Michel J. ABOU-KHALIL

Person

Essex Junction, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Efuse inside and gate structure on triple-well region
- Patent number 11,848,324
- Issue date Dec 19, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Ephrem G. Gebreselasie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with a body pedestal
- Patent number 11,764,060
- Issue date Sep 19, 2023
- GLOBALFOUNDRIES U.S. INC.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked field effect transistors
- Patent number 11,728,348
- Issue date Aug 15, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures with a substrate biasing scheme
- Patent number 11,658,177
- Issue date May 23, 2023
- GLOBALFOUNDRIES U.S. INC.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with a polycrystalline body in a shallow t...
- Patent number 11,437,522
- Issue date Sep 6, 2022
- GLOBALFOUNDRIES U.S. INC.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit (IC) structure with high impedance semiconductor...
- Patent number 11,411,087
- Issue date Aug 9, 2022
- GLOBALFOUNDRIES U.S. INC.
- John J. Ellis-Monaghan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried damage layers for electrical isolation
- Patent number 11,322,357
- Issue date May 3, 2022
- GLOBALFOUNDRIES U.S. INC.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures including stacked depleted and high resist...
- Patent number 11,315,825
- Issue date Apr 26, 2022
- GLOBALFOUNDRIES U.S. INC.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with sectioned extension regions
- Patent number 11,205,701
- Issue date Dec 21, 2021
- GLOBALFOUNDRIES U.S. INC.
- Henry Aldridge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked field effect transistors
- Patent number 11,183,514
- Issue date Nov 23, 2021
- GLOBALFOUNDRIES U.S. INC.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-depth regions of high resistivity in a semiconductor substrate
- Patent number 11,158,535
- Issue date Oct 26, 2021
- GLOBALFOUNDRIES U.S. INC.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with laterally-serpentine gates
- Patent number 10,818,763
- Issue date Oct 27, 2020
- GLOBALFOUNDRIES Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures, methods and applications for electrical pulse anneal pr...
- Patent number 10,755,949
- Issue date Aug 25, 2020
- ELPIS TECHNOLOGIES INC.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local trap-rich isolation
- Patent number 10,446,435
- Issue date Oct 15, 2019
- GLOBALFOUNDRIES Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures, methods and applications for electrical pulse anneal pr...
- Patent number 10,283,374
- Issue date May 7, 2019
- International Business Machines Corporation
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon controlled rectifiers (SCR), methods of manufacture and des...
- Patent number 10,163,892
- Issue date Dec 25, 2018
- GLOBALFOUNDRIES Inc.
- Michel J. Abou-Khalil
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Wafers and device structures with body contacts
- Patent number 10,062,711
- Issue date Aug 28, 2018
- GLOBALFOUNDRIES Inc.
- Steven Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures, methods and applications for electrical pulse anneal pr...
- Patent number 10,037,895
- Issue date Jul 31, 2018
- International Business Machines Corporation
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local trap-rich isolation
- Patent number 9,991,155
- Issue date Jun 5, 2018
- GLOBALFOUNDRIES, INC.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI-MOSFET gate insulation layer with different thickness
- Patent number 9,978,849
- Issue date May 22, 2018
- GLOBALFOUNDRIES Inc.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures, methods and applications for electrical pulse anneal pr...
- Patent number 9,881,810
- Issue date Jan 30, 2018
- International Business Machines Corporation
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded polysilicon resistors with crystallization barriers
- Patent number 9,716,136
- Issue date Jul 25, 2017
- GLOBALFOUNDRIES Inc.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral extended drain metal oxide semiconductor field effect trans...
- Patent number 9,245,960
- Issue date Jan 26, 2016
- GLOBALFOUNDRIES Inc.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin body switch transistor
- Patent number 9,214,561
- Issue date Dec 15, 2015
- GLOBALFOUNDRIES Inc.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through silicon via repair
- Patent number 9,070,629
- Issue date Jun 30, 2015
- International Business Machines Corporation
- Michel J. Abou-Khalil
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor-on-insulator device with asymmetric structure
- Patent number 8,912,625
- Issue date Dec 16, 2014
- International Business Machines Corporation
- Michel J. Abou-Khalil
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Silicon controlled rectifiers (SCR), methods of manufacture and des...
- Patent number 8,906,751
- Issue date Dec 9, 2014
- International Business Machines Corporation
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral extended drain metal oxide semiconductor field effect trans...
- Patent number 8,901,676
- Issue date Dec 2, 2014
- International Business Machines Corporation
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RC-triggered semiconductor controlled rectifier for ESD protection...
- Patent number 8,891,212
- Issue date Nov 18, 2014
- International Business Machines Corporation
- Michel J. Abou-Khalil
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Metal-insulator-metal capacitors with high capacitance density
- Patent number 8,847,354
- Issue date Sep 30, 2014
- International Business Machines Corporation
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES ISOLATED BY POROUS SEMICONDUCTOR MA...
- Publication number 20240088157
