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Ming-Cheng Chang
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Dresden, DE
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Patents Grants
last 30 patents
Information
Patent Grant
Extended-drain field-effect transistors including a floating gate
Patent number
11,127,860
Issue date
Sep 21, 2021
GLOBALFOUNDRIES U.S. INC.
Ming-Cheng Chang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Deep fence isolation for logic cells
Patent number
10,593,674
Issue date
Mar 17, 2020
GLOBALFOUNDRIES Inc.
Ming-Cheng Chang
H03 - BASIC ELECTRONIC CIRCUITRY
Information
Patent Grant
Dual-depth STI cavity extension and method of production thereof
Patent number
10,559,490
Issue date
Feb 11, 2020
GLOBALFOUNDRIES Inc.
Elliot John Smith
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
FinFET SRAM layout and method of making the same
Patent number
10,504,906
Issue date
Dec 10, 2019
GLOBALFOUNDRIES Inc.
Ming-Cheng Chang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
FinFET device with enlarged channel regions
Patent number
10,134,730
Issue date
Nov 20, 2018
GLOBALFOUNDRIES Inc.
Ming-Cheng Chang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming a capacitor structure and capacitor structure
Patent number
9,941,348
Issue date
Apr 10, 2018
GLOBALFOUNDRIES Inc.
Ran Yan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
FinFET device with enlarged channel regions
Patent number
9,748,236
Issue date
Aug 29, 2017
GLOBALFOUNDRIES Inc.
Ming-Cheng Chang
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
EXTENDED-DRAIN FIELD-EFFECT TRANSISTORS INCLUDING A FLOATING GATE
Publication number
20210083095
Publication date
Mar 18, 2021
GLOBALFOUNDRIES U.S. Inc.
Ming-Cheng Chang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
DEEP FENCE ISOLATION FOR LOGIC CELLS
Publication number
20200083223
Publication date
Mar 12, 2020
GLOBALFOUNDRIES INC.
Ming-Cheng CHANG
H03 - BASIC ELECTRONIC CIRCUITRY
Information
Patent Application
DUAL-DEPTH STI CAVITY EXTENSION AND METHOD OF PRODUCTION THEREOF
Publication number
20200066573
Publication date
Feb 27, 2020
GLOBALFOUNDRIES INC.
Elliot John SMITH
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE INCLUDING FDSOI TRANSISTORS WITH COMPACT GROUN...
Publication number
20190312038
Publication date
Oct 10, 2019
GLOBALFOUNDRIES INC.
Nigel Chan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FINFET SRAM LAYOUT AND METHOD OF MAKING THE SAME
Publication number
20190172832
Publication date
Jun 6, 2019
GLOBALFOUNDRIES INC.
Ming-Cheng Chang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
LATERALLY DIFFUSED FIELD EFFECT TRANSISTOR IN SOI CONFIGURATION
Publication number
20180366579
Publication date
Dec 20, 2018
GLOBALFOUNDRIES INC.
Ran Yan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD OF FORMING A CAPACITOR STRUCTURE AND CAPACITOR STRUCTURE
Publication number
20170317161
Publication date
Nov 2, 2017
GLOBALFOUNDRIES INC.
Ran Yan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FINFET DEVICE WITH ENLARGED CHANNEL REGIONS
Publication number
20170309628
Publication date
Oct 26, 2017
GLOBALFOUNDRIES INC.
Ming-Cheng Chang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FINFET DEVICE WITH ENLARGED CHANNEL REGIONS
Publication number
20170250181
Publication date
Aug 31, 2017
GLOBALFOUNDRIES INC.
Ming-Cheng Chang
H01 - BASIC ELECTRIC ELEMENTS