Mieno FUMITAKE

Person

Beijing, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor channel-stop layer and method of manufacturing the same
- Patent number 10,068,966
- Issue date Sep 4, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor
- Patent number 9,853,030
- Issue date Dec 26, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Mieno Fumitake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having a heterojunction and manufacturing method thereof
- Patent number 9,543,390
- Issue date Jan 10, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Mieno Fumitake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate stack structure and manufacturing method
- Patent number 9,525,046
- Issue date Dec 20, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device with tensile stress
- Patent number 9,478,654
- Issue date Oct 25, 2016
- Semiconductor Manufacturing International (Beijing) Corporation
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static random access memory (SRAM) device with FinFET transistors
- Patent number 9,437,597
- Issue date Sep 6, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- Mieno Fumitake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Segregated FinFET structure and manufacturing method
- Patent number 9,425,278
- Issue date Aug 23, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device and manufacturing methods
- Patent number 9,419,057
- Issue date Aug 16, 2016
- Semiconductor Manufacturing International (Beijing) Corporation
- Fumitake Mieno
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for image sensor and lens on a silicon back plane...
- Patent number 9,362,331
- Issue date Jun 7, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- Herb He Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor and method for forming the same
- Patent number 9,362,286
- Issue date Jun 7, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- Mieno Fumitake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 9,293,550
- Issue date Mar 22, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- Mieno Fumitake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static memory cell and formation method thereof
- Patent number 9,287,387
- Issue date Mar 15, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- Mieno Fumitake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 9,263,566
- Issue date Feb 16, 2016
- Semiconductor Manufacturing International (Beijing) Corporation
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type field effect transistor and manufacturing method thereof
- Patent number 9,257,538
- Issue date Feb 9, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 9,190,330
- Issue date Nov 17, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Mieno Fumitake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 9,190,331
- Issue date Nov 17, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Mieno Fumitake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistors and fabrication method thereof
- Patent number 9,117,906
- Issue date Aug 25, 2015
- Semiconductor Manufacturing International Corp
- Mieno Fumitake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device
- Patent number 9,112,020
- Issue date Aug 18, 2015
- Semiconductor Manufacturing International Corp
- Neil Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing twin bit structure cell with silicon nitri...
- Patent number 9,064,804
- Issue date Jun 23, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Mieno Fumitake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistors
- Patent number 9,054,193
- Issue date Jun 9, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device and fabrication method
- Patent number 8,975,642
- Issue date Mar 10, 2015
- Semiconductor Manufacturing International Corp
- Neil Zhao
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of fabricating a magnetic tunnel junction device
- Patent number 8,975,091
- Issue date Mar 10, 2015
- Semiconductor Manufacturing International (Beijing) Corporation
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 8,951,871
- Issue date Feb 10, 2015
- Semiconductor Manufacturing International (Beijing) Corporation
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TFT floating gate memory cell structures
- Patent number 8,941,170
- Issue date Jan 27, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory
- Patent number 8,933,428
- Issue date Jan 13, 2015
- Semiconductor Manufacturing International (Beijing) Corporation
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of epitaxially growing silicon by atomic layer deposition fo...
- Patent number 8,906,785
- Issue date Dec 9, 2014
- Semiconductor Manufacturing International (Beijing) Corporation
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistors and fabrication method thereof
- Patent number 8,883,585
- Issue date Nov 11, 2014
- Semiconductor Manufacturing International (Shanghai) Corporation
- Mieno Fumitake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary junction field effect transistor device and its gate-...
- Patent number 8,877,575
- Issue date Nov 4, 2014
- Semiconductor Manufacturing International (Beijing) Corporation
- Mieno Fumitake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 8,871,583
- Issue date Oct 28, 2014
- Semiconductor Manufacturing International (Shanghai) Corporation
- Mieno Fumitake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and related manufacturing method
- Patent number 8,872,243
- Issue date Oct 28, 2014
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIN FIELD EFFECT TRANSISTOR
- Publication number 20160247807
- Publication date Aug 25, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- MIENO FUMITAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STATIC MEMORY CELL
- Publication number 20160155746
- Publication date Jun 2, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- Mieno Fumitake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE AND MANUFACTURING METHODS
- Publication number 20160087009
- Publication date Mar 24, 2016
- Semiconductor Manufacturing International (Beijing) Corporation
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD
- Publication number 20160035826
- Publication date Feb 4, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE STACK STRUCTURE AND MANUFACTURING METHOD
- Publication number 20150364563
- Publication date Dec 17, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEGREGATED FINFET STRUCTURE AND MANUFACTURING METHOD
- Publication number 20150364594
- Publication date Dec 17, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STATIC MEMORY CELL AND FORMATION METHOD THEREOF
- Publication number 20150311311
- Publication date Oct 29, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Mieno Fumitake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR AND MANUFACTURING METHOD THEREOF
- Publication number 20150249148
- Publication date Sep 3, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Mieno Fumitake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR AND METHOD FOR FORMING THE SAME
- Publication number 20150171085
- Publication date Jun 18, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- MIENO FUMITAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE
- Publication number 20150137146
- Publication date May 21, 2015
- SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP.
- NEIL ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF
- Publication number 20150102393
- Publication date Apr 16, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20150037946
- Publication date Feb 5, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Mieno FUMITAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20150021669
- Publication date Jan 22, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Mieno FUMITAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A MAGNETIC TUNNEL JUNCTION DEVICE
- Publication number 20140377884
- Publication date Dec 25, 2014
- Min-Hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTORS
- Publication number 20140319543
- Publication date Oct 30, 2014
- Semiconductor Manufacturing International (Shanghai) Corporation
- HUAXIANG YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTORS AND FABRICATION METHOD THEREOF
- Publication number 20140239355
- Publication date Aug 28, 2014
- HUAXIANG YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR IMAGE SENSOR AND LENS ON A SILICON BACK PLANE...
- Publication number 20140213012
- Publication date Jul 31, 2014
- Semiconductor Manufacturing International (Beijing) Corporation
- HERB HE HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTORS AND FABRICATION METHOD THEREOF
- Publication number 20140203369
- Publication date Jul 24, 2014
- SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP.
- MIENO FUMITAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20140110778
- Publication date Apr 24, 2014
- MIENO FUMITAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE AND FABRICATION METHOD
- Publication number 20140014968
- Publication date Jan 16, 2014
- NEIL ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD
- Publication number 20130334607
- Publication date Dec 19, 2013
- MIENO FUMITAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT-TRANSISTOR (FET) STRUCTURE AND MANUFACTURING METHOD
- Publication number 20130313619
- Publication date Nov 28, 2013
- MIENO FUMITAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDCUTOR DEVICE COMPRISING TRANSISTOR
- Publication number 20130277762
- Publication date Oct 24, 2013
- FUMITAKE MIENO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY AND METHOD FOR FABRICATING THE SAME
- Publication number 20130264537
- Publication date Oct 10, 2013
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20130248946
- Publication date Sep 26, 2013
- SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION (BEIJING)
- Mieno Fumitake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR AND FABRICATION METHOD
- Publication number 20130228864
- Publication date Sep 5, 2013
- SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP.
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR AND FABRICATION METHOD
- Publication number 20130228832
- Publication date Sep 5, 2013
- SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP.
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TFT Floating Gate Memory Cell Structures
- Publication number 20130228847
- Publication date Sep 5, 2013
- Semiconductor Manufacturing International (Beijing) Corporation
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER DEPOSITION EPITAXIAL SILICON GROWTH FOR TFT FLASH MEMO...
- Publication number 20130200384
- Publication date Aug 8, 2013
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY JUNCTION FIELD EFFECT TRANSISTOR DEVICE AND ITS GATE-...
- Publication number 20130168741
- Publication date Jul 4, 2013
- SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION (BEIJING)
- Mieno Fumitake
- H01 - BASIC ELECTRIC ELEMENTS

