiconductor wafer with high thermal conductivity

STRAINED SILICON ON INSULATOR (SSOI) WITH LAYER TRANSFER FROM OXIDI...

STRAINED SILICON ON INSULATOR (SSOI) STRUCTURE WITH IMPROVED CRYSTA...

Internally gettered heteroepitaxial semiconductor wafers and method...