Michelle Leigh Steen

Person

Danbury, CT, US

People

Patents Grantslast 30 patents

Information Patent Grant
High performance CMOS circuits, and methods for fabricating same
- Patent number 8,383,483
- Issue date Feb 26, 2013
- International Business Machines Corporation
- John C. Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for the formation of fully silicided metal gates
- Patent number 8,178,433
- Issue date May 15, 2012
- International Business Machines Corporation
- Glenn A. Biery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for creating reliable deep via connections in...
- Patent number 8,080,876
- Issue date Dec 20, 2011
- International Business Machines Corporation
- Paul S. Andry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS transistors with differential oxygen content high-K dielectrics
- Patent number 8,035,173
- Issue date Oct 11, 2011
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric spacer removal
- Patent number 7,919,379
- Issue date Apr 5, 2011
- International Business Machines Corporation
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate self-aligned integration
- Patent number 7,872,317
- Issue date Jan 18, 2011
- International Business Machines Corporation
- Alessandro C. Callegari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor structure including one devic...
- Patent number 7,833,849
- Issue date Nov 16, 2010
- International Business Machines Corporation
- Alessandro C. Callegari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of fully silicided metal gate using dual self-aligned sil...
- Patent number 7,785,999
- Issue date Aug 31, 2010
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for the formation of fully silicided metal gates
- Patent number 7,705,405
- Issue date Apr 27, 2010
- International Business Machines Corporation
- Glenn A. Biery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS transistors with differential oxygen content high-k dielectrics
- Patent number 7,696,036
- Issue date Apr 13, 2010
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate self-aligned integration
- Patent number 7,569,466
- Issue date Aug 4, 2009
- International Business Machines Corporation
- Alessandro C. Callegari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-bit phase change memory cell and multi-bit phase change memor...
- Patent number 7,485,891
- Issue date Feb 3, 2009
- International Business Machines Corporation
- Hendrik F. Hamann
- G11 - INFORMATION STORAGE
Information Patent Grant
Fully silicided metal gate semiconductor device structure
- Patent number 7,473,975
- Issue date Jan 6, 2009
- International Business Machines Corporation
- Glenn A. Biery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Porous silicon composite structure as large filtration array
- Patent number 7,282,148
- Issue date Oct 16, 2007
- International Business Machines Corporation
- Timothy Joseph Dalton
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Grant
Silicon chip carrier with conductive through-vias and method for fa...
- Patent number 7,276,787
- Issue date Oct 2, 2007
- International Business Machines Corporation
- Daniel Charles Edelstein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of fully silicided (FUSI) gate using a dual silicide process
- Patent number 7,273,777
- Issue date Sep 25, 2007
- International Business Machines Corporation
- Glenn A. Biery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of fully silicided metal gate using dual self-aligned sil...
- Patent number 7,271,455
- Issue date Sep 18, 2007
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep filled vias
- Patent number 7,060,624
- Issue date Jun 13, 2006
- International Business Machines Corporation
- Panayotis Andricacos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CD uniformity of chrome etch to photomask process
- Patent number 7,014,959
- Issue date Mar 21, 2006
- International Business Machines Corporation
- Shaun B. Crawford
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for dry etching photomask material
- Patent number 7,014,958
- Issue date Mar 21, 2006
- International Business Machines Corporation
- Timothy Joseph Dalton
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Self-contained heat sink and a method for fabricating same
- Patent number 6,815,813
- Issue date Nov 9, 2004
- International Business Machines Corporation
- Timothy J. Dalton
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CMOS TRANSISTORS WITH DIFFERENTIAL OXYGEN CONTENT HIGH-K DIELECTRICS
- Publication number 20100148273
- Publication date Jun 17, 2010
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE CMOS CIRCUITS, AND METHODS FOR FABRICATING SAME
- Publication number 20100041221
- Publication date Feb 18, 2010
- International Business Machines Coporation
- John C. Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mobility Enhanced FET Devices
- Publication number 20090298244
- Publication date Dec 3, 2009
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL GATE SELF-ALIGNED INTEGRATION
- Publication number 20090283830
- Publication date Nov 19, 2009
- International Business Machines Corporation
- Alessandro C. Callegari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC SPACER REMOVAL
- Publication number 20090065817
- Publication date Mar 12, 2009
- International Business Machines Corporation
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Performance Metal Gate CMOS with High-K Gate Dielectric
- Publication number 20090039436
- Publication date Feb 12, 2009
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR CREATING RELIABLE DEEP VIA CONNECTIONS IN...
- Publication number 20090039472
- Publication date Feb 12, 2009
- Paul S. Andry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR THE FORMATION OF FULLY SILICIDED METAL GATES
- Publication number 20090029515
- Publication date Jan 29, 2009
- International Business Machines Corporation
- Glenn A. Biery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS TRANSISTORS WITH DIFFERENTIAL OXYGEN CONTENT HIGH-K DIELECTRICS
- Publication number 20080308872
- Publication date Dec 18, 2008
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices with Metal Gate, High-k Dielectric, and Butted Electrodes
- Publication number 20080277726
- Publication date Nov 13, 2008
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mobility Enhanced FET Devices
- Publication number 20080217700
- Publication date Sep 11, 2008
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR CREATING RELIABLE DEEP VIA CONNECTIONS IN...
- Publication number 20080179755
- Publication date Jul 31, 2008
- International Business Machines Corporation
- Paul S. Andry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POROUS SILICON COMPOSITE STRUCTURE AS LARGE FILTRATION ARRAY
- Publication number 20080083697
- Publication date Apr 10, 2008
- Timothy Joseph Dalton
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
FORMATION OF FULLY SILICIDED METAL GATE USING DUAL SELF-ALIGNED SIL...
- Publication number 20080026551
- Publication date Jan 31, 2008
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF FULLY SILICIDED (FUSI) GATE USING A DUAL SILICIDE PROCESS
- Publication number 20070281431
- Publication date Dec 6, 2007
- International Business Machines Corporation
- Glenn A. Biery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance CMOS circuits, and methods for fabricating the same
- Publication number 20070152276
- Publication date Jul 5, 2007
- International Business Machines Corporation
- John C. Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance circuit with metal and polygate electrodes
- Publication number 20070152273
- Publication date Jul 5, 2007
- INTERNATIONAL BUNISESS MACHINES CORPORATION
- Alessandro C. Callegari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual metal gate self-aligned integration
- Publication number 20070138563
- Publication date Jun 21, 2007
- International Business Machines Corporation
- Alessandro C. Callegari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of fully silicided (FUSI) gate using a dual silicide process
- Publication number 20070032010
- Publication date Feb 8, 2007
- International Business Machines Corporation
- Glenn A. Biery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon chip carrier with conductive through-vias and method for fa...
- Publication number 20060027934
- Publication date Feb 9, 2006
- International Business Machines Corporation
- Daniel Charles Edelstein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of fully silicided metal gate using dual self-aligned sil...
- Publication number 20060022280
- Publication date Feb 2, 2006
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for the formation of fully silicided metal gates
- Publication number 20060006476
- Publication date Jan 12, 2006
- International Business Machines Corporation
- Glenn A. Biery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon chip carrier with conductive through-vias and method for fa...
- Publication number 20050121768
- Publication date Jun 9, 2005
- International Business Machines Corporation
- Daniel Charles Edelstein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-bit phase change memory cell and multi-bit phase change memor...
- Publication number 20050112896
- Publication date May 26, 2005
- International Business Machines Corporation
- Hendrik F. Hamann
- G11 - INFORMATION STORAGE
Information Patent Application
Porous silicon composite structure as large filtration array
- Publication number 20050092676
- Publication date May 5, 2005
- IBM
- Timothy Joseph Dalton
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
Deep filled vias
- Publication number 20050037608
- Publication date Feb 17, 2005
- IBM
- Panayotis Andricacos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DRY ETCHING PHOTOMASK MATERIAL
- Publication number 20040265703
- Publication date Dec 30, 2004
- International Business Machines Corporation
- Timothy Joseph Dalton
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
IMPROVED CD UNIFORMITY OF CHROME ETCH TO PHOTOMASK PROCESS
- Publication number 20040262264
- Publication date Dec 30, 2004
- International Business Machines Corporation
- Shaun B. Crawford
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Michelle Leigh Steen

