Miki MORIYAMA

Person

Kiyosu-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for producing a group III nitride semiconductor by controlli...
- Patent number 11,280,024
- Issue date Mar 22, 2022
- Toyoda Gosei Co., Ltd.
- Takayuki Sato
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing Group III nitride semiconductor, seed substrat...
- Patent number 10,693,032
- Issue date Jun 23, 2020
- Toyoda Gosei Co., Ltd.
- Miki Moriyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing Group III nitride semiconductor including grow...
- Patent number 10,329,687
- Issue date Jun 25, 2019
- Toyoda Gosei Co., Ltd.
- Miki Moriyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing group III nitride semiconductor single crystal
- Patent number 9,932,688
- Issue date Apr 3, 2018
- Toyoda Gosei Co., Ltd.
- Miki Moriyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing group III nitride semiconductor using a crucible
- Patent number 9,903,042
- Issue date Feb 27, 2018
- Toyoda Gosei Co., Ltd.
- Masateru Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a group III nitride semiconductor crystal and...
- Patent number 9,691,610
- Issue date Jun 27, 2017
- Toyoda Gosei Co., Ltd.
- Shohei Kumegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a group III nitride semiconductor single cryst...
- Patent number 9,567,693
- Issue date Feb 14, 2017
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor crystal removal apparatus and production method for s...
- Patent number 9,388,506
- Issue date Jul 12, 2016
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing light-emitting device
- Patent number 9,315,416
- Issue date Apr 19, 2016
- Toyoda Gosei Co., Ltd.
- Seiji Yamaguchi
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Method for etching a group III nitride semiconductor, method for pr...
- Patent number 9,153,439
- Issue date Oct 6, 2015
- Toyoda Gosei Co., Ltd.
- Shohei Kumegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing group III nitride semiconductor light-emitting...
- Patent number 9,099,627
- Issue date Aug 4, 2015
- Toyoda Gosei Co., Ltd.
- Shingo Totani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting device
- Patent number 9,087,969
- Issue date Jul 21, 2015
- Toyoda Gosei Co., Ltd.
- Satoshi Wada
- F21 - LIGHTING
Information Patent Grant
Group III nitride semiconductor single crystal, method for producin...
- Patent number 8,962,456
- Issue date Feb 24, 2015
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Glass-sealed LED lamp and manufacturing method of the same
- Patent number 8,773,017
- Issue date Jul 8, 2014
- Toyoda Gosei Co., Ltd.
- Satoshi Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing LED lamp
- Patent number 8,759,123
- Issue date Jun 24, 2014
- Toyoda Gosei Co., Ltd.
- Satoshi Wada
- B29 - WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
Information Patent Grant
Method for producing transparent conductive layer comprising TIO2 a...
- Patent number 8,716,047
- Issue date May 6, 2014
- Toyoda Gosei Co., Ltd.
- Koichi Goshonoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of mounting part of semiconductor light emitti...
- Patent number 8,609,444
- Issue date Dec 17, 2013
- Toyoda Gosei Co., Ltd.
- Satoshi Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor light-emitting device and...
- Patent number 8,610,167
- Issue date Dec 17, 2013
- Toyoda Gosei Co., Ltd.
- Miki Moriyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting element and light emitting device
- Patent number 8,350,284
- Issue date Jan 8, 2013
- Toyoda Gosei Co., Ltd.
- Miki Moriyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride semiconductor light-emitting device and productio...
- Patent number 8,309,381
- Issue date Nov 13, 2012
- Toyoda Gosei Co., Ltd.
- Miki Moriyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Internal gear pump
- Patent number 7,968,216
- Issue date Jun 28, 2011
- Toyoda Gosei Co., Ltd.
- Taro Hitosugi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming electrode for group-III nitride compound semicon...
- Patent number 7,947,521
- Issue date May 24, 2011
- Toyota Gosei Co., Ltd.
- Koichi Goshonoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing group III nitride-based compound semiconductor
- Patent number 7,824,929
- Issue date Nov 2, 2010
- Toyoda Gosei Co., Ltd.
- Masato Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor interconnections
- Patent number 7,781,339
- Issue date Aug 24, 2010
- Kobe Steel, Ltd.
- Takashi Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting element
- Patent number 7,723,743
- Issue date May 25, 2010
- Toyoda Gosei Co., Ltd.
- Kosuke Yahata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode for p-type SiC
- Patent number 7,564,062
- Issue date Jul 21, 2009
- Toyoda Gosei, Co., Ltd.
- Tomohiro Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an undercoat layer and method of manufa...
- Patent number 7,550,782
- Issue date Jun 23, 2009
- Toyoda Gosei Co., Ltd.
- Masanori Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method for semiconductor interconnections
- Patent number 7,538,027
- Issue date May 26, 2009
- Kobe Steel, Ltd.
- Takashi Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode for p-type Group III nitride compound semiconductor layer...
- Patent number 7,190,076
- Issue date Mar 13, 2007
- Toyoda Gosei Co., Ltd.
- Ippei Fujimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wiring structure for semiconductor device
- Patent number 7,164,207
- Issue date Jan 16, 2007
- Toyoda Gosei Co., Ltd.
- Masahiro Shimada
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR
