Mihel Seitz

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Dresden, DE

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Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating a semiconductor structure
- Patent number 7,105,404
- Issue date Sep 12, 2006
- Infineon Technologies AG
- Mihel Seitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM with very shallow trench isolation
- Patent number 7,034,352
- Issue date Apr 25, 2006
- Infineon Technologies AG
- Mihel Seitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating transistors having damascene formed gate con...
- Patent number 6,812,092
- Issue date Nov 2, 2004
- Infineon Technologies
- Mihel Seitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three layer aluminum deposition process for high aspect ratio CL co...
- Patent number 6,794,282
- Issue date Sep 21, 2004
- Infineon Technologies AG
- Thomas Goebel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a trench capacitor
- Patent number 6,759,292
- Issue date Jul 6, 2004
- Infineon Technologies AG
- Mihel Seitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact formation using double SiN spacers
- Patent number 6,724,054
- Issue date Apr 20, 2004
- Infineon Technologies AG
- Woo-tag Kang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of Fabricating an Integrated Circuit
- Publication number 20090166318
- Publication date Jul 2, 2009
- Mihel Seitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a semiconductor structure
- Publication number 20050202626
- Publication date Sep 15, 2005
- Infineon Technologies AG
- Mihel Seitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM with very shallow trench isolation
- Publication number 20050173748
- Publication date Aug 11, 2005
- Mihel Seitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three layer aluminum deposition process for high aspect ratio CL co...
- Publication number 20040102001
- Publication date May 27, 2004
- Infineon Technologies North America Corp.
- Thomas Goebel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a trench capacitor
- Publication number 20040084708
- Publication date May 6, 2004
- Infineon Technologies North America Corp
- Mihel Seitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating transistors having damascene formed gate con...
- Publication number 20040033659
- Publication date Feb 19, 2004
- Mihel Seitz
- H01 - BASIC ELECTRIC ELEMENTS