Ming-Cheng Chang

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Extended-drain field-effect transistors including a floating gate
- Patent number 11,127,860
- Issue date Sep 21, 2021
- GLOBALFOUNDRIES U.S. INC.
- Ming-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep fence isolation for logic cells
- Patent number 10,593,674
- Issue date Mar 17, 2020
- GLOBALFOUNDRIES Inc.
- Ming-Cheng Chang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Dual-depth STI cavity extension and method of production thereof
- Patent number 10,559,490
- Issue date Feb 11, 2020
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET SRAM layout and method of making the same
- Patent number 10,504,906
- Issue date Dec 10, 2019
- GLOBALFOUNDRIES Inc.
- Ming-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with enlarged channel regions
- Patent number 10,134,730
- Issue date Nov 20, 2018
- GLOBALFOUNDRIES Inc.
- Ming-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a capacitor structure and capacitor structure
- Patent number 9,941,348
- Issue date Apr 10, 2018
- GLOBALFOUNDRIES Inc.
- Ran Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with enlarged channel regions
- Patent number 9,748,236
- Issue date Aug 29, 2017
- GLOBALFOUNDRIES Inc.
- Ming-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EXTENDED DRAIN METAL OXIDE SEMICONDUCTOR (EDMOS) FIELD EFFECT TRANS...
- Publication number 20250234585
- Publication date Jul 17, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Ming-cheng CHANG
Information Patent Application
EXTENDED-DRAIN FIELD-EFFECT TRANSISTORS INCLUDING A FLOATING GATE
- Publication number 20210083095
- Publication date Mar 18, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Ming-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP FENCE ISOLATION FOR LOGIC CELLS
- Publication number 20200083223
- Publication date Mar 12, 2020
- GLOBALFOUNDRIES INC.
- Ming-Cheng CHANG
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
DUAL-DEPTH STI CAVITY EXTENSION AND METHOD OF PRODUCTION THEREOF
- Publication number 20200066573
- Publication date Feb 27, 2020
- GLOBALFOUNDRIES INC.
- Elliot John SMITH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING FDSOI TRANSISTORS WITH COMPACT GROUN...
- Publication number 20190312038
- Publication date Oct 10, 2019
- GLOBALFOUNDRIES INC.
- Nigel Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET SRAM LAYOUT AND METHOD OF MAKING THE SAME
- Publication number 20190172832
- Publication date Jun 6, 2019
- GLOBALFOUNDRIES INC.
- Ming-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED FIELD EFFECT TRANSISTOR IN SOI CONFIGURATION
- Publication number 20180366579
- Publication date Dec 20, 2018
- GLOBALFOUNDRIES INC.
- Ran Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A CAPACITOR STRUCTURE AND CAPACITOR STRUCTURE
- Publication number 20170317161
- Publication date Nov 2, 2017
- GLOBALFOUNDRIES INC.
- Ran Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE WITH ENLARGED CHANNEL REGIONS
- Publication number 20170309628
- Publication date Oct 26, 2017
- GLOBALFOUNDRIES INC.
- Ming-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE WITH ENLARGED CHANNEL REGIONS
- Publication number 20170250181
- Publication date Aug 31, 2017
- GLOBALFOUNDRIES INC.
- Ming-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS

Ming-Cheng Chang

Person

Patents Grantslast 30 patents

Extended-drain field-effect transistors including a floating gate

Deep fence isolation for logic cells

Dual-depth STI cavity extension and method of production thereof

FinFET SRAM layout and method of making the same

FinFET device with enlarged channel regions

Method of forming a capacitor structure and capacitor structure

FinFET device with enlarged channel regions

Patents Applicationslast 30 patents

EXTENDED DRAIN METAL OXIDE SEMICONDUCTOR (EDMOS) FIELD EFFECT TRANS...

EXTENDED-DRAIN FIELD-EFFECT TRANSISTORS INCLUDING A FLOATING GATE

DEEP FENCE ISOLATION FOR LOGIC CELLS

DUAL-DEPTH STI CAVITY EXTENSION AND METHOD OF PRODUCTION THEREOF

SEMICONDUCTOR DEVICE INCLUDING FDSOI TRANSISTORS WITH COMPACT GROUN...

FINFET SRAM LAYOUT AND METHOD OF MAKING THE SAME

LATERALLY DIFFUSED FIELD EFFECT TRANSISTOR IN SOI CONFIGURATION

METHOD OF FORMING A CAPACITOR STRUCTURE AND CAPACITOR STRUCTURE

FINFET DEVICE WITH ENLARGED CHANNEL REGIONS

FINFET DEVICE WITH ENLARGED CHANNEL REGIONS