Ming-Hsiang Song

Person

Hsin-Chu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Memory device with tunable probabilistic state
- Patent number 12,057,153
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming Yuan Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device
- Patent number 11,968,844
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Min Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Device including integrated electrostatic discharge protection comp...
- Patent number 11,935,885
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tzu-Heng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOT-MRAM cell in high density applications
- Patent number 11,903,326
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming Yuan Song
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM stacks and memory devices
- Patent number 11,862,373
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shy-Jay Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 11,765,984
- Issue date Sep 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Lin Huang
Information Patent Grant
Memory device, operation method of memory device and operation meth...
- Patent number 11,721,376
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device, semiconductor device, and method of fabricating semi...
- Patent number 11,716,859
- Issue date Aug 1, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device including integrated electrostatic discharge protection comp...
- Patent number 11,562,996
- Issue date Jan 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tzu-Heng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device including integrated electrostatic discharge protection comp...
- Patent number 11,557,586
- Issue date Jan 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tzu-Heng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device, method of forming the same, and memory array
- Patent number 11,538,858
- Issue date Dec 27, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Min Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with tunable probabilistic state
- Patent number 11,521,664
- Issue date Dec 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming Yuan Song
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM device having self-aligned shunting layer
- Patent number 11,522,009
- Issue date Dec 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- William J. Gallagher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOT-MRAM cell in high density applications
- Patent number 11,469,371
- Issue date Oct 11, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming Yuan Song
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM stacks, MRAM devices and methods of forming the same
- Patent number 11,456,100
- Issue date Sep 27, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Shy-Jay Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and memory circuit
- Patent number 11,342,015
- Issue date May 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming electrostatic discharge (ESD) testing structure
- Patent number 11,264,374
- Issue date Mar 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Heng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and memory circuit
- Patent number 11,145,347
- Issue date Oct 12, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with a fuse protection circuit
- Patent number 10,991,442
- Issue date Apr 27, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Der Chih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with a fuse protection circuit
- Patent number 10,803,967
- Issue date Oct 13, 2020
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
SCRs with checker board layouts
- Patent number 10,790,274
- Issue date Sep 29, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Ti Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming electrostatic discharge (ESD) testing structure
- Patent number 10,756,082
- Issue date Aug 25, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Heng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device including integrated electrostatic discharge protection comp...
- Patent number 10,741,543
- Issue date Aug 11, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tzu-Heng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with a fuse protection circuit
- Patent number 10,643,726
- Issue date May 5, 2020
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
ESD testing structure, method of using same and method of forming same
- Patent number 10,325,906
- Issue date Jun 18, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Heng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with a fuse protection circuit
- Patent number 10,283,210
- Issue date May 7, 2019
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Der Chih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rotated STI diode on FinFET technology
- Patent number 10,269,986
- Issue date Apr 23, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sun-Jay Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with a fuse protection circuit
- Patent number 10,109,366
- Issue date Oct 23, 2018
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
Fin ESD protection diode and fabrication method thereof
- Patent number 10,096,589
- Issue date Oct 9, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wun-Jie Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection for three dimensional integrated...
- Patent number 9,979,186
- Issue date May 22, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzu-Heng Chang
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER

Patents Applicationslast 30 patents

Information Patent Application
MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20240387090
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shy-Jay Lin
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH TUNABLE PROBABILISTIC STATE
- Publication number 20240363154
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming Yuan Song
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF WRITING AND FORMING MEMORY DEVICE
- Publication number 20240215262
- Publication date Jun 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Min Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20240087786
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shy-Jay Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM DEVICE HAVING SELF-ALIGNED SHUNTING LAYER
- Publication number 20240090237
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- William J. Gallagher
Information Patent Application
MEMORY DEVICE
- Publication number 20230363290
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Lin Huang
Information Patent Application
MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING SEMI...
- Publication number 20230329005
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE INCLUDING INTEGRATED ELECTROSTATIC DISCHARGE PROTECTION COMP...
- Publication number 20230123887
- Publication date Apr 20, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzu-Heng CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH TUNABLE PROBABILISTIC STATE
- Publication number 20230086638
- Publication date Mar 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming Yuan Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM DEVICE HAVING SELF-ALIGNED SHUNTING LAYER
- Publication number 20230076145
- Publication date Mar 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- William J. Gallagher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20230071950
- Publication date Mar 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Min Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING SEMI...
- Publication number 20220367566
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MARM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20220367098
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shy-Jay Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOT-MRAM CELL IN HIGH DENSITY APPLICATIONS
- Publication number 20220359816
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming Yuan Song
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20220285609
- Publication date Sep 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE, METHOD OF FORMING THE SAME, AND MEMORY ARRAY
- Publication number 20220285435
- Publication date Sep 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE, OPERATION METHOD OF MEMORY DEVICE AND OPERATION METH...
- Publication number 20220246189
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND MEMORY CIRCUIT
- Publication number 20220165320
- Publication date May 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
SOT-MRAM CELL IN HIGH DENSITY APPLICATIONS
- Publication number 20210066580
- Publication date Mar 4, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Ming Yuan Song
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH TUNABLE PROBABILISTIC STATE
- Publication number 20210065762
- Publication date Mar 4, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Ming Yuan Song
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM DEVICE HAVING SELF-ALIGNED SHUNTING LAYER
- Publication number 20210036054
- Publication date Feb 4, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- William J. Gallagher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Device with a Fuse Protection Circuit
- Publication number 20200402599
- Publication date Dec 24, 2020
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF FORMING ELECTROSTATIC DISCHARGE (ESD) TESTING STRUCTURE
- Publication number 20200381419
- Publication date Dec 3, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Heng CHANG
- G01 - MEASURING TESTING
Information Patent Application
DEVICE INCLUDING INTEGRATED ELECTROSTATIC DISCHARGE PROTECTION COMP...
- Publication number 20200365580
- Publication date Nov 19, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzu-Heng CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STACKS, MEMORY DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20200365308
- Publication date Nov 19, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shy-Jay Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE INCLUDING INTEGRATED ELECTROSTATIC DISCHARGE PROTECTION COMP...
- Publication number 20200365579
- Publication date Nov 19, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzu-Heng CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Device with a Fuse Protection Circuit
- Publication number 20200227126
- Publication date Jul 16, 2020
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF FORMING ELECTROSTATIC DISCHARGE (ESD) TESTING STRUCTURE
- Publication number 20190304967
- Publication date Oct 3, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Heng CHANG
- G01 - MEASURING TESTING
Information Patent Application
Memory Device with a Fuse Protection Circuit
- Publication number 20190252032
- Publication date Aug 15, 2019
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE WITH ESD PROTECTION
- Publication number 20190164952
- Publication date May 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzu-Heng CHANG
- H01 - BASIC ELECTRIC ELEMENTS

