Ming-Chien Wen

Person

Hsin-Chu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
SRAM structure and method for forming the same
- Patent number 12,156,394
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
Information Patent Grant
Profile control of a gap fill structure
- Patent number 12,057,349
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Yao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric spacer to prevent contacting shorting
- Patent number 12,051,735
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ting-Gang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for fringing capacitance control
- Patent number 12,020,989
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Keng-Yao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for fringing capacitance control
- Patent number 12,009,266
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Keng-Yao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch stop layer between substrate and isolation structure
- Patent number 11,948,842
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having nanosheet transistor and methods of fab...
- Patent number 11,916,110
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Ching Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having cut gate dielectric
- Patent number 11,901,237
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Yun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local gate height tuning by cmp and dummy gate design
- Patent number 11,817,354
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate process for reducing transistor spacing
- Patent number 11,721,544
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local gate height tuning by CMP and dummy gate design
- Patent number 11,508,623
- Issue date Nov 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device
- Patent number 11,437,278
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Yun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having nanosheet transistor and methods of fab...
- Patent number 11,387,322
- Issue date Jul 12, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Ching Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric spacer to prevent contacting shorting
- Patent number 11,342,444
- Issue date May 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ting-Gang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM structure and method for forming the same
- Patent number 11,315,933
- Issue date Apr 26, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate process for reducing transistor spacing
- Patent number 11,239,072
- Issue date Feb 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Profile control of a gap fill structure
- Patent number 11,177,180
- Issue date Nov 16, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for alignment marks
- Patent number 11,121,128
- Issue date Sep 14, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric spacer to prevent contacting shorting
- Patent number 11,107,902
- Issue date Aug 31, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ting-Gang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch stop layer between substrate and isolation structure
- Patent number 10,991,628
- Issue date Apr 27, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch stop layer between substrate and isolation structure
- Patent number 10,978,351
- Issue date Apr 13, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Creating devices with multiple threshold voltages by cut-metal-gate...
- Patent number 10,868,003
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a metal gate and formation method thereof
- Patent number 10,741,450
- Issue date Aug 11, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Yun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for alignment marks
- Patent number 10,665,585
- Issue date May 26, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate process for reducing transistor spacing
- Patent number 10,651,030
- Issue date May 12, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Creating devices with multiple threshold voltage by cut-metal-gate...
- Patent number 10,461,078
- Issue date Oct 29, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate process for reducing transistor spacing
- Patent number 10,319,581
- Issue date Jun 11, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for overlay marks
- Patent number 10,163,738
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsien-Cheng Wang
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Structure and method for overlay marks
- Patent number 9,543,406
- Issue date Jan 10, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsien-Cheng Wang
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Cross quadrupole double lithography method using two complementary...
- Patent number 9,280,041
- Issue date Mar 8, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsien-Cheng Wang
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY

Patents Applicationslast 30 patents

Information Patent Application
SRAM STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240397690
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- MING-CHANG WEN
Information Patent Application
PROFILE CONTROL OF A GAP FILL STRUCTURE
- Publication number 20240363423
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC SPACER TO PREVENT CONTACTING SHORTING
- Publication number 20240347623
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ting-Gang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE FOR FRINGING CAPACITANCE CONTROL
- Publication number 20240304497
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Keng-Yao CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FAB...
- Publication number 20240250125
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Ching WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC
- Publication number 20240213097
- Publication date Jun 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chang-Yun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING ISOLATION STRUCTURE FORMED OF LOW-K DIE...
- Publication number 20240030281
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Szu-Hua Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Local Gate Height Tuning by CMP and Dummy Gate Design
- Publication number 20230386927
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUT METAL GATE PROCESS FOR REDUCING TRANSISTOR SPACING
- Publication number 20230377873
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT SIDEWALL SPACERS
- Publication number 20230361199
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chang-Ta Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH MODIFIED SPACER AND METHOD FOR FORMING...
- Publication number 20230187535
- Publication date Jun 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Local Gate Height Tuning by Cmp And Dummy Gate Design
- Publication number 20220384262
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE FOR FRINGING CAPACITANCE CONTROL
- Publication number 20220367287
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Keng-Yao CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC
- Publication number 20220359302
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chang-Yun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FAB...
- Publication number 20220352319
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Ching WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dielectric Spacer to Prevent Contacting Shorting
- Publication number 20220285529
- Publication date Sep 8, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ting-Gang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20220254789
- Publication date Aug 11, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- MING-CHANG WEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUT METAL GATE PROCESS FOR REDUCING TRANSISTOR SPACING
- Publication number 20220157595
- Publication date May 19, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FAB...
- Publication number 20220093743
- Publication date Mar 24, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Ching WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROFILE CONTROL OF A GAP FILL STRUCTURE
- Publication number 20220077001
- Publication date Mar 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROFILE CONTROL OF A GAP FILL STRUCTURE
- Publication number 20210249309
- Publication date Aug 12, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etch Stop Layer Between Substrate and Isolation Structure
- Publication number 20210242090
- Publication date Aug 5, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Local Gate Height Tuning by Cmp And Dummy Gate Design
- Publication number 20210202320
- Publication date Jul 1, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE FOR FRINGING CAPACITANCE CONTROL
- Publication number 20210193530
- Publication date Jun 24, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Keng-Yao CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE
- Publication number 20200365465
- Publication date Nov 19, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chang-Yun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for Alignment Marks
- Publication number 20200286887
- Publication date Sep 10, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cut Metal Gate Process for Reducing Transistor Spacing
- Publication number 20200251325
- Publication date Aug 6, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etch Stop Layer Between Substrate and Isolation Structure
- Publication number 20200091008
- Publication date Mar 19, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Creating Devices with Multiple Threshold Voltages by Cut-Metal-Gate...
- Publication number 20200058650
- Publication date Feb 20, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dielectric Spacer to Prevent Contacting Shorting
- Publication number 20200013875
- Publication date Jan 9, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ting-Gang Chen
- H01 - BASIC ELECTRIC ELEMENTS

