Miho Jomen

Person

Watervliet, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Void-free copper filling of recessed features using a smooth non-ag...
- Patent number 8,247,030
- Issue date Aug 21, 2012
- Tokyo Electron Limited
- Kenji Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Void-free copper filling of recessed features for semiconductor dev...
- Patent number 7,884,012
- Issue date Feb 8, 2011
- Tokyo Electron Limited
- Kenji Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming cobalt nitride cap layers
- Patent number 7,846,841
- Issue date Dec 7, 2010
- Tokyo Electron Limited
- Tadahiro Ishizaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a ruthenium metal cap layer
- Patent number 7,799,681
- Issue date Sep 21, 2010
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for integrating selective low-temperature ruthenium depositi...
- Patent number 7,776,740
- Issue date Aug 17, 2010
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming cobalt tungsten cap layers
- Patent number 7,718,527
- Issue date May 18, 2010
- Tokyo Electron Limited
- Tadahiro Ishizaka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FORMING COBALT NITRIDE CAP LAYERS
- Publication number 20100081275
- Publication date Apr 1, 2010
- TOKYO ELECTRON LIMITED
- Tadahiro Ishizaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING COBALT TUNGSTEN CAP LAYERS
- Publication number 20100081276
- Publication date Apr 1, 2010
- TOKYO ELECTRON LIMITED
- Tadahiro Ishizaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A RUTHENIUM METAL CAP LAYER
- Publication number 20100015798
- Publication date Jan 21, 2010
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
VOID-FREE COPPER FILLING OF RECESSED FEATURES USING A SMOOTH NON-AG...
- Publication number 20090226611
- Publication date Sep 10, 2009
- TOKYO ELECTRON LIMITED
- Kenji SUZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR INTEGRATING SELECTIVE LOW-TEMPERATURE RUTHENIUM DEPOSITI...
- Publication number 20090186481
- Publication date Jul 23, 2009
- TOKYO ELECTRON LIMITED
- Kenji SUZUKI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
VOID-FREE COPPER FILLING OF RECESSED FEATURES FOR SEMICONDUCTOR DEV...
- Publication number 20090087981
- Publication date Apr 2, 2009
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electroless plating apparatus and method
- Publication number 20060081461
- Publication date Apr 20, 2006
- TOKYO ELECTRON LIMITED
- Miho Jomen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Person

Patents Grantslast 30 patents

Void-free copper filling of recessed features using a smooth non-ag...

Void-free copper filling of recessed features for semiconductor dev...

Method for forming cobalt nitride cap layers

Method for forming a ruthenium metal cap layer

Method for integrating selective low-temperature ruthenium depositi...

Method for forming cobalt tungsten cap layers

Patents Applicationslast 30 patents

METHOD FOR FORMING COBALT NITRIDE CAP LAYERS

METHOD FOR FORMING COBALT TUNGSTEN CAP LAYERS

METHOD FOR FORMING A RUTHENIUM METAL CAP LAYER

VOID-FREE COPPER FILLING OF RECESSED FEATURES USING A SMOOTH NON-AG...

METHOD FOR INTEGRATING SELECTIVE LOW-TEMPERATURE RUTHENIUM DEPOSITI...

VOID-FREE COPPER FILLING OF RECESSED FEATURES FOR SEMICONDUCTOR DEV...

Electroless plating apparatus and method