Ming-Hsiang Song

Person

Patents Grantslast 30 patents

Memory device with tunable probabilistic state

Memory device

Device including integrated electrostatic discharge protection comp...

SOT-MRAM cell in high density applications

MRAM stacks and memory devices

Memory device

Memory device, operation method of memory device and operation meth...

Memory device, semiconductor device, and method of fabricating semi...

Device including integrated electrostatic discharge protection comp...

Device including integrated electrostatic discharge protection comp...

Memory device, method of forming the same, and memory array

Memory device with tunable probabilistic state

MRAM device having self-aligned shunting layer

SOT-MRAM cell in high density applications

MRAM stacks, MRAM devices and methods of forming the same

Memory device and memory circuit

Method of forming electrostatic discharge (ESD) testing structure

Memory device and memory circuit

Memory device with a fuse protection circuit

Memory device with a fuse protection circuit

SCRs with checker board layouts

Method of forming electrostatic discharge (ESD) testing structure

Device including integrated electrostatic discharge protection comp...

Memory device with a fuse protection circuit

ESD testing structure, method of using same and method of forming same

Memory device with a fuse protection circuit

Rotated STI diode on FinFET technology

Memory device with a fuse protection circuit

Fin ESD protection diode and fabrication method thereof

Electrostatic discharge protection for three dimensional integrated...

Patents Applicationslast 30 patents

MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME

MEMORY DEVICE WITH TUNABLE PROBABILISTIC STATE

METHODS OF WRITING AND FORMING MEMORY DEVICE

MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME

MRAM DEVICE HAVING SELF-ALIGNED SHUNTING LAYER

MEMORY DEVICE

MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING SEMI...

DEVICE INCLUDING INTEGRATED ELECTROSTATIC DISCHARGE PROTECTION COMP...

MEMORY DEVICE WITH TUNABLE PROBABILISTIC STATE

MRAM DEVICE HAVING SELF-ALIGNED SHUNTING LAYER

MEMORY DEVICE

MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING SEMI...

MARM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME

SOT-MRAM CELL IN HIGH DENSITY APPLICATIONS

MEMORY DEVICE

MEMORY DEVICE, METHOD OF FORMING THE SAME, AND MEMORY ARRAY

MEMORY DEVICE, OPERATION METHOD OF MEMORY DEVICE AND OPERATION METH...

MEMORY DEVICE AND MEMORY CIRCUIT

SOT-MRAM CELL IN HIGH DENSITY APPLICATIONS

MEMORY DEVICE WITH TUNABLE PROBABILISTIC STATE

MRAM DEVICE HAVING SELF-ALIGNED SHUNTING LAYER

Memory Device with a Fuse Protection Circuit

METHOD OF FORMING ELECTROSTATIC DISCHARGE (ESD) TESTING STRUCTURE

DEVICE INCLUDING INTEGRATED ELECTROSTATIC DISCHARGE PROTECTION COMP...

MEMORY STACKS, MEMORY DEVICES AND METHODS OF FORMING THE SAME

DEVICE INCLUDING INTEGRATED ELECTROSTATIC DISCHARGE PROTECTION COMP...

Memory Device with a Fuse Protection Circuit

METHOD OF FORMING ELECTROSTATIC DISCHARGE (ESD) TESTING STRUCTURE

Memory Device with a Fuse Protection Circuit

DEVICE WITH ESD PROTECTION