Michael S. BEUMER

Person

Portland, OR, US

People

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE HIGH
- Publication number 20240213140
- Publication date Jun 27, 2024
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) DEVICES WITH THROUGH-SILICON VIAS
- Publication number 20240213118
- Publication date Jun 27, 2024
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR...
- Publication number 20240204091
- Publication date Jun 20, 2024
- Intel Corporation
- Heli Vora
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) WITH INTERLAYERS FOR INTEGRATED CIRCUIT TECHN...
- Publication number 20240204059
- Publication date Jun 20, 2024
- Intel Corporation
- Pratik KOIRALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) TRANSISTORS WITH LATERAL DRAIN DEPLETION
- Publication number 20240021725
- Publication date Jan 18, 2024
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES TO ENABLE LOWER SUBTHRESHOLD SLOPE IN GALLIUM NITRI...
- Publication number 20230197840
- Publication date Jun 22, 2023
- Intel Corporation
- Sanyam Bajaj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRE-FLOW OF P-TYPE DOPANT PRECURSOR TO ENABLE THINNER P-GAN LAYERS...
- Publication number 20230132548
- Publication date May 4, 2023
- Intel Corporation
- Atsunori Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
pGaN ENHANCEMENT MODE HEMTs WITH DOPANT DIFFUSION SPACER
- Publication number 20220199816
- Publication date Jun 23, 2022
- Intel Corporation
- Michael Beumer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN BASED HEMT DEVICE RELAXED BUFFER STRUCTURE ON SILICON
- Publication number 20200194577
- Publication date Jun 18, 2020
- Intel Corporation
- Glenn GLASS
- H01 - BASIC ELECTRIC ELEMENTS

Michael S. BEUMER

Person

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE HIGH

GALLIUM NITRIDE (GAN) DEVICES WITH THROUGH-SILICON VIAS

LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR...

GALLIUM NITRIDE (GAN) WITH INTERLAYERS FOR INTEGRATED CIRCUIT TECHN...

GALLIUM NITRIDE (GAN) TRANSISTORS WITH LATERAL DRAIN DEPLETION

GATE STRUCTURES TO ENABLE LOWER SUBTHRESHOLD SLOPE IN GALLIUM NITRI...

PRE-FLOW OF P-TYPE DOPANT PRECURSOR TO ENABLE THINNER P-GAN LAYERS...

pGaN ENHANCEMENT MODE HEMTs WITH DOPANT DIFFUSION SPACER

GAN BASED HEMT DEVICE RELAXED BUFFER STRUCTURE ON SILICON