Michihiko Yamanouchi

Person

Sendai-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic material and method of manufacturing the same
- Patent number 10,706,996
- Issue date Jul 7, 2020
- Tohoku University
- Shunsuke Fukami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control method for magnetoresistance effect element and control dev...
- Patent number 10,127,957
- Issue date Nov 13, 2018
- Tohoku University
- Shun Kanai
- G11 - INFORMATION STORAGE
Information Patent Grant
Three terminal magnetoresistive devices, magnetoresistive random ac...
- Patent number 10,020,039
- Issue date Jul 10, 2018
- Tohoku University
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element and magnetic memory
- Patent number 9,799,822
- Issue date Oct 24, 2017
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 9,577,182
- Issue date Feb 21, 2017
- Tohoku University
- Shoji Ikeda
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 9,202,545
- Issue date Dec 1, 2015
- Tohoku University
- Hideo Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junctions with perpendicular magnetization and magn...
- Patent number 9,070,457
- Issue date Jun 30, 2015
- Tohoku University
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Grant
Current injection magnetic domain wall moving element
- Patent number 8,331,140
- Issue date Dec 11, 2012
- Japan Science and Technology Agency
- Hideo Ohno
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
CONTROL METHOD FOR MAGNETORESISTANCE EFFECT ELEMENT AND CONTROL DEV...
- Publication number 20160329086
- Publication date Nov 10, 2016
- TOHOKU UNIVERSITY
- Shun KANAI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE DEVICE, MAGNETORESISTIVE RANDOM ACCESS MEMORY AND...
- Publication number 20160247550
- Publication date Aug 25, 2016
- NEC Corporation
- Shunsuke FUKAMI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20160233416
- Publication date Aug 11, 2016
- TOHOKU UNIVERSITY
- Shoji IKEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MATERIAL AND METHOD OF MANUFACTURING THE SAME
- Publication number 20150332818
- Publication date Nov 19, 2015
- NEC Corporation
- Shunsuke FUKAMI
- B32 - LAYERED PRODUCTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20150109853
- Publication date Apr 23, 2015
- TOHOKU UNIVERSITY
- Hideo Sato
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
- Publication number 20140097509
- Publication date Apr 10, 2014
- Tohoku University
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTIONS WITH PERPENDICULAR MAGNETIZATION AND MAGN...
- Publication number 20120300543
- Publication date Nov 29, 2012
- TOHOKU UNIVERSITY
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Application
Current Injection Magnetic Domain Wall Moving Element
- Publication number 20080137405
- Publication date Jun 12, 2008
- Japan Science and Technology Agency
- Hideo Ohno
- G11 - INFORMATION STORAGE

Michihiko Yamanouchi

Person

Patents Grantslast 30 patents

Magnetic material and method of manufacturing the same

Control method for magnetoresistance effect element and control dev...

Three terminal magnetoresistive devices, magnetoresistive random ac...

Magnetic memory element and magnetic memory

Magnetoresistance effect element and magnetic memory

Magnetoresistance effect element and magnetic memory

Magnetic tunnel junctions with perpendicular magnetization and magn...

Current injection magnetic domain wall moving element

Patents Applicationslast 30 patents

CONTROL METHOD FOR MAGNETORESISTANCE EFFECT ELEMENT AND CONTROL DEV...

MAGNETORESISTIVE DEVICE, MAGNETORESISTIVE RANDOM ACCESS MEMORY AND...

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETIC MATERIAL AND METHOD OF MANUFACTURING THE SAME

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY

MAGNETIC TUNNEL JUNCTIONS WITH PERPENDICULAR MAGNETIZATION AND MAGN...

Current Injection Magnetic Domain Wall Moving Element