Michinori Irikawa

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Waveguide type semiconductor photodetector
- Patent number 5,991,473
- Issue date Nov 23, 1999
- The Furukawa Electric Co., Ltd.
- Kazuaki Nishikata
- G02 - OPTICS
Information Patent Grant
Field effect transistor loaded with multiquantum barrier
- Patent number 5,932,890
- Issue date Aug 3, 1999
- The Furukawa Electric Co., Ltd.
- Michinori Irikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Waveguide type light receiving element
- Patent number 5,926,585
- Issue date Jul 20, 1999
- The Furukawa Electric Co., Ltd.
- Michinori Irikawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductive light-emitting device having strained MQW with AlGaI...
- Patent number 5,920,079
- Issue date Jul 6, 1999
- The Furukawa Electric Co., Ltd.
- Hitoshi Shimizu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multiquantum barrier Schottky junction device
- Patent number 5,789,760
- Issue date Aug 4, 1998
- The Furukawa Electric Co., Ltd.
- Michinori Irikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photo diode providing high-linearity signal current in response to...
- Patent number 5,789,765
- Issue date Aug 4, 1998
- The Furukawa Electric Co., Ltd.
- Kazuaki Nishikata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical semiconductive device with inplanar compressive strain
- Patent number 5,739,543
- Issue date Apr 14, 1998
- The Furukawa Electric Co., Ltd.
- Hitoshi Shimizu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Strained superlattice semiconductor photodetector having a side con...
- Patent number 5,608,230
- Issue date Mar 4, 1997
- The Furukawa Electric Co., Ltd.
- Yoshiyuki Hirayama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor optical device
- Patent number 5,583,878
- Issue date Dec 10, 1996
- The Furukawa Electric Co., Ltd.
- Hitoshi Shimizu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Schottky junction device having a Schottky junction of a semiconduc...
- Patent number 5,572,043
- Issue date Nov 5, 1996
- The Furukawa Electric Co., Ltd.
- Hitoshi Shimizu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Strained superlattice light emitting device
- Patent number 5,521,935
- Issue date May 28, 1996
- The Furukawa Electric Co., Ltd.
- Michinori Irikawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser device
- Patent number 5,470,786
- Issue date Nov 28, 1995
- The Furukawa Electric Co., Ltd.
- Michinori Irikawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing compound semiconductor
- Patent number 5,432,124
- Issue date Jul 11, 1995
- The Furukawa Electric Co., Ltd.
- Kazuaki Nishikata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor laser device
- Patent number 5,394,424
- Issue date Feb 28, 1995
- The Furukawa Electric Co., Ltd.
- Tetsuro Ijichi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with current confinement structure
- Patent number 5,383,213
- Issue date Jan 17, 1995
- The Furukawa Electric Co., Ltd.
- Michinori Irikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group II-VI material semiconductor optical device with strained mul...
- Patent number 5,362,974
- Issue date Nov 8, 1994
- The Furukawa Electric Co., Ltd.
- Michinori Irikawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor double heterostructure laser device with InP current...
- Patent number 5,319,661
- Issue date Jun 7, 1994
- The Furukawa Electric Co., Ltd.
- Michinori Irikawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum barrier semiconductor optical device
- Patent number 5,251,224
- Issue date Oct 5, 1993
- The Furukawa Electric Co., Ltd.
- Michinori Irikawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor optical devices with pn current blocking layers of wi...
- Patent number 5,214,662
- Issue date May 25, 1993
- Furukawa Electric Co., Ltd.
- Michinori Irikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-carrier confinement laser diode with quantum well active and...
- Patent number 5,173,912
- Issue date Dec 22, 1992
- The Furukawa Electric Co., Ltd.
- Masayuki Iwase
- B82 - NANO-TECHNOLOGY

Michinori Irikawa

Person

Patents Grantslast 30 patents

Waveguide type semiconductor photodetector

Field effect transistor loaded with multiquantum barrier

Waveguide type light receiving element

Semiconductive light-emitting device having strained MQW with AlGaI...

Multiquantum barrier Schottky junction device

Photo diode providing high-linearity signal current in response to...

Optical semiconductive device with inplanar compressive strain

Strained superlattice semiconductor photodetector having a side con...

Semiconductor optical device

Schottky junction device having a Schottky junction of a semiconduc...

Strained superlattice light emitting device

Semiconductor laser device

Method of manufacturing compound semiconductor

Semiconductor laser device

Semiconductor device with current confinement structure

Group II-VI material semiconductor optical device with strained mul...

Semiconductor double heterostructure laser device with InP current...

Quantum barrier semiconductor optical device

Semiconductor optical devices with pn current blocking layers of wi...

Double-carrier confinement laser diode with quantum well active and...