- Publication number 20230257902
- Publication date Aug 17, 2023
- Toyoda Gosei Co., Ltd.
- Takayuki SATO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR
- Publication number 20220081800
- Publication date Mar 17, 2022
- Toyoda Gosei Co., Ltd.
- Takayuki SATO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR
- Publication number 20200299857
- Publication date Sep 24, 2020
- Toyoda Gosei Co., Ltd.
- Takayuki SATO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR
- Publication number 20200299858
- Publication date Sep 24, 2020
- Toyoda Gosei Co., Ltd.
- Shiro YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing Group III Nitride Semiconductor, Seed Substrat...
- Publication number 20180097142
- Publication date Apr 5, 2018
- Toyoda Gosei Co., Ltd.
- Miki MORIYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR
- Publication number 20180066378
- Publication date Mar 8, 2018
- Toyoda Gosei Co., Ltd.
- Miki MORIYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYST...
- Publication number 20170081780
- Publication date Mar 23, 2017
- Toyoda Gosei Co., Ltd.
- Seiji NAGAI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYSTAL
- Publication number 20170058425
- Publication date Mar 2, 2017
- Toyoda Gosei Co., Ltd.
- Miki MORIYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR, AND CRUCIBLE...
- Publication number 20160160381
- Publication date Jun 9, 2016
- Toyoda Gosei Co., Ltd.
- Masateru YAMAZAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing a Group III Nitride Semiconductor Crystal and...
- Publication number 20140360426
- Publication date Dec 11, 2014
- Toyoda Gosei Co., Ltd.
- Shohei Kumegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Etching a Group III Nitride Semiconductor, Method for Pr...
- Publication number 20140363954
- Publication date Dec 11, 2014
- Shohei Kumegawa
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYSTAL, METHOD FOR PRODUCIN...
- Publication number 20140070370
- Publication date Mar 13, 2014
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR CRYSTAL REMOVAL APPARATUS AND PRODUCTION METHOD FOR S...
- Publication number 20140000509
- Publication date Jan 2, 2014
- Shiro YAMAZAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYST...
- Publication number 20130199438
- Publication date Aug 8, 2013
- Toyoda Gosei Co., Ltd.
- Seiji NAGAI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING...
- Publication number 20130203194
- Publication date Aug 8, 2013
- TOYODA GOSEI CO,. LTD.
- Shingo Totani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GLASS-SEALED LED LAMP AND MANUFACTURING METHOD OF THE SAME
- Publication number 20130063024
- Publication date Mar 14, 2013
- Toyoda Gosei Co., Ltd.
- Satoshi Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing light-emitting device
- Publication number 20120067085
- Publication date Mar 22, 2012
- Sumita Optical Glass, INC.
- Seiji Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing led lamp
- Publication number 20100244071
- Publication date Sep 30, 2010
- Toyoda Gosei Co., Ltd.
- Satoshi Wada
- B29 - WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
Information Patent Application
Light-emitting device
- Publication number 20100237369
- Publication date Sep 23, 2010
- Toyoda Gosei Co., Ltd.
- Satoshi Wada
- F21 - LIGHTING
Information Patent Application
Manufacturing method of mounting part of semiconductor light emitti...
- Publication number 20100219444
- Publication date Sep 2, 2010
- Toyoda Gosei Co., Ltd.
- Satoshi Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light emitting element and light emitting device
- Publication number 20100078649
- Publication date Apr 1, 2010
- Toyoda Gosei Co., Ltd.
- Miki Moriyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride semiconductor light-emitting device and productio...
- Publication number 20100078672
- Publication date Apr 1, 2010
- Toyoda Gosei Co., Ltd.
- Miki Moriyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride compound semiconductor light-emitting device and...
- Publication number 20100078660
- Publication date Apr 1, 2010
- Toyoda Gosei Co., Ltd.
- Miki Moriyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing transparent conductive layer comprising TIO2 a...
- Publication number 20100062558
- Publication date Mar 11, 2010
- Toyoda Gosei Co., Ltd.
- Koichi Goshonoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERNAL GEAR PUMP
- Publication number 20100035082
- Publication date Feb 11, 2010
- Taro Hitosugi
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III nitride semiconductor light-emitting device and productio...
- Publication number 20090200563
- Publication date Aug 13, 2009
- Toyoda Gosei Co., Ltd.
- Koichi Goshonoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing group III nitride-based compound semiconductor
- Publication number 20090104757
- Publication date Apr 23, 2009
- Toyoda Gosei Co., Ltd.
- Masato Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride-based compound semiconductor light-emitting device
- Publication number 20090072267
- Publication date Mar 19, 2009
- Toyoda Gosei Co., Ltd.
- Koichi Goshonoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride-based compound semiconductor light-emitting device
- Publication number 20080308833
- Publication date Dec 18, 2008
- Toyoda Gosei Co., Ltd.
- Miki Moriyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming electrode for Group-III nitride compound semicon...
- Publication number 20080293231
- Publication date Nov 27, 2008
- Toyoda Gosei Co., Ltd.
- Koichi Goshonoo
- H01 - BASIC ELECTRIC ELEMENTS