Mieno FUMITAKE

Person

Patents Grantslast 30 patents

Semiconductor channel-stop layer and method of manufacturing the same

Fin field effect transistor

Transistor having a heterojunction and manufacturing method thereof

Metal gate stack structure and manufacturing method

Method for manufacturing semiconductor device with tensile stress

Static random access memory (SRAM) device with FinFET transistors

Segregated FinFET structure and manufacturing method

Resistive random access memory device and manufacturing methods

Method and system for image sensor and lens on a silicon back plane...

Fin field effect transistor and method for forming the same

Semiconductor device and manufacturing method thereof

Static memory cell and formation method thereof

Semiconductor device and manufacturing method thereof

Fin-type field effect transistor and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Fin field-effect transistors and fabrication method thereof

Transistor device

Method for manufacturing twin bit structure cell with silicon nitri...

Fin field-effect transistors

Transistor device and fabrication method

Method of fabricating a magnetic tunnel junction device

Semiconductor device and manufacturing method thereof

TFT floating gate memory cell structures

Phase change memory

Method of epitaxially growing silicon by atomic layer deposition fo...

Fin field-effect transistors and fabrication method thereof

Complementary junction field effect transistor device and its gate-...

Semiconductor device and manufacturing method thereof

Semiconductor device and related manufacturing method

Patents Applicationslast 30 patents

FIN FIELD EFFECT TRANSISTOR

STATIC MEMORY CELL

RESISTIVE RANDOM ACCESS MEMORY DEVICE AND MANUFACTURING METHODS

SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD

METAL GATE STACK STRUCTURE AND MANUFACTURING METHOD

SEGREGATED FINFET STRUCTURE AND MANUFACTURING METHOD

STATIC MEMORY CELL AND FORMATION METHOD THEREOF

TRANSISTOR AND MANUFACTURING METHOD THEREOF

FIN FIELD EFFECT TRANSISTOR AND METHOD FOR FORMING THE SAME

TRANSISTOR DEVICE

FIN-TYPE FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD OF FABRICATING A MAGNETIC TUNNEL JUNCTION DEVICE

FIN FIELD-EFFECT TRANSISTORS

FIN FIELD-EFFECT TRANSISTORS AND FABRICATION METHOD THEREOF

METHOD AND SYSTEM FOR IMAGE SENSOR AND LENS ON A SILICON BACK PLANE...

FIN FIELD-EFFECT TRANSISTORS AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

TRANSISTOR DEVICE AND FABRICATION METHOD

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD

FIN FIELD-EFFECT-TRANSISTOR (FET) STRUCTURE AND MANUFACTURING METHOD

SEMICONDCUTOR DEVICE COMPRISING TRANSISTOR

PHASE CHANGE MEMORY AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

FIN FIELD EFFECT TRANSISTOR AND FABRICATION METHOD

FIN FIELD EFFECT TRANSISTOR AND FABRICATION METHOD

TFT Floating Gate Memory Cell Structures

ATOMIC LAYER DEPOSITION EPITAXIAL SILICON GROWTH FOR TFT FLASH MEMO...

COMPLEMENTARY JUNCTION FIELD EFFECT TRANSISTOR DEVICE AND ITS GATE-...