Min-Chang CHING

Person

Zhubei City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Ion implantation system
- Patent number 12,125,665
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Kai-Yun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT) having an indium-containin...
- Patent number 11,551,927
- Issue date Jan 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Chun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT) having an indium-containin...
- Patent number 10,867,792
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Chun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor with indium nitride layer
- Patent number 10,079,296
- Issue date Sep 18, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Hao Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor with indium nitride layer
- Patent number 9,368,610
- Issue date Jun 14, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hao Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor with indium nitride layer
- Patent number 9,202,875
- Issue date Dec 1, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hao Chiang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ION IMPLANTATION SYSTEM
- Publication number 20240379321
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Kai-Yun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS DISTRIBUTION RING FOR PROCESS CHAMBER
- Publication number 20240379330
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Hsiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CLEANING CHAMBER FOR METAL OXIDE REMOVAL
- Publication number 20240371685
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Liang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS DISTRIBUTION RING FOR PROCESS CHAMBER
- Publication number 20230420222
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Hsiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION SYSTEM
- Publication number 20230369009
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Kai-Yun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) HAVING AN INDIUM-CONTAININ...
- Publication number 20230162976
- Publication date May 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chun LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CLEANING CHAMBER FOR METAL OXIDE REMOVAL
- Publication number 20230062974
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Liang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) HAVING AN INDIUM-CONTAININ...
- Publication number 20210050209
- Publication date Feb 18, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chun LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR WITH INDIUM NITRIDE LAYER
- Publication number 20160284827
- Publication date Sep 29, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hao CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR WITH INDIUM NITRIDE LAYER
- Publication number 20160071969
- Publication date Mar 10, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hao CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) HAVING AN INDIUM-CONTAININ...
- Publication number 20150236146
- Publication date Aug 20, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chun LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR WITH INDIUM NITRIDE LAYER
- Publication number 20150236101
- Publication date Aug 20, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hao CHIANG
- H01 - BASIC ELECTRIC ELEMENTS

Min-Chang CHING

Person

Patents Grantslast 30 patents

Ion implantation system

High electron mobility transistor (HEMT) having an indium-containin...

High electron mobility transistor (HEMT) having an indium-containin...

High electron mobility transistor with indium nitride layer

High electron mobility transistor with indium nitride layer

High electron mobility transistor with indium nitride layer

Patents Applicationslast 30 patents

ION IMPLANTATION SYSTEM

GAS DISTRIBUTION RING FOR PROCESS CHAMBER

CLEANING CHAMBER FOR METAL OXIDE REMOVAL

GAS DISTRIBUTION RING FOR PROCESS CHAMBER

ION IMPLANTATION SYSTEM

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) HAVING AN INDIUM-CONTAININ...

CLEANING CHAMBER FOR METAL OXIDE REMOVAL

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) HAVING AN INDIUM-CONTAININ...

HIGH ELECTRON MOBILITY TRANSISTOR WITH INDIUM NITRIDE LAYER

HIGH ELECTRON MOBILITY TRANSISTOR WITH INDIUM NITRIDE LAYER

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) HAVING AN INDIUM-CONTAININ...

HIGH ELECTRON MOBILITY TRANSISTOR WITH INDIUM NITRIDE LAYER