Milan Pophristic

Person

Princeton, NJ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Multi-mode ionization apparatus and uses thereof
- Patent number 12,205,807
- Issue date Jan 21, 2025
- MSTM, LLC
- Milan Pophristic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement-mode HFET circuit arrangement having high power and a h...
- Patent number 8,963,209
- Issue date Feb 24, 2015
- Power Integrations, Inc.
- Xiaobin Xin
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Layout design for a high power, GaN-based FET having interdigitated...
- Patent number 8,729,565
- Issue date May 20, 2014
- Power Integrations, Inc.
- Linlin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layout design for a high power, GaN-based FET having interdigitated...
- Patent number 8,530,903
- Issue date Sep 10, 2013
- Power Integrations, Inc.
- Linlin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement-mode HFET circuit arrangement having high power and hig...
- Patent number 8,368,121
- Issue date Feb 5, 2013
- Power Integrations, Inc.
- Xiaobin Xin
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Layout design for a high power, GaN-based FET
- Patent number 8,319,256
- Issue date Nov 27, 2012
- Power Integrations, Inc.
- Linlin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination and contact structures for a high voltage GaN-based het...
- Patent number 8,169,003
- Issue date May 1, 2012
- Power Integrations, Inc.
- Michael Murphy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination and contact structures for a high voltage GaN-based het...
- Patent number 7,939,853
- Issue date May 10, 2011
- Power Integrations, Inc.
- Michael Murphy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride semiconductor device
- Patent number 7,863,172
- Issue date Jan 4, 2011
- Power Integrations, Inc.
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride semiconductor device
- Patent number 7,436,039
- Issue date Oct 14, 2008
- Velox Semiconductor Corporation
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low doped layer for nitride-based semiconductor device
- Patent number 7,253,015
- Issue date Aug 7, 2007
- Velox Semiconductor Corporation
- Milan Pophristic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-activated guard ring for semiconductor devices
- Patent number 7,229,866
- Issue date Jun 12, 2007
- Velox Semiconductor Corporation
- Ting Gang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures for gallium nitride-based devices
- Patent number 7,115,896
- Issue date Oct 3, 2006
- Emcore Corporation
- Shiping Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral conduction Schottky diode with plural mesas
- Patent number 7,084,475
- Issue date Aug 1, 2006
- Velox Semiconductor Corporation
- Bryan S. Shelton
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MULTI-MODE IONIZATION APPARATUS AND USES THEREOF
- Publication number 20250157805
- Publication date May 15, 2025
- MSTM, LLC
- Milan Pophristic
- G01 - MEASURING TESTING
Information Patent Application
Vacuum Chamber Assembly with Multiple Functions to Maximize Univers...
- Publication number 20250069878
- Publication date Feb 27, 2025
- MSTM, LLC
- Charles N. McEwen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-MODE IONIZATION APPARATUS AND USES THEREOF
- Publication number 20210343518
- Publication date Nov 4, 2021
- MSTM, LLC
- Milan Pophristic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYOUT DESIGN FOR A HIGH POWER, GaN-BASED FET
- Publication number 20130328060
- Publication date Dec 12, 2013
- Power Integrations, Inc.
- LinLin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-MODE HFET CIRCUIT ARRANGEMENT HAVING HIGH POWER AND A H...
- Publication number 20130146891
- Publication date Jun 13, 2013
- Power Integrations, Inc.
- Xiaobin XIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYOUT DESIGN FOR A HIGH POWER, GaN-BASED FET
- Publication number 20130043487
- Publication date Feb 21, 2013
- Power Integrations, Inc.
- LinLin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Termination and Contact Structures for a High Voltage Gan-Based Het...
- Publication number 20120238063
- Publication date Sep 20, 2012
- Power Integrations, Inc.
- Michael Murphy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYOUT DESIGN FOR A HIGH POWER, GaN-BASED FET
- Publication number 20110316045
- Publication date Dec 29, 2011
- Velox Semiconductor Corporation
- Linlin LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-MODE HFET CIRCUIT ARRANGEMENT HAVING HIGH POWER AND A H...
- Publication number 20110309372
- Publication date Dec 22, 2011
- Velox Semiconductor Corporation
- Xiaobin XIN
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Gallium nitride semiconductor
- Publication number 20110101371
- Publication date May 5, 2011
- Power Integrations, Inc.
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage GaN-based heterojunction transistor structure and meth...
- Publication number 20090321787
- Publication date Dec 31, 2009
- VELOX Semiconductor Corporation
- Michael Murphy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride Semiconductor Device
- Publication number 20090035925
- Publication date Feb 5, 2009
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Termination and contact structures for a high voltage GaN-based het...
- Publication number 20080230785
- Publication date Sep 25, 2008
- VELOX Semiconductor Corporation
- Michael Murphy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical structure semiconductor devices and method of fabricating...
- Publication number 20070093037
- Publication date Apr 26, 2007
- Velox Semicondutor Corporation
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride-based devices and manufacturing process
- Publication number 20060154455
- Publication date Jul 13, 2006
- Emcore Corporation
- Shiping Guo
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium nitride semiconductor device
- Publication number 20060145283
- Publication date Jul 6, 2006
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-activated guard ring for semiconductor devices
- Publication number 20050202661
- Publication date Sep 15, 2005
- Alex Ceruzzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low doped layer for nitride-based semiconductor device
- Publication number 20050179107
- Publication date Aug 18, 2005
- Emcore Corporation
- Milan Pophristic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral conduction schottky diode with plural mesas
- Publication number 20050179104
- Publication date Aug 18, 2005
- Emcore Corporation
- Bryan S. Shelton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride-based devices and manufacturing process
- Publication number 20040119063
- Publication date Jun 24, 2004
- Emcore Corporation
- Shiping Guo
- C30 - CRYSTAL GROWTH

