Ming Wang

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 11,825,656
- Issue date Nov 21, 2023
- Yangtze Memory Technologies Co., Ltd.
- Yali Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D NAND memory device with select gate cut
- Patent number 11,430,811
- Issue date Aug 30, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yali Song
- G11 - INFORMATION STORAGE
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 11,404,441
- Issue date Aug 2, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yali Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device programming with reduced disturbance
- Patent number 11,062,782
- Issue date Jul 13, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ming Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 10,950,623
- Issue date Mar 16, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yali Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device programming with reduced disturbance
- Patent number 10,892,023
- Issue date Jan 12, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programming of memory cells in three-dimensional memory devices
- Patent number 10,600,490
- Issue date Mar 24, 2020
- Yangtze Memory Technologies Co., Ltd.
- Hongtao Liu
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Novel 3D NAND Memory Device And Method of Forming The Same
- Publication number 20240090223
- Publication date Mar 14, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yali SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20220328523
- Publication date Oct 13, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yali SONG
- G11 - INFORMATION STORAGE
Information Patent Application
NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20210143179
- Publication date May 13, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yali SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20210143180
- Publication date May 13, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yali SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE PROGRAMMING WITH REDUCED DISTURBANCE
- Publication number 20210090671
- Publication date Mar 25, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Ming Wang
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE PROGRAMMING WITH REDUCED DISTURBANCE
- Publication number 20200312413
- Publication date Oct 1, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20200185408
- Publication date Jun 11, 2020
- Yangtze Memory Technologies Co., Ltd.
- Yali SONG
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING OF MEMORY CELLS IN THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20200075102
- Publication date Mar 5, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Hongtao Liu
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

3D NAND memory device and method of forming the same

3D NAND memory device with select gate cut

3D NAND memory device and method of forming the same

Three-dimensional memory device programming with reduced disturbance

3D NAND memory device and method of forming the same

Three-dimensional memory device programming with reduced disturbance

Programming of memory cells in three-dimensional memory devices

Patents Applicationslast 30 patents

Novel 3D NAND Memory Device And Method of Forming The Same

3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE PROGRAMMING WITH REDUCED DISTURBANCE

THREE-DIMENSIONAL MEMORY DEVICE PROGRAMMING WITH REDUCED DISTURBANCE

NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

PROGRAMMING OF MEMORY CELLS IN THREE-DIMENSIONAL MEMORY DEVICES