Miki MORIYAMA

Person

Patents Grantslast 30 patents

Method for producing a group III nitride semiconductor by controlli...

Method for producing Group III nitride semiconductor, seed substrat...

Method for producing Group III nitride semiconductor including grow...

Method for producing group III nitride semiconductor single crystal

Method for producing group III nitride semiconductor using a crucible

Method for producing a group III nitride semiconductor crystal and...

Method for producing a group III nitride semiconductor single cryst...

Semiconductor crystal removal apparatus and production method for s...

Method of manufacturing light-emitting device

Method for etching a group III nitride semiconductor, method for pr...

Method for producing group III nitride semiconductor light-emitting...

Light-emitting device

Group III nitride semiconductor single crystal, method for producin...

Glass-sealed LED lamp and manufacturing method of the same

Method of manufacturing LED lamp

Method for producing transparent conductive layer comprising TIO2 a...

Manufacturing method of mounting part of semiconductor light emitti...

Group III nitride compound semiconductor light-emitting device and...

Light emitting element and light emitting device

Group III nitride semiconductor light-emitting device and productio...

Internal gear pump

Method for forming electrode for group-III nitride compound semicon...

Method for producing group III nitride-based compound semiconductor

Method of fabricating semiconductor interconnections

Semiconductor light emitting element

Electrode for p-type SiC

Semiconductor device having an undercoat layer and method of manufa...

Fabrication method for semiconductor interconnections

Electrode for p-type Group III nitride compound semiconductor layer...

Wiring structure for semiconductor device

Patents Applicationslast 30 patents

METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR

METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR

METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR

Method for Producing Group III Nitride Semiconductor, Seed Substrat...

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR

METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYST...

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYSTAL

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR, AND CRUCIBLE...

Method for Producing a Group III Nitride Semiconductor Crystal and...

Method for Etching a Group III Nitride Semiconductor, Method for Pr...

GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYSTAL, METHOD FOR PRODUCIN...

SEMICONDUCTOR CRYSTAL REMOVAL APPARATUS AND PRODUCTION METHOD FOR S...

METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYST...

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING...

GLASS-SEALED LED LAMP AND MANUFACTURING METHOD OF THE SAME

Method of manufacturing light-emitting device

Method of manufacturing led lamp

Light-emitting device

Manufacturing method of mounting part of semiconductor light emitti...

Light emitting element and light emitting device

Group III nitride semiconductor light-emitting device and productio...

Group III Nitride compound semiconductor light-emitting device and...

Method for producing transparent conductive layer comprising TIO2 a...

INTERNAL GEAR PUMP

Group III nitride semiconductor light-emitting device and productio...

Method for producing group III nitride-based compound semiconductor

Group III nitride-based compound semiconductor light-emitting device

Group III nitride-based compound semiconductor light-emitting device

Method for forming electrode for Group-III nitride compound semicon...