Milan Pophristic

Person

Patents Grantslast 30 patents

Multi-mode ionization apparatus and uses thereof

Enhancement-mode HFET circuit arrangement having high power and a h...

Layout design for a high power, GaN-based FET having interdigitated...

Layout design for a high power, GaN-based FET having interdigitated...

Enhancement-mode HFET circuit arrangement having high power and hig...

Layout design for a high power, GaN-based FET

Termination and contact structures for a high voltage GaN-based het...

Termination and contact structures for a high voltage GaN-based het...

Gallium nitride semiconductor device

Gallium nitride semiconductor device

Low doped layer for nitride-based semiconductor device

Non-activated guard ring for semiconductor devices

Semiconductor structures for gallium nitride-based devices

Lateral conduction Schottky diode with plural mesas

Patents Applicationslast 30 patents

MULTI-MODE IONIZATION APPARATUS AND USES THEREOF

Vacuum Chamber Assembly with Multiple Functions to Maximize Univers...

MULTI-MODE IONIZATION APPARATUS AND USES THEREOF

LAYOUT DESIGN FOR A HIGH POWER, GaN-BASED FET

ENHANCEMENT-MODE HFET CIRCUIT ARRANGEMENT HAVING HIGH POWER AND A H...

LAYOUT DESIGN FOR A HIGH POWER, GaN-BASED FET

Termination and Contact Structures for a High Voltage Gan-Based Het...

LAYOUT DESIGN FOR A HIGH POWER, GaN-BASED FET

ENHANCEMENT-MODE HFET CIRCUIT ARRANGEMENT HAVING HIGH POWER AND A H...

Gallium nitride semiconductor

High voltage GaN-based heterojunction transistor structure and meth...

Gallium Nitride Semiconductor Device

Termination and contact structures for a high voltage GaN-based het...

Vertical structure semiconductor devices and method of fabricating...

Gallium nitride-based devices and manufacturing process

Gallium nitride semiconductor device

Non-activated guard ring for semiconductor devices

Low doped layer for nitride-based semiconductor device

Lateral conduction schottky diode with plural mesas

Gallium nitride-based devices and manufacturing process