Michimasa Miyanaga

Person

Itami-shi Hyogo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Composite material, part for continuous casting, continuous casting...
- Patent number 9,254,519
- Issue date Feb 9, 2016
- Sumitomo Electric Industries, Ltd.
- Michimasa Miyanaga
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Coil material and method for manufacturing the same
- Patent number 9,222,160
- Issue date Dec 29, 2015
- Sumitomo Electric Industries, Ltd.
- Masatada Numano
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Composite of III-nitride crystal on laterally stacked substrates
- Patent number 9,064,706
- Issue date Jun 23, 2015
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Si(1-V-W-X)CWAlXNV substrate, and epitaxial wafer
- Patent number 8,937,339
- Issue date Jan 20, 2015
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Composite of III-nitride crystal on laterally stacked substrates
- Patent number 8,872,309
- Issue date Oct 28, 2014
- Sumitomo Electronic Industries, Ltd.
- Naho Mizuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing nitride substrate, and nitride substrate
- Patent number 8,829,658
- Issue date Sep 9, 2014
- Sumitomo Electric Industries, Ltd.
- Satoshi Arakawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing Si(1-v-w-x)CwAlxNv base material, process for...
- Patent number 8,715,414
- Issue date May 6, 2014
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing III-nitride crystal
- Patent number 8,709,923
- Issue date Apr 29, 2014
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
AlxGa1-xN crystal substrate
- Patent number 8,702,865
- Issue date Apr 22, 2014
- Sumitomo Electric Industries, Ltd.
- Michimasa Miyanaga
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Nitride semiconductor crystal manufacturing apparatus, nitride semi...
- Patent number 8,613,802
- Issue date Dec 24, 2013
- Sumitomo Electric Industies, Ltd.
- Issei Satoh
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Compound semiconductor single-crystal manufacturing device and manu...
- Patent number 8,591,653
- Issue date Nov 26, 2013
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a Si(1-v-w-x)CwAlxNv substrate, method of m...
- Patent number 8,540,817
- Issue date Sep 24, 2013
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
AlN crystal and method for growing the same, and AlN crystal substrate
- Patent number 8,470,090
- Issue date Jun 25, 2013
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Group-III nitride crystal composite
- Patent number 8,404,042
- Issue date Mar 26, 2013
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Group III nitride single crystal and method of its growth
- Patent number 8,377,204
- Issue date Feb 19, 2013
- Sumitomo Electric Industries, Ltd.
- Michimasa Miyanaga
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Thin film of aluminum nitride and process for producing the thin fi...
- Patent number 8,367,577
- Issue date Feb 5, 2013
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
III-nitride single-crystal growth method
- Patent number 8,361,226
- Issue date Jan 29, 2013
- Sumitomo Electric Industries, Ltd.
- Michimasa Miyanaga
- C30 - CRYSTAL GROWTH
Information Patent Grant
AlxGa(1-x)N single crystal, method of producing AlxGa(1-x)N single...
- Patent number 8,363,326
- Issue date Jan 29, 2013
- Sumitomo Electric Industries, Ltd.
- Satoshi Arakawa
- G02 - OPTICS
Information Patent Grant
Process for producing Si(1-v-w-x)CwAlxNv base material, process for...
- Patent number 8,357,597
- Issue date Jan 22, 2013
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for growing aluminum nitride crystal, process for producing...
- Patent number 8,323,402
- Issue date Dec 4, 2012
- Sumitomo Electric Industries, Ltd.
- Keisuke Tanizaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing group III nitride semiconductor crystal and grow...
- Patent number 8,293,011
- Issue date Oct 23, 2012
- Sumitomo Electric Industries, Ltd.
- Michimasa Miyanaga
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for growing AlxGa1-xN crystal, and AlxGa1-xN crystal substrate
- Patent number 8,293,012
- Issue date Oct 23, 2012
- Sumitomo Electric Industries, Ltd.
- Michimasa Miyanaga
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Wavelength conversion element and method for manufacturing waveleng...
- Patent number 8,259,386
- Issue date Sep 4, 2012
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- G02 - OPTICS
Information Patent Grant
Method of manufacturing III-nitride crystal, and semiconductor devi...
- Patent number 8,258,051
- Issue date Sep 4, 2012
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Wavelength converter manufacturing method and wavelength converter
- Patent number 7,995,267
- Issue date Aug 9, 2011
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- G02 - OPTICS
Information Patent Grant
Nitride semiconductor wafer
- Patent number 7,390,359
- Issue date Jun 24, 2008
- Sumitomo Electric Industries, Ltd.
- Michimasa Miyanaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Porous silicon nitride ceramics and method for producing the same
- Patent number 7,041,366
- Issue date May 9, 2006
- Sumitomo Electric Industries, Ltd.
- Michimasa Miyanaga
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Porous ceramics and method of preparing the same as well as microst...
- Patent number 6,800,360
- Issue date Oct 5, 2004
- Sumitomo Electric Industries, Ltd.
- Michimasa Miyanaga
- B24 - GRINDING POLISHING
Information Patent Grant
Si3N4 sintered body with high thermal conductivity and method for p...
- Patent number 6,617,272
- Issue date Sep 9, 2003
- Sumitomo Electric Industries, Ltd.
- Ai Itoh
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Silicon nitride composite substrate
- Patent number 6,599,637
- Issue date Jul 29, 2003
- Sumitomo Electric Industries, Ltd.
- Ai Itoh
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR

