Min-Hwa Chi

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
FinFET with multilayer fins for multi-value logic (MVL) applications
- Patent number 10,756,213
- Issue date Aug 25, 2020
- GLOBALFOUNDRIES Inc.
- Min-hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method, apparatus and system for improved performance using tall fi...
- Patent number 10,622,463
- Issue date Apr 14, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming gate-all-around (GAA) FinFET and GAA FinFET forme...
- Patent number 10,475,899
- Issue date Nov 12, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices with contact-to-gate shorting through conductive paths betw...
- Patent number 10,438,955
- Issue date Oct 8, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with recessed source/drain contacts and a gate...
- Patent number 10,396,155
- Issue date Aug 27, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with multilayer fins for multi-value logic (MVL) application...
- Patent number 10,388,790
- Issue date Aug 20, 2019
- GLOBALFOUNDRIES Inc.
- Min-hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin structures and multi-Vt scheme based on tapered fin and method...
- Patent number 10,347,740
- Issue date Jul 9, 2019
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fuses with nanowire fuse links and fabrication method...
- Patent number 10,332,834
- Issue date Jun 25, 2019
- GLOBALFOUNDRIES Inc.
- Chun Yu Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit structures with vertically spaced transistors and fabricati...
- Patent number 10,290,654
- Issue date May 14, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple threshold voltages using fin pitch and profile
- Patent number 10,290,634
- Issue date May 14, 2019
- GLOBALFOUNDRIES Inc.
- Wen Pin Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for reducing threshold voltage mismatch in an...
- Patent number 10,276,390
- Issue date Apr 30, 2019
- GLOBALFOUNDRIES Inc.
- Min-hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective SAC capping on fin field effect transistor structures and...
- Patent number 10,269,811
- Issue date Apr 23, 2019
- GLOBALFOUNDRIES Inc.
- Min-hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain parasitic capacitance reduction in FinFET-based semico...
- Patent number 10,243,059
- Issue date Mar 26, 2019
- GLOBALFOUNDRIES Inc.
- Srikanth Balaji Samavedan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures and fabrication methods thereof
- Patent number 10,204,991
- Issue date Feb 12, 2019
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure having multiple n-type and/or p-type elongated...
- Patent number 10,177,157
- Issue date Jan 8, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with recessed source/drain contacts to reduce capacitance
- Patent number 10,170,377
- Issue date Jan 1, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods for dynamically tunable biasing to backplates a...
- Patent number 10,170,353
- Issue date Jan 1, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having local buried oxide
- Patent number 10,170,315
- Issue date Jan 1, 2019
- GLOBALFOUNDRIES Inc.
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming gate-all-around (GAA) FinFET and GAA FinFET forme...
- Patent number 10,164,041
- Issue date Dec 25, 2018
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
OTPROM for post-process programming using selective breakdown
- Patent number 10,147,496
- Issue date Dec 4, 2018
- GLOBALFOUNDRIES Inc.
- Akhilesh Gautam
- G11 - INFORMATION STORAGE
Information Patent Grant
FINFET circuit structures with vertically spaced transistors and fa...
- Patent number 10,147,802
- Issue date Dec 4, 2018
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with isolated source and drain
- Patent number 10,128,333
- Issue date Nov 13, 2018
- GLOBALFOUNDRIES Inc.
- Hoong Shing Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure without gate contact and method of for...
- Patent number 10,121,893
- Issue date Nov 6, 2018
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method, apparatus and system for improved performance using tall fi...
- Patent number 10,115,807
- Issue date Oct 30, 2018
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned back-plane and well contacts for fully depleted silico...
- Patent number 10,115,738
- Issue date Oct 30, 2018
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective SAC capping on fin field effect transistor structures and...
- Patent number 10,096,604
- Issue date Oct 9, 2018
- GLOBALFOUNDRIES Inc.
- Min-hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxidizing and etching of material lines for use in increasing or de...
- Patent number 10,068,766
- Issue date Sep 4, 2018
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain parasitic capacitance reduction in FinFET-based semico...
- Patent number 10,056,468
- Issue date Aug 21, 2018
- GLOBALFOUNDRIES Inc.
- Srikanth Balaji Samavedan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable via devices with metal/semiconductor via links and fab...
- Patent number 10,056,331
- Issue date Aug 21, 2018
- GLOBALFOUNDRIES Inc.
- Ajey P. Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional finFET transistor with portion(s) of the fin chan...
- Patent number 10,038,096
- Issue date Jul 31, 2018
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FINFET WITH MULTILAYER FINS FOR MULTI-VALUE LOGIC (MVL) APPLICATION...
- Publication number 20190326436
- Publication date Oct 24, 2019
- GLOBALFOUNDRIES INC.
- Min-hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH RECESSED SOURCE/DRAIN CONTACTS AND A GATE...