- Publication date Mar 14, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Michel Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTORS
- Publication number 20240088242
- Publication date Mar 14, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. KANTAROVSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-MOBILITY-ELECTRON TRANSISTORS HAVING HEAT DISSIPATING STRUCTURES
- Publication number 20230420326
- Publication date Dec 28, 2023
- GLOBALFOUNDRIES U.S. Inc.
- ZHONG-XIANG HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS HAVING A GATE ELECTRODE POSITIONED INSIDE...
- Publication number 20230317776
- Publication date Oct 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Michel Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH DUAL ISOLATION STRUCTURE
- Publication number 20230117591
- Publication date Apr 20, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Richard J. RASSEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EFUSE INSIDE AND GATE STRUCTURE ON TRIPLE-WELL REGION
- Publication number 20230088425
- Publication date Mar 23, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Ephrem G. Gebreselasie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT (IC) STRUCTURE WITH HIGH IMPEDANCE SEMICONDUCTOR...
- Publication number 20220181452
- Publication date Jun 9, 2022
- GLOBALFOUNDRIES U.S. Inc.
- John J. Ellis-Monaghan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES WITH A SUBSTRATE BIASING SCHEME
- Publication number 20220181317
- Publication date Jun 9, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY STACKED FIELD EFFECT TRANSISTORS
- Publication number 20220028992
- Publication date Jan 27, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. STAMPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH SECTIONED EXTENSION REGIONS
- Publication number 20210391425
- Publication date Dec 16, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Henry Aldridge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH A POLYCRYSTALLINE BODY IN A SHALLOW T...
- Publication number 20210376159
- Publication date Dec 2, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED DAMAGE LAYERS FOR ELECTRICAL ISOLATION
- Publication number 20210272812
- Publication date Sep 2, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-DEPTH REGIONS OF HIGH RESISTIVITY IN A SEMICONDUCTOR SUBSTRATE
- Publication number 20210111063
- Publication date Apr 15, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY STACKED FIELD EFFECT TRANSISTORS
- Publication number 20210074730
- Publication date Mar 11, 2021
- GLOBALFOUNDRIES INC.
- Anthony K. STAMPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES INCLUDING STACKED DEPLETED AND HIGH RESIST...
- Publication number 20210066118
- Publication date Mar 4, 2021
- GLOBALFOUNDRIES INC.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH LATERALLY-SERPENTINE GATES
- Publication number 20200357889
- Publication date Nov 12, 2020
- GLOBALFOUNDRIES INC.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES, METHODS AND APPLICATIONS FOR ELECTRICAL PULSE ANNEAL PR...
- Publication number 20190198347
- Publication date Jun 27, 2019
- International Business Machines Corporation
- Michel J. ABOU-KHALIL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH A BODY PEDESTAL
- Publication number 20180323066
- Publication date Nov 8, 2018
- GLOBALFOUNDRIES INC.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES, METHODS AND APPLICATIONS FOR ELECTRICAL PULSE ANNEAL PR...
- Publication number 20180308708
- Publication date Oct 25, 2018
- International Business Machines Corporation
- Michel J. ABOU-KHALIL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL TRAP-RICH ISOLATION
- Publication number 20180233401
- Publication date Aug 16, 2018
- GLOBALFOUNDRIES, Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR USING SELECTIVE UNDERCUT AT GATE CONDUCTOR AND GATE INSU...
- Publication number 20180204926
- Publication date Jul 19, 2018
- GLOBALFOUNDRIES INC.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFERS AND DEVICE STRUCTURES WITH BODY CONTACTS
- Publication number 20180175064
- Publication date Jun 21, 2018
- GLOBALFOUNDRIES INC.
- Steven Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL TRAP-RICH ISOLATION
- Publication number 20180096884
- Publication date Apr 5, 2018
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR USING SELECTIVE UNDERCUT AT GATE CONDUCTOR AND GATE INSU...
- Publication number 20170186845
- Publication date Jun 29, 2017
- GLOBALFOUNDRIES INC.
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES, METHODS AND APPLICATIONS FOR ELECTRICAL PULSE ANNEAL PR...
- Publication number 20160035717
- Publication date Feb 4, 2016
- International Business Machines Corporation
- Michel J. ABOU-KHALIL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES, METHODS AND APPLICATIONS FOR ELECTRICAL PULSE ANNEAL PR...
- Publication number 20160035716
- Publication date Feb 4, 2016
- International Business Machines Corporation
- Michel J. ABOU-KHALIL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CONTROLLED RECTIFIERS (SCR), METHODS OF MANUFACTURE AND DES...
- Publication number 20150048416
- Publication date Feb 19, 2015
- International Business Machines Corporation
- Michel J. ABOU-KHALIL
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
THIN BODY SWITCH TRANSISTOR
- Publication number 20150001622
- Publication date Jan 1, 2015
- International Business Machines Corporation
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL EXTENDED DRAIN METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANS...
- Publication number 20140225186
- Publication date Aug 14, 2014
- International Business Machines Corporation
- Michel J. Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES, METHODS AND APPLICATIONS FOR ELECTRICAL PULSE ANNEAL PR...
- Publication number 20140124903
- Publication date May 8, 2014
- International Business Machines Corporation
- Michel J. ABOU-KHALIL
- H01 - BASIC ELECTRIC ELEMENTS