Person

Patents Grantslast 30 patents

High performance CMOS circuits, and methods for fabricating same

Methods for the formation of fully silicided metal gates

Structure and method for creating reliable deep via connections in...

CMOS transistors with differential oxygen content high-K dielectrics

Dielectric spacer removal

Dual metal gate self-aligned integration

Method of fabricating a semiconductor structure including one devic...

Formation of fully silicided metal gate using dual self-aligned sil...

Methods for the formation of fully silicided metal gates

CMOS transistors with differential oxygen content high-k dielectrics

Dual metal gate self-aligned integration

Multi-bit phase change memory cell and multi-bit phase change memor...

Fully silicided metal gate semiconductor device structure

Porous silicon composite structure as large filtration array

Silicon chip carrier with conductive through-vias and method for fa...

Formation of fully silicided (FUSI) gate using a dual silicide process

Formation of fully silicided metal gate using dual self-aligned sil...

Deep filled vias

CD uniformity of chrome etch to photomask process

Method for dry etching photomask material

Self-contained heat sink and a method for fabricating same

Patents Applicationslast 30 patents

CMOS TRANSISTORS WITH DIFFERENTIAL OXYGEN CONTENT HIGH-K DIELECTRICS

HIGH PERFORMANCE CMOS CIRCUITS, AND METHODS FOR FABRICATING SAME

Mobility Enhanced FET Devices

DUAL METAL GATE SELF-ALIGNED INTEGRATION

DIELECTRIC SPACER REMOVAL

High Performance Metal Gate CMOS with High-K Gate Dielectric

STRUCTURE AND METHOD FOR CREATING RELIABLE DEEP VIA CONNECTIONS IN...

METHODS FOR THE FORMATION OF FULLY SILICIDED METAL GATES

CMOS TRANSISTORS WITH DIFFERENTIAL OXYGEN CONTENT HIGH-K DIELECTRICS

Devices with Metal Gate, High-k Dielectric, and Butted Electrodes

Mobility Enhanced FET Devices

STRUCTURE AND METHOD FOR CREATING RELIABLE DEEP VIA CONNECTIONS IN...

POROUS SILICON COMPOSITE STRUCTURE AS LARGE FILTRATION ARRAY

FORMATION OF FULLY SILICIDED METAL GATE USING DUAL SELF-ALIGNED SIL...

FORMATION OF FULLY SILICIDED (FUSI) GATE USING A DUAL SILICIDE PROCESS

High performance CMOS circuits, and methods for fabricating the same

High performance circuit with metal and polygate electrodes

Dual metal gate self-aligned integration

Formation of fully silicided (FUSI) gate using a dual silicide process

Silicon chip carrier with conductive through-vias and method for fa...

Formation of fully silicided metal gate using dual self-aligned sil...

Methods for the formation of fully silicided metal gates

Silicon chip carrier with conductive through-vias and method for fa...

Multi-bit phase change memory cell and multi-bit phase change memor...

Porous silicon composite structure as large filtration array

Deep filled vias

METHOD FOR DRY ETCHING PHOTOMASK MATERIAL

IMPROVED CD UNIFORMITY OF CHROME ETCH TO PHOTOMASK PROCESS