- Publication number 20190296108
- Publication date Sep 26, 2019
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING GATE-ALL-AROUND (GAA) FINFET AND GAA FINFET FORME...
- Publication number 20190123160
- Publication date Apr 25, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH RECESSED SOURCE/DRAIN CONTACTS AND A GATE...
- Publication number 20190088742
- Publication date Mar 21, 2019
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, APPARATUS AND SYSTEM FOR IMPROVED PERFORMANCE USING TALL FI...
- Publication number 20190043965
- Publication date Feb 7, 2019
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE SAC CAPPING ON FIN FIELD EFFECT TRANSISTOR STRUCTURES AND...
- Publication number 20180366470
- Publication date Dec 20, 2018
- GLOBALFOUNDRIES INC.
- Min-hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES WITH CONTACT-TO-GATE SHORTING THROUGH CONDUCTIVE PATHS BETW...
- Publication number 20180286873
- Publication date Oct 4, 2018
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN PARASITIC CAPACITANCE REDUCTION IN FINFET-BASED SEMICO...
- Publication number 20180277655
- Publication date Sep 27, 2018
- GLOBALFOUNDRIES INC.
- Srikanth Balaji SAMAVEDAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES WITH LOW RESISTANCE
- Publication number 20180158821
- Publication date Jun 7, 2018
- GLOBALFOUNDRIES INC.
- Changyong XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL OTPROM FOR POST-PROCESS PROGRAMMING USING SELECTIVE BREAKDOWN
- Publication number 20180151238
- Publication date May 31, 2018
- GLOBALFOUNDRIES INC.
- Akhilesh Gautam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BACK-PLANE AND WELL CONTACTS FOR FULLY DEPLETED SILICO...
- Publication number 20180138203
- Publication date May 17, 2018
- GLOBALFOUNDRIES Inc.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FIN LOOP FOR USE WITH DIFFUSION BREAK
- Publication number 20180130711
- Publication date May 10, 2018
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN PARASITIC CAPACITANCE REDUCTION IN FINFET-BASED SEMICO...
- Publication number 20180069092
- Publication date Mar 8, 2018
- GLOBALFOUNDRIES INC.
- Srikanth Balaji SAMAVEDAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE SAC CAPPING ON FIN FIELD EFFECT TRANSISTOR STRUCTURES AND...
- Publication number 20180069009
- Publication date Mar 8, 2018
- GLOBALFOUNDRIES INC.
- Min-hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITHOUT GATE CONTACT AND METHOD OF FOR...
- Publication number 20180061976
- Publication date Mar 1, 2018
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES WITH CONTACT-TO-GATE SHORTING THROUGH CONDUCTIVE PATHS BETW...
- Publication number 20180061842
- Publication date Mar 1, 2018
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE HAVING N-TYPE AND P-TYPE ELONGATED REGIONS INT...
- Publication number 20180047734
- Publication date Feb 15, 2018
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE VIA DEVICES WITH METAL/SEMICONDUCTOR VIA LINKS AND FAB...
- Publication number 20180033726
- Publication date Feb 1, 2018
- GLOBALFOUNDRIES INC.
- Ajey P. JACOB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR CROSSED-FINS FINFET DEVICE FOR SENSING AND MEASURING MA...
- Publication number 20170371002
- Publication date Dec 28, 2017
- GLOBALFOUNDRIES INC.
- Min-hwa CHI
- G01 - MEASURING TESTING
Information Patent Application
DIODES AND FABRICATION METHODS THEREOF
- Publication number 20170365721
- Publication date Dec 21, 2017
- GLOBALFOUNDRIES INC.
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET CIRCUIT STRUCTURES WITH VERTICALLY SPACED TRANSISTORS AND FA...
- Publication number 20170338235
- Publication date Nov 23, 2017
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT STRUCTURES WITH VERTICALLY SPACED TRANSISTORS AND FABRICATI...
- Publication number 20170338247
- Publication date Nov 23, 2017
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD OF ADJUSTING WORK-FUNCTION METAL THICKNESS TO...
- Publication number 20170338156
- Publication date Nov 23, 2017
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-INSULATOR-METAL CAPACITOR AND METHODS OF FABRICATION
- Publication number 20170309563
- Publication date Oct 26, 2017
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR REDUCING THRESHOLD VOLTAGE MISMATCH IN AN...
- Publication number 20170301544
- Publication date Oct 19, 2017
- GLOBALFOUNDRIES INC.
- Min-hwa CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS FOR DYNAMICALLY TUNABLE BIASING TO BACKPLATES A...
- Publication number 20170294336
- Publication date Oct 12, 2017
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTING, OXIDIZING, AND ETCHING OF MATERIAL LINES FOR USE IN INC...
- Publication number 20170294308
- Publication date Oct 12, 2017
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDIZING AND ETCHING OF MATERIAL LINES FOR USE IN INCREASING OR DE...
- Publication number 20170294309
- Publication date Oct 12, 2017
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH ISOLATED SOURCE AND DRAIN
- Publication number 20170288016
- Publication date Oct 5, 2017
- GLOBALFOUNDRIES INC.
- Hoong Shing WONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS MEMORIZATION AND DEFECT SUPPRESSION TECHNIQUES FOR NMOS TRAN...
- Publication number 20170278949
- Publication date Sep 28, 2017
- GLOBALFOUNDRIES INC.
- Wen-Pin PENG
- H01 - BASIC ELECTRIC ELEMENTS

Min-Hwa Chi

Person

Patents Grantslast 30 patents

FinFET with multilayer fins for multi-value logic (MVL) applications

Method, apparatus and system for improved performance using tall fi...