Michel J. ABOU-KHALIL

Person

Patents Grantslast 30 patents

Efuse inside and gate structure on triple-well region

Field-effect transistors with a body pedestal

Vertically stacked field effect transistors

Semiconductor device structures with a substrate biasing scheme

Field-effect transistors with a polycrystalline body in a shallow t...

Integrated circuit (IC) structure with high impedance semiconductor...

Buried damage layers for electrical isolation

Semiconductor structures including stacked depleted and high resist...

Transistors with sectioned extension regions

Vertically stacked field effect transistors

Multi-depth regions of high resistivity in a semiconductor substrate

Field-effect transistors with laterally-serpentine gates

Structures, methods and applications for electrical pulse anneal pr...

Local trap-rich isolation

Structures, methods and applications for electrical pulse anneal pr...

Silicon controlled rectifiers (SCR), methods of manufacture and des...

Wafers and device structures with body contacts

Structures, methods and applications for electrical pulse anneal pr...

Local trap-rich isolation

SOI-MOSFET gate insulation layer with different thickness

Structures, methods and applications for electrical pulse anneal pr...

Embedded polysilicon resistors with crystallization barriers

Lateral extended drain metal oxide semiconductor field effect trans...

Thin body switch transistor

Through silicon via repair

Semiconductor-on-insulator device with asymmetric structure

Silicon controlled rectifiers (SCR), methods of manufacture and des...

Lateral extended drain metal oxide semiconductor field effect trans...

RC-triggered semiconductor controlled rectifier for ESD protection...

Metal-insulator-metal capacitors with high capacitance density

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE STRUCTURES ISOLATED BY POROUS SEMICONDUCTOR MA...

HIGH ELECTRON MOBILITY TRANSISTORS

HIGH-MOBILITY-ELECTRON TRANSISTORS HAVING HEAT DISSIPATING STRUCTURES

FIELD-EFFECT TRANSISTORS HAVING A GATE ELECTRODE POSITIONED INSIDE...

DEVICE WITH DUAL ISOLATION STRUCTURE

EFUSE INSIDE AND GATE STRUCTURE ON TRIPLE-WELL REGION

INTEGRATED CIRCUIT (IC) STRUCTURE WITH HIGH IMPEDANCE SEMICONDUCTOR...

SEMICONDUCTOR DEVICE STRUCTURES WITH A SUBSTRATE BIASING SCHEME

VERTICALLY STACKED FIELD EFFECT TRANSISTORS

TRANSISTORS WITH SECTIONED EXTENSION REGIONS

FIELD-EFFECT TRANSISTORS WITH A POLYCRYSTALLINE BODY IN A SHALLOW T...

BURIED DAMAGE LAYERS FOR ELECTRICAL ISOLATION

MULTI-DEPTH REGIONS OF HIGH RESISTIVITY IN A SEMICONDUCTOR SUBSTRATE

VERTICALLY STACKED FIELD EFFECT TRANSISTORS

SEMICONDUCTOR STRUCTURES INCLUDING STACKED DEPLETED AND HIGH RESIST...

FIELD-EFFECT TRANSISTORS WITH LATERALLY-SERPENTINE GATES

STRUCTURES, METHODS AND APPLICATIONS FOR ELECTRICAL PULSE ANNEAL PR...

FIELD-EFFECT TRANSISTORS WITH A BODY PEDESTAL

STRUCTURES, METHODS AND APPLICATIONS FOR ELECTRICAL PULSE ANNEAL PR...

LOCAL TRAP-RICH ISOLATION

TRANSISTOR USING SELECTIVE UNDERCUT AT GATE CONDUCTOR AND GATE INSU...

WAFERS AND DEVICE STRUCTURES WITH BODY CONTACTS

LOCAL TRAP-RICH ISOLATION

TRANSISTOR USING SELECTIVE UNDERCUT AT GATE CONDUCTOR AND GATE INSU...

STRUCTURES, METHODS AND APPLICATIONS FOR ELECTRICAL PULSE ANNEAL PR...

STRUCTURES, METHODS AND APPLICATIONS FOR ELECTRICAL PULSE ANNEAL PR...

SILICON CONTROLLED RECTIFIERS (SCR), METHODS OF MANUFACTURE AND DES...

THIN BODY SWITCH TRANSISTOR

LATERAL EXTENDED DRAIN METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANS...

STRUCTURES, METHODS AND APPLICATIONS FOR ELECTRICAL PULSE ANNEAL PR...