Michinari Sassa

Person

Aichi-ken, 490-11, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Light-emitting semiconductor device using group III nitrogen compound
- Patent number 7,867,800
- Issue date Jan 11, 2011
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using group III nitrogen compound
- Patent number 7,332,366
- Issue date Feb 19, 2008
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using group III nitrogen compound
- Patent number 7,138,286
- Issue date Nov 21, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting aluminum gallium indium nitride compound semiconduct...
- Patent number 7,001,790
- Issue date Feb 21, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a gallium nitride group compound semicondu...
- Patent number 6,984,536
- Issue date Jan 10, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a gallium nitride group compound semicondu...
- Patent number 6,830,992
- Issue date Dec 14, 2004
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a light-emitting semiconductor device
- Patent number 6,607,595
- Issue date Aug 19, 2003
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using gallium nitride group com...
- Patent number 6,593,599
- Issue date Jul 15, 2003
- Japan Science and Technology Corporation
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride group compound semiconductor
- Patent number 6,472,690
- Issue date Oct 29, 2002
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting device
- Patent number 6,472,689
- Issue date Oct 29, 2002
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using gallium nitride group com...
- Patent number 6,362,017
- Issue date Mar 26, 2002
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting aluminum gallium indium nitride compound semiconduct...
- Patent number 6,265,726
- Issue date Jul 24, 2001
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting semiconductor device using gallium nitride group com...
- Patent number 6,249,012
- Issue date Jun 19, 2001
- Toyoda Gosei Co., Ltd
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using group III Nitrogen compou...
- Patent number 6,005,258
- Issue date Dec 21, 1999
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting semiconductor device using nitrogen-Group III compound
- Patent number 5,905,276
- Issue date May 18, 1999
- Akasaki; Isamu
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using gallium nitride compound
- Patent number 5,862,167
- Issue date Jan 19, 1999
- Toyoda Gosei Co., Ltd
- Michinari Sassa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using a Group III nitride compo...
- Patent number 5,753,939
- Issue date May 19, 1998
- Michinari Sassa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using gallium nitride group com...
- Patent number 5,733,796
- Issue date Mar 31, 1998
- Toyoda Gosei Co., Ltd
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using group III nitride compound
- Patent number 5,652,438
- Issue date Jul 29, 1997
- Toyoda Gosei Co., Ltd
- Michinari Sassa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having group III nitride compound and enabling...
- Patent number 5,650,641
- Issue date Jul 22, 1997
- Toyoda Gosei Co., Ltd.
- Michinari Sassa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device that uses a sapphire...
- Patent number 5,627,109
- Issue date May 6, 1997
- Michinari Sassa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using gallium nitride group com...
- Patent number 5,278,433
- Issue date Jan 11, 1994
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND
- Publication number 20140239313
- Publication date Aug 28, 2014
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND
- Publication number 20120217510
- Publication date Aug 30, 2012
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting semiconductor device using group III nitrogen compound
- Publication number 20110101412
- Publication date May 5, 2011
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting semiconductor device using group III nitrogen compound
- Publication number 20080173880
- Publication date Jul 24, 2008
- TOYODA GOSEI
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting semiconductor device using group III nitrogen compound
- Publication number 20060118821
- Publication date Jun 8, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIght-emitting semiconductor device using group III nitrogen compound
- Publication number 20050224834
- Publication date Oct 13, 2005
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a gallium nitride group compound semicondu...
- Publication number 20020060326
- Publication date May 23, 2002
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting aluminum gallium indium nitride compound semiconduct...
- Publication number 20010019849
- Publication date Sep 6, 2001
- TOTODA GOSEI CO. LTD.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS

Michinari Sassa

Person

Patents Grantslast 30 patents

Light-emitting semiconductor device using group III nitrogen compound

Light-emitting semiconductor device using group III nitrogen compound

Light-emitting semiconductor device using group III nitrogen compound

Light-emitting aluminum gallium indium nitride compound semiconduct...

Method for manufacturing a gallium nitride group compound semicondu...

Method for manufacturing a gallium nitride group compound semicondu...

Method for producing a light-emitting semiconductor device

Light-emitting semiconductor device using gallium nitride group com...

Gallium nitride group compound semiconductor

Light emitting device

Light-emitting semiconductor device using gallium nitride group com...

Light-emitting aluminum gallium indium nitride compound semiconduct...

Light emitting semiconductor device using gallium nitride group com...

Light-emitting semiconductor device using group III Nitrogen compou...

Light emitting semiconductor device using nitrogen-Group III compound

Light-emitting semiconductor device using gallium nitride compound

Light-emitting semiconductor device using a Group III nitride compo...

Light-emitting semiconductor device using gallium nitride group com...

Light-emitting semiconductor device using group III nitride compound

Semiconductor device having group III nitride compound and enabling...

Method of manufacturing a semiconductor device that uses a sapphire...

Light-emitting semiconductor device using gallium nitride group com...

Patents Applicationslast 30 patents

LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND

LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND

Light-emitting semiconductor device using group III nitrogen compound

Light-emitting semiconductor device using group III nitrogen compound

Light-emitting semiconductor device using group III nitrogen compound

LIght-emitting semiconductor device using group III nitrogen compound

Method for manufacturing a gallium nitride group compound semicondu...

Light-emitting aluminum gallium indium nitride compound semiconduct...