Ming-Jhe Sie

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Air spacer and method of forming same
- Patent number 12,107,149
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Jhe Sie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor with void and method of forming the same
- Patent number 12,068,398
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsu Ming Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air spacers around contact plugs and method forming same
- Patent number 12,015,071
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,996,466
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructure field-effect transistor device and method of forming
- Patent number 11,961,919
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,823,958
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor with void and method of forming the same
- Patent number 11,664,444
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsu Ming Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air spacer and method of forming same
- Patent number 11,652,155
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Jhe Sie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air spacers around contact plugs and method forming same
- Patent number 11,355,616
- Issue date Jun 7, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air spacer and method of forming same
- Patent number 11,349,014
- Issue date May 31, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Jhe Sie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,329,140
- Issue date May 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructure field-effect transistor device and method of forming
- Patent number 11,282,967
- Issue date Mar 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,069,579
- Issue date Jul 20, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
AIR SPACER AND METHOD OF FORMING SAME
- Publication number 20240379820
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Jhe Sie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor With Void and Method of Forming The Same
- Publication number 20240371980
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsu Ming Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR SPACERS AROUND CONTACT PLUGS AND METHOD FORMING SAME
- Publication number 20240297235
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240290869
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20230377990
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20230361191
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsu Ming HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor With Void and Method of Forming The Same
- Publication number 20230268427
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsu Ming Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air Spacer and Method of Forming Same
- Publication number 20230253479
- Publication date Aug 10, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Jhe Sie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air Spacers Around Contact Plugs and Method Forming Same
- Publication number 20220310820
- Publication date Sep 29, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air Spacer and Method of Forming Same
- Publication number 20220285530
- Publication date Sep 8, 2022
- Taiwan Semiconductor Manufacturing Co, LTD.
- Ming-Jhe Sie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20220262920
- Publication date Aug 18, 2022
- Taiwan Semiconductor Manufactuing Co., Ltd.
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanostructure Field-Effect Transistor Device and Method of Forming
- Publication number 20220209023
- Publication date Jun 30, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air Spacer and Method of Forming Same
- Publication number 20210408266
- Publication date Dec 30, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Jhe Sie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20210376114
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsu Ming Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20210351084
- Publication date Nov 11, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20210226033
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSTRUCTURE FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING
- Publication number 20210202756
- Publication date Jul 1, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air Spacers Around Contact Plugs and Method Forming Same
- Publication number 20210134973
- Publication date May 6, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20200126868
- Publication date Apr 23, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS

Ming-Jhe Sie

Person

Patents Grantslast 30 patents

Air spacer and method of forming same

Fin field-effect transistor with void and method of forming the same

Air spacers around contact plugs and method forming same

Semiconductor device and method of manufacture

Nanostructure field-effect transistor device and method of forming

Semiconductor device and method

Fin field-effect transistor with void and method of forming the same

Air spacer and method of forming same

Air spacers around contact plugs and method forming same

Air spacer and method of forming same

Semiconductor device and method of manufacture

Nanostructure field-effect transistor device and method of forming

Semiconductor device and method

Patents Applicationslast 30 patents

AIR SPACER AND METHOD OF FORMING SAME

Fin Field-Effect Transistor With Void and Method of Forming The Same

AIR SPACERS AROUND CONTACT PLUGS AND METHOD FORMING SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

Fin Field-Effect Transistor With Void and Method of Forming The Same

Air Spacer and Method of Forming Same

Air Spacers Around Contact Plugs and Method Forming Same

Air Spacer and Method of Forming Same

Semiconductor Device and Method of Manufacture

Nanostructure Field-Effect Transistor Device and Method of Forming

Air Spacer and Method of Forming Same

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD

Semiconductor Device and Method of Manufacture

NANOSTRUCTURE FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING

Air Spacers Around Contact Plugs and Method Forming Same

Semiconductor Device and Method