Patents Applicationslast 30 patents

Information Patent Application
Composite of III-Nitride Crystal on Laterally Stacked Substrates
- Publication number 20150008563
- Publication date Jan 8, 2015
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE
- Publication number 20140357067
- Publication date Dec 4, 2014
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Satoshi ARAKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
Composite of III-Nitride Crystal on Laterally Stacked Substrates
- Publication number 20140175616
- Publication date Jun 26, 2014
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Manufacturing III-Nitride Crystal
- Publication number 20130160699
- Publication date Jun 27, 2013
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR...
- Publication number 20130105858
- Publication date May 2, 2013
- Sumitomo Electric Industries, Ltd.
- Issei SATOH
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOSITE MATERIAL, PART FOR CONTINUOUS CASTING, CONTINUOUS CASTING...
- Publication number 20130089457
- Publication date Apr 11, 2013
- Sumitomo Electric Industries. Ltd.
- Michimasa Miyanaga
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
AlxGa1-xN Crystal Substrate
- Publication number 20130015414
- Publication date Jan 17, 2013
- Sumitomo Electric Industries, Ltd.
- Michimasa Miyanaga
- C30 - CRYSTAL GROWTH
Information Patent Application
Group-III Nitride Crystal Composite
- Publication number 20120315445
- Publication date Dec 13, 2012
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- C30 - CRYSTAL GROWTH
Information Patent Application
COIL MATERIAL AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20120128997
- Publication date May 24, 2012
- Sumitomo Electries Industries, Ltd.
- Masatada Numano
- B21 - MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL PUNCHING...
Information Patent Application
Nitride Semiconductor Crystal Manufacturing Method, Nitride Semicon...
- Publication number 20110265709
- Publication date Nov 3, 2011
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride Semiconductor Crystal Manufacturing Apparatus, Nitride Semi...
- Publication number 20110171462
- Publication date Jul 14, 2011
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE
- Publication number 20110156213
- Publication date Jun 30, 2011
- Sumitomo Electric Industries Ltd.
- Satoshi Arakawa
- C30 - CRYSTAL GROWTH
Information Patent Application
WAVELENGTH CONVERSION ELEMENT AND METHOD FOR MANUFACTURING WAVELENG...
- Publication number 20110134509
- Publication date Jun 9, 2011
- SUMITOMO ELECTRIC INDUSTRIES ,LTD.
- Issei Satoh
- G02 - OPTICS
Information Patent Application
AlGaN BULK CRYSTAL MANUFACTURING METHOD AND AlGaN SUBSTRATE MANUFAC...
- Publication number 20110114016
- Publication date May 19, 2011
- Sumitomo Electric Industries, Ltd.
- Michimasa Miyanaga
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III-NITRIDE CRYSTAL AND GROUP III-NITRID...
- Publication number 20110110840
- Publication date May 12, 2011
- Sumitomo Electric Industries, Ltd.
- Michimasa Miyanaga
- C30 - CRYSTAL GROWTH
Information Patent Application
AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE...
- Publication number 20110109973
- Publication date May 12, 2011
- Sumitomo Electric Industries, Ltd.
- Satoshi Arakawa
- C30 - CRYSTAL GROWTH
Information Patent Application
AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE...
- Publication number 20110104438
- Publication date May 5, 2011
- Sumitomo Electric Industries, Ltd.
- Satoshi Arakawa
- C30 - CRYSTAL GROWTH
Information Patent Application
AlxGa1-xN Single Crystal and Electromagnetic Wave Transmission Body
- Publication number 20110076453
- Publication date Mar 31, 2011
- Sumitomo Electric Industries, Ltd.
- Satoshi Arakawa
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR...
- Publication number 20110042788
- Publication date Feb 24, 2011
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Growing AlN Crystals, and AlN Laminate
- Publication number 20110042684
- Publication date Feb 24, 2011
- Sumitomo Electric Industries, Ltd.
- Keisuke Tanizaki
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING A Si(1-v-w-x)CwAlxNv SUBSTRATE, METHOD OF M...
- Publication number 20110039071
- Publication date Feb 17, 2011
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR...
- Publication number 20110031534
- Publication date Feb 10, 2011
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Issei Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
Compound Semiconductor Single-Crystal Manufacturing Device and Manu...
- Publication number 20100319614
- Publication date Dec 23, 2010
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Growing AlxGa1-xN Single Crystal
- Publication number 20100307405
- Publication date Dec 9, 2010
- Sumitomo Electric Industries, Ltd.
- Michimasa Miyanaga
- C30 - CRYSTAL GROWTH
Information Patent Application
AlN Crystal and Method of Its Growth
- Publication number 20100242833
- Publication date Sep 30, 2010
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Growing AlxGa1-xN Crystal, and AlxGa1-xN Crystal Substrate
- Publication number 20100233433
- Publication date Sep 16, 2010
- Sumitomo Electric Industries, Ltd.
- Michimasa Miyanaga
- C30 - CRYSTAL GROWTH
Information Patent Application
AlN Crystal and Method for Growing the Same, and AlN Crystal Substrate
- Publication number 20100221539
- Publication date Sep 2, 2010
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- C30 - CRYSTAL GROWTH
Information Patent Application
Thin Film of Aluminum Nitride and Process for Producing the Thin Fi...
- Publication number 20100209622
- Publication date Aug 19, 2010
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
-Nitride Single-Crystal Growth Method
- Publication number 20100147211
- Publication date Jun 17, 2010
- Sumitomo Electric Industries, Ltd.
- Michimasa Miyanaga
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Growing Aluminum Nitride Crystal, Process for Producing...
- Publication number 20100143748
- Publication date Jun 10, 2010
- Sumitomo Electric Industries, Ltd.
- Keisuke Tanizaki
- C30 - CRYSTAL GROWTH