Method of forming gate-all-around (GAA) FinFET and GAA FinFET forme...

Devices with contact-to-gate shorting through conductive paths betw...

Semiconductor device with recessed source/drain contacts and a gate...

FinFET with multilayer fins for multi-value logic (MVL) application...

Fin structures and multi-Vt scheme based on tapered fin and method...

Semiconductor fuses with nanowire fuse links and fabrication method...

Circuit structures with vertically spaced transistors and fabricati...

Multiple threshold voltages using fin pitch and profile

Method and apparatus for reducing threshold voltage mismatch in an...

Selective SAC capping on fin field effect transistor structures and...

Source/drain parasitic capacitance reduction in FinFET-based semico...

Transistor structures and fabrication methods thereof

Transistor structure having multiple n-type and/or p-type elongated...

Memory cell with recessed source/drain contacts to reduce capacitance

Devices and methods for dynamically tunable biasing to backplates a...

Semiconductor device having local buried oxide

Method of forming gate-all-around (GAA) FinFET and GAA FinFET forme...

OTPROM for post-process programming using selective breakdown

FINFET circuit structures with vertically spaced transistors and fa...

FinFET with isolated source and drain

Integrated circuit structure without gate contact and method of for...

Method, apparatus and system for improved performance using tall fi...

Self-aligned back-plane and well contacts for fully depleted silico...

Selective SAC capping on fin field effect transistor structures and...

Oxidizing and etching of material lines for use in increasing or de...

Source/drain parasitic capacitance reduction in FinFET-based semico...

Programmable via devices with metal/semiconductor via links and fab...

Three-dimensional finFET transistor with portion(s) of the fin chan...

Patents Applicationslast 30 patents

FINFET WITH MULTILAYER FINS FOR MULTI-VALUE LOGIC (MVL) APPLICATION...

SEMICONDUCTOR DEVICE WITH RECESSED SOURCE/DRAIN CONTACTS AND A GATE...

METHOD OF FORMING GATE-ALL-AROUND (GAA) FINFET AND GAA FINFET FORME...

SEMICONDUCTOR DEVICE WITH RECESSED SOURCE/DRAIN CONTACTS AND A GATE...

METHOD, APPARATUS AND SYSTEM FOR IMPROVED PERFORMANCE USING TALL FI...

SELECTIVE SAC CAPPING ON FIN FIELD EFFECT TRANSISTOR STRUCTURES AND...

DEVICES WITH CONTACT-TO-GATE SHORTING THROUGH CONDUCTIVE PATHS BETW...

SOURCE/DRAIN PARASITIC CAPACITANCE REDUCTION IN FINFET-BASED SEMICO...

GATE STRUCTURES WITH LOW RESISTANCE

NOVEL OTPROM FOR POST-PROCESS PROGRAMMING USING SELECTIVE BREAKDOWN

SELF-ALIGNED BACK-PLANE AND WELL CONTACTS FOR FULLY DEPLETED SILICO...

SEMICONDUCTOR FIN LOOP FOR USE WITH DIFFUSION BREAK

SOURCE/DRAIN PARASITIC CAPACITANCE REDUCTION IN FINFET-BASED SEMICO...

SELECTIVE SAC CAPPING ON FIN FIELD EFFECT TRANSISTOR STRUCTURES AND...

INTEGRATED CIRCUIT STRUCTURE WITHOUT GATE CONTACT AND METHOD OF FOR...

DEVICES WITH CONTACT-TO-GATE SHORTING THROUGH CONDUCTIVE PATHS BETW...

TRANSISTOR STRUCTURE HAVING N-TYPE AND P-TYPE ELONGATED REGIONS INT...

PROGRAMMABLE VIA DEVICES WITH METAL/SEMICONDUCTOR VIA LINKS AND FAB...

METHODS FOR CROSSED-FINS FINFET DEVICE FOR SENSING AND MEASURING MA...

DIODES AND FABRICATION METHODS THEREOF

FINFET CIRCUIT STRUCTURES WITH VERTICALLY SPACED TRANSISTORS AND FA...

CIRCUIT STRUCTURES WITH VERTICALLY SPACED TRANSISTORS AND FABRICATI...

APPARATUS AND METHOD OF ADJUSTING WORK-FUNCTION METAL THICKNESS TO...

METAL-INSULATOR-METAL CAPACITOR AND METHODS OF FABRICATION

METHOD AND APPARATUS FOR REDUCING THRESHOLD VOLTAGE MISMATCH IN AN...

DEVICES AND METHODS FOR DYNAMICALLY TUNABLE BIASING TO BACKPLATES A...

PROTECTING, OXIDIZING, AND ETCHING OF MATERIAL LINES FOR USE IN INC...

OXIDIZING AND ETCHING OF MATERIAL LINES FOR USE IN INCREASING OR DE...

FINFET WITH ISOLATED SOURCE AND DRAIN

STRESS MEMORIZATION AND DEFECT SUPPRESSION TECHNIQUES FOR NMOS TRAN...