Ming LI

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor devices and methods of forming a transistor device
- Patent number 11,282,953
- Issue date Mar 22, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual gate LDMOS and a process of forming thereof
- Patent number 10,424,655
- Issue date Sep 24, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VDMOS transistors, BCD devices including VDMOS transistors, and met...
- Patent number 10,032,766
- Issue date Jul 24, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RC-stacked MOSFET circuit for high voltage (HV) electrostatic disch...
- Patent number 9,870,939
- Issue date Jan 16, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Handoko Linewih
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Isolation scheme for high voltage device
- Patent number 9,673,084
- Issue date Jun 6, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection circuit
- Patent number 9,196,719
- Issue date Nov 24, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Da-Wei Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optically transmissive key switch mechanism for display-capable key...
- Patent number 9,087,659
- Issue date Jul 21, 2015
- Razer (Asia-Pacific) Pte Ltd
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection circuit
- Patent number 8,878,297
- Issue date Nov 4, 2014
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Da-Wei Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection circuit
- Patent number 8,853,783
- Issue date Oct 7, 2014
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Da-Wei Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit system employing an elevated drain
- Patent number 7,951,680
- Issue date May 31, 2011
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Guowei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal robust semiconductor device using HfN as metal gate electro...
- Patent number 7,514,360
- Issue date Apr 7, 2009
- Hong Yu Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier source/drain n-mosfet using ytterbium silicide
- Patent number 7,504,328
- Issue date Mar 17, 2009
- National University of Singapore
- Shiyang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making resonant tunneling diodes and CMOS backend-process...
- Patent number 7,002,175
- Issue date Feb 21, 2006
- Agency for Science, Technology and Research
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR DEVICES AND METHODS OF FORMING A TRANSISTOR DEVICE
- Publication number 20210320203
- Publication date Oct 14, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ming LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL GATE LDMOS AND A PROCESS OF FORMING THEREOF
- Publication number 20190189779
- Publication date Jun 20, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ming LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VDMOS TRANSISTORS, BCD DEVICES INCLUDING VDMOS TRANSISTORS, AND MET...
- Publication number 20180082997
- Publication date Mar 22, 2018
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF DEVICES
- Publication number 20160322262
- Publication date Nov 3, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ming LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION SCHEME FOR HIGH VOLTAGE DEVICE
- Publication number 20160163583
- Publication date Jun 9, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Kun LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC-STACKED MOSFET CIRCUIT FOR HIGH VOLTAGE (HV) ELECTROSTATIC DISCH...
- Publication number 20160155737
- Publication date Jun 2, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Handoko LINEWIH
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
OPTICALLY TRANSMISSIVE KEY SWITCH MECHANISM FOR DISPLAY-CAPABLE KEY...
- Publication number 20150364276
- Publication date Dec 17, 2015
- Razer (Asia-Pacific) Pte Ltd
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTICALLY TRANSMISSIVE KEY SWITCH MECHANISM FOR DISPLAY-CAPABLE KEY...
- Publication number 20150021155
- Publication date Jan 22, 2015
- Razer (Asia-Pacific) Pte Ltd
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION CIRCUIT
- Publication number 20140264556
- Publication date Sep 18, 2014
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Da-Wei LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION CIRCUIT
- Publication number 20140084366
- Publication date Mar 27, 2014
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Da-Wei LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION CIRCUIT
- Publication number 20130187218
- Publication date Jul 25, 2013
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Da-Wei LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT SYSTEM EMPLOYING AN ELEVATED DRAIN
- Publication number 20100109097
- Publication date May 6, 2010
- Chartered Semiconductor Manufacturing LTD.
- Guowei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky barrier source/drain N-MOSFET using ytterbium silicide
- Publication number 20090179281
- Publication date Jul 16, 2009
- Shiyang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky barrier source/drain N-MOSFET using ytterbium silicide
- Publication number 20090163005
- Publication date Jun 25, 2009
- National University of Singapore
- Shiyang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE ELECTRODE FOR SEMICONDUCTOR DEVICES
- Publication number 20080224236
- Publication date Sep 18, 2008
- National University of Singapore
- Chi Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal gate electrode for semiconductor devices
- Publication number 20050285208
- Publication date Dec 29, 2005
- Chi Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky barrier source/drain N-MOSFET using ytterbium silicide
- Publication number 20050275033
- Publication date Dec 15, 2005
- Shiyang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thermal robust semiconductor device using HfN as metal gate electro...
- Publication number 20050205947
- Publication date Sep 22, 2005
- National University of Singapore
- Hong Yu Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS compatible low band offset double barrier resonant tunneling d...
- Publication number 20050056827
- Publication date Mar 17, 2005
- Agency For Science, Technology and Research
- Ming Fu Li
- G11 - INFORMATION STORAGE
Information Patent Application
Method of fabricating metal-insulator-metal capacitor (MIM) using l...
- Publication number 20040245602
- Publication date Dec 9, 2004
- Sun Jung Kim
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Transistor devices and methods of forming a transistor device

Dual gate LDMOS and a process of forming thereof

VDMOS transistors, BCD devices including VDMOS transistors, and met...

RC-stacked MOSFET circuit for high voltage (HV) electrostatic disch...

Isolation scheme for high voltage device

ESD protection circuit

Optically transmissive key switch mechanism for display-capable key...

ESD protection circuit

ESD protection circuit

Integrated circuit system employing an elevated drain

Thermal robust semiconductor device using HfN as metal gate electro...

Schottky barrier source/drain n-mosfet using ytterbium silicide

Method of making resonant tunneling diodes and CMOS backend-process...

Patents Applicationslast 30 patents

TRANSISTOR DEVICES AND METHODS OF FORMING A TRANSISTOR DEVICE

DUAL GATE LDMOS AND A PROCESS OF FORMING THEREOF

VDMOS TRANSISTORS, BCD DEVICES INCLUDING VDMOS TRANSISTORS, AND MET...

INTEGRATION OF DEVICES

ISOLATION SCHEME FOR HIGH VOLTAGE DEVICE

RC-STACKED MOSFET CIRCUIT FOR HIGH VOLTAGE (HV) ELECTROSTATIC DISCH...

OPTICALLY TRANSMISSIVE KEY SWITCH MECHANISM FOR DISPLAY-CAPABLE KEY...

OPTICALLY TRANSMISSIVE KEY SWITCH MECHANISM FOR DISPLAY-CAPABLE KEY...

ESD PROTECTION CIRCUIT

ESD PROTECTION CIRCUIT

ESD PROTECTION CIRCUIT

INTEGRATED CIRCUIT SYSTEM EMPLOYING AN ELEVATED DRAIN

Schottky barrier source/drain N-MOSFET using ytterbium silicide

Schottky barrier source/drain N-MOSFET using ytterbium silicide

METAL GATE ELECTRODE FOR SEMICONDUCTOR DEVICES

Metal gate electrode for semiconductor devices

Schottky barrier source/drain N-MOSFET using ytterbium silicide

Thermal robust semiconductor device using HfN as metal gate electro...

CMOS compatible low band offset double barrier resonant tunneling d...

Method of fabricating metal-insulator-metal capacitor (MIM) using l...