Mihel Seitz

Person

Wappingers Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Pitcher-shaped active area for field effect transistor and method o...
- Patent number 6,960,514
- Issue date Nov 1, 2005
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM with vertical transistor and trench capacitor memory cells and...
- Patent number 6,849,496
- Issue date Feb 1, 2005
- Infineon Technologies AG
- Venkatachalam C. Jaiprakash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pitcher-shaped active area for field effect transistor and method o...
- Patent number 6,746,933
- Issue date Jun 8, 2004
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature sidewall oxidation of W/WN/poly-gatestack
- Patent number 6,716,734
- Issue date Apr 6, 2004
- Infineon Technologies AG
- Mihel Seitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of separation between transfer gate and storage node in ver...
- Patent number 6,706,634
- Issue date Mar 16, 2004
- Infineon Technologies AG
- Mihel Seitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio high density plasma (HDP) oxide gapfill method in...
- Patent number 6,667,223
- Issue date Dec 23, 2003
- Infineon Technologies AG
- Mihel Seitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM with vertical transistor and trench capacitor memory cells and...
- Patent number 6,621,112
- Issue date Sep 16, 2003
- Infineon Technologies AG
- Venkatachalam C. Jaiprakash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for high aspect ratio gap fill using sequential HDP-CVD
- Patent number 6,531,377
- Issue date Mar 11, 2003
- Infineon Technologies AG
- Andreas Knorr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for protecting array top oxide
- Patent number 6,509,226
- Issue date Jan 21, 2003
- International Business Machines Corporation
- Venkatachalam C. Jaiprakash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
For mol integration
- Patent number 6,319,840
- Issue date Nov 20, 2001
- International Business Machines Corporation
- Gregory Costrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming and filling isolation trenches
- Patent number 6,294,423
- Issue date Sep 25, 2001
- Infineon Technologies North America Corp.
- Rajeev Malik
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Pitcher-shaped active area for field effect transistor and method o...
- Publication number 20040173858
- Publication date Sep 9, 2004
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM with vertical transistor and trench capacitor memory cells and...
- Publication number 20040029346
- Publication date Feb 12, 2004
- Venkatachalam C. Jaiprakash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE SIDEWALL OXIDATION OF W/WN/POLY-GATESTACK
- Publication number 20030064576
- Publication date Apr 3, 2003
- Infineon Technologies North America Corp.
- Mihel Seitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR HIGH ASPECT RATIO GAP FILL USING SEQUENTIAL HDP-CVD
- Publication number 20030013271
- Publication date Jan 16, 2003
- Infineon Technologies North America Corp.
- Andreas Knorr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High aspect ratio high density plasma (HDP) oxide gapfill method in...
- Publication number 20030013270
- Publication date Jan 16, 2003
- Infineon Technologies North America Corp.
- Mihel Seitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM with vertical transistor and trench capaitor memory cells and...
- Publication number 20020066917
- Publication date Jun 6, 2002
- Venkatachalam C. Jaiprakash
- H01 - BASIC ELECTRIC ELEMENTS

Mihel Seitz

Person

Patents Grantslast 30 patents

Pitcher-shaped active area for field effect transistor and method o...

DRAM with vertical transistor and trench capacitor memory cells and...

Pitcher-shaped active area for field effect transistor and method o...

Low temperature sidewall oxidation of W/WN/poly-gatestack

Control of separation between transfer gate and storage node in ver...

High aspect ratio high density plasma (HDP) oxide gapfill method in...

DRAM with vertical transistor and trench capacitor memory cells and...

Method for high aspect ratio gap fill using sequential HDP-CVD

Process for protecting array top oxide

For mol integration

Method for forming and filling isolation trenches

Patents Applicationslast 30 patents

Pitcher-shaped active area for field effect transistor and method o...

DRAM with vertical transistor and trench capacitor memory cells and...

LOW TEMPERATURE SIDEWALL OXIDATION OF W/WN/POLY-GATESTACK

METHOD FOR HIGH ASPECT RATIO GAP FILL USING SEQUENTIAL HDP-CVD

High aspect ratio high density plasma (HDP) oxide gapfill method in...

DRAM with vertical transistor and trench capaitor memory cells and...