Michimasa Miyanaga

Person

Patents Grantslast 30 patents

Composite material, part for continuous casting, continuous casting...

Coil material and method for manufacturing the same

Composite of III-nitride crystal on laterally stacked substrates

Si(1-V-W-X)CWAlXNV substrate, and epitaxial wafer

Composite of III-nitride crystal on laterally stacked substrates

Method of manufacturing nitride substrate, and nitride substrate

Process for producing Si(1-v-w-x)CwAlxNv base material, process for...

Method of manufacturing III-nitride crystal

AlxGa1-xN crystal substrate

Nitride semiconductor crystal manufacturing apparatus, nitride semi...

Compound semiconductor single-crystal manufacturing device and manu...

Method of manufacturing a Si(1-v-w-x)CwAlxNv substrate, method of m...

AlN crystal and method for growing the same, and AlN crystal substrate

Group-III nitride crystal composite

Group III nitride single crystal and method of its growth

Thin film of aluminum nitride and process for producing the thin fi...

III-nitride single-crystal growth method

AlxGa(1-x)N single crystal, method of producing AlxGa(1-x)N single...

Process for producing Si(1-v-w-x)CwAlxNv base material, process for...

Method for growing aluminum nitride crystal, process for producing...

Method for growing group III nitride semiconductor crystal and grow...

Method for growing AlxGa1-xN crystal, and AlxGa1-xN crystal substrate

Wavelength conversion element and method for manufacturing waveleng...

Method of manufacturing III-nitride crystal, and semiconductor devi...

Wavelength converter manufacturing method and wavelength converter

Nitride semiconductor wafer

Porous silicon nitride ceramics and method for producing the same

Porous ceramics and method of preparing the same as well as microst...

Si3N4 sintered body with high thermal conductivity and method for p...

Silicon nitride composite substrate

Patents Applicationslast 30 patents

Composite of III-Nitride Crystal on Laterally Stacked Substrates

METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE

Composite of III-Nitride Crystal on Laterally Stacked Substrates

Method of Manufacturing III-Nitride Crystal

PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR...

COMPOSITE MATERIAL, PART FOR CONTINUOUS CASTING, CONTINUOUS CASTING...

AlxGa1-xN Crystal Substrate

Group-III Nitride Crystal Composite

COIL MATERIAL AND METHOD FOR MANUFACTURING THE SAME

Nitride Semiconductor Crystal Manufacturing Method, Nitride Semicon...

Nitride Semiconductor Crystal Manufacturing Apparatus, Nitride Semi...

METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE

WAVELENGTH CONVERSION ELEMENT AND METHOD FOR MANUFACTURING WAVELENG...

AlGaN BULK CRYSTAL MANUFACTURING METHOD AND AlGaN SUBSTRATE MANUFAC...

METHOD FOR PRODUCING GROUP III-NITRIDE CRYSTAL AND GROUP III-NITRID...

AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE...

AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE...

AlxGa1-xN Single Crystal and Electromagnetic Wave Transmission Body

PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR...

Method of Growing AlN Crystals, and AlN Laminate

METHOD OF MANUFACTURING A Si(1-v-w-x)CwAlxNv SUBSTRATE, METHOD OF M...

PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR...

Compound Semiconductor Single-Crystal Manufacturing Device and Manu...

Method for Growing AlxGa1-xN Single Crystal

AlN Crystal and Method of Its Growth

Method for Growing AlxGa1-xN Crystal, and AlxGa1-xN Crystal Substrate

AlN Crystal and Method for Growing the Same, and AlN Crystal Substrate

Thin Film of Aluminum Nitride and Process for Producing the Thin Fi...

-Nitride Single-Crystal Growth Method

Method for Growing Aluminum Nitride Crystal, Process for Producing...