Ming-Chien Wen

Person

Patents Grantslast 30 patents

SRAM structure and method for forming the same

Profile control of a gap fill structure

Dielectric spacer to prevent contacting shorting

Structure for fringing capacitance control

Structure for fringing capacitance control

Etch stop layer between substrate and isolation structure

Semiconductor device having nanosheet transistor and methods of fab...

Semiconductor device having cut gate dielectric

Local gate height tuning by cmp and dummy gate design

Cut metal gate process for reducing transistor spacing

Local gate height tuning by CMP and dummy gate design

Method for forming semiconductor device

Semiconductor device having nanosheet transistor and methods of fab...

Dielectric spacer to prevent contacting shorting

SRAM structure and method for forming the same

Cut metal gate process for reducing transistor spacing

Profile control of a gap fill structure

Structure and method for alignment marks

Dielectric spacer to prevent contacting shorting

Etch stop layer between substrate and isolation structure

Etch stop layer between substrate and isolation structure

Creating devices with multiple threshold voltages by cut-metal-gate...

Semiconductor device having a metal gate and formation method thereof

Structure and method for alignment marks

Cut metal gate process for reducing transistor spacing

Creating devices with multiple threshold voltage by cut-metal-gate...

Cut metal gate process for reducing transistor spacing

Structure and method for overlay marks

Structure and method for overlay marks

Cross quadrupole double lithography method using two complementary...

Patents Applicationslast 30 patents

SRAM STRUCTURE AND METHOD FOR FORMING THE SAME

PROFILE CONTROL OF A GAP FILL STRUCTURE

DIELECTRIC SPACER TO PREVENT CONTACTING SHORTING

STRUCTURE FOR FRINGING CAPACITANCE CONTROL

SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FAB...

SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC

SEMICONDUCTOR DEVICE HAVING ISOLATION STRUCTURE FORMED OF LOW-K DIE...

Local Gate Height Tuning by CMP and Dummy Gate Design

CUT METAL GATE PROCESS FOR REDUCING TRANSISTOR SPACING

REPLACEMENT SIDEWALL SPACERS

SEMICONDUCTOR STRUCTURE WITH MODIFIED SPACER AND METHOD FOR FORMING...

Local Gate Height Tuning by Cmp And Dummy Gate Design

STRUCTURE FOR FRINGING CAPACITANCE CONTROL

SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC

SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FAB...

Dielectric Spacer to Prevent Contacting Shorting

SRAM STRUCTURE AND METHOD FOR FORMING THE SAME

CUT METAL GATE PROCESS FOR REDUCING TRANSISTOR SPACING

SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FAB...

PROFILE CONTROL OF A GAP FILL STRUCTURE

PROFILE CONTROL OF A GAP FILL STRUCTURE

Etch Stop Layer Between Substrate and Isolation Structure

Local Gate Height Tuning by Cmp And Dummy Gate Design

STRUCTURE FOR FRINGING CAPACITANCE CONTROL

METHOD FOR FORMING SEMICONDUCTOR DEVICE

Structure and Method for Alignment Marks

Cut Metal Gate Process for Reducing Transistor Spacing

Etch Stop Layer Between Substrate and Isolation Structure

Creating Devices with Multiple Threshold Voltages by Cut-Metal-Gate...

Dielectric Spacer to Prevent Contacting Shorting