Ming-Yin Hao

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Multiple channel implantation to form retrograde channel profile an...
- Patent number 6,506,640
- Issue date Jan 14, 2003
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen implantation for reduction of junction capacitance in MOS tr...
- Patent number 6,475,868
- Issue date Nov 5, 2002
- Advanced Micro Devices, Inc.
- Ming Yin Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor processing utilizing UV-nitride removable spacer and...
- Patent number 6,472,283
- Issue date Oct 29, 2002
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser tailoring retrograde channel profile in surfaces
- Patent number 6,444,550
- Issue date Sep 3, 2002
- Advanced Micro Devices, Inc.
- Ming-Yin Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removable spacer technology using ion implantation to augment etch...
- Patent number 6,429,083
- Issue date Aug 6, 2002
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Retrograde well structure formation by nitrogen implantation
- Patent number 6,423,601
- Issue date Jul 23, 2002
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with asymmetric channel dopant profile
- Patent number 6,410,393
- Issue date Jun 25, 2002
- Advanced Micro Devices, Inc.
- Ming-Yin Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making transistor having reduced series resistance
- Patent number 6,372,590
- Issue date Apr 16, 2002
- Advanced Micro Devices, Inc.
- Deepak K. Nayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium retrograde channel doping for improved gate oxide reliability
- Patent number 6,372,582
- Issue date Apr 16, 2002
- Advanced Micro Devices, Inc.
- Richard P. Rouse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removable spacer technology using ion implantation for forming asym...
- Patent number 6,344,396
- Issue date Feb 5, 2002
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS-type transistor processing utilizing UV-nitride removable space...
- Patent number 6,342,423
- Issue date Jan 29, 2002
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 6,316,322
- Issue date Nov 13, 2001
- Advanced Micro Devices, Inc.
- Ming Yin Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual spacer method of forming CMOS transistors with substantially t...
- Patent number 6,306,702
- Issue date Oct 23, 2001
- Advanced Micro Devices, Inc.
- Ming Yin Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of improving MOS device performance by controlling degree of...
- Patent number 6,274,915
- Issue date Aug 14, 2001
- Advanced Micro Devices, Inc.
- Srinath Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for reliable ultrathin oxynitride formation
- Patent number 6,245,689
- Issue date Jun 12, 2001
- Advanced Micro Devices, Inc.
- Ming-Yin Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming retrograde channel profile and shallow LLDD/S-D extensions...
- Patent number 6,194,259
- Issue date Feb 27, 2001
- Advanced Micro Devices, Inc.
- Deepak K. Nayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimization of line width variation in photolithography
- Patent number 6,187,687
- Issue date Feb 13, 2001
- Advanced Micro Devices, Inc.
- Marina V. Plat
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Preventing boron penetration through thin gate oxide of P-channel d...
- Patent number 6,051,460
- Issue date Apr 18, 2000
- Advanced Micro Devices, Inc.
- Deepak K. Nayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preventing boron penetration through thin gate oxide of P-channel d...
- Patent number 5,973,370
- Issue date Oct 26, 1999
- Advanced Micro Devices, Inc.
- Deepak K. Nayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrathin oxynitride structure and process for VLSI applications
- Patent number 5,939,763
- Issue date Aug 17, 1999
- Advanced Micro Devices, Inc.
- Ming-Yin Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to optimize p-channel CMOS ICs using Q.sub.bd as a monitor o...
- Patent number 5,817,536
- Issue date Oct 6, 1998
- Advanced Micro Devices, Inc.
- Deepak Kumar Nayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hot-carrier reliability in submicron MOS devices by oxynitridation
- Patent number 5,786,254
- Issue date Jul 28, 1998
- Advanced Micro Devices, Inc.
- Ming-yin Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and circuit for detecting boron ("B") in a semiconductor dev...
- Patent number 5,757,204
- Issue date May 26, 1998
- Advanced Micro Devices, Inc.
- Deepak Kumar Nayak
- G01 - MEASURING TESTING

Ming-Yin Hao

Person

Patents Grantslast 30 patents

Multiple channel implantation to form retrograde channel profile an...

Oxygen implantation for reduction of junction capacitance in MOS tr...

MOS transistor processing utilizing UV-nitride removable spacer and...

Laser tailoring retrograde channel profile in surfaces

Removable spacer technology using ion implantation to augment etch...

Retrograde well structure formation by nitrogen implantation

Semiconductor device with asymmetric channel dopant profile

Method for making transistor having reduced series resistance

Indium retrograde channel doping for improved gate oxide reliability

Removable spacer technology using ion implantation for forming asym...

MOS-type transistor processing utilizing UV-nitride removable space...

Method for fabricating semiconductor device

Dual spacer method of forming CMOS transistors with substantially t...

Method of improving MOS device performance by controlling degree of...

Process for reliable ultrathin oxynitride formation

Forming retrograde channel profile and shallow LLDD/S-D extensions...

Minimization of line width variation in photolithography

Preventing boron penetration through thin gate oxide of P-channel d...

Preventing boron penetration through thin gate oxide of P-channel d...

Ultrathin oxynitride structure and process for VLSI applications

Method to optimize p-channel CMOS ICs using Q.sub.bd as a monitor o...

Hot-carrier reliability in submicron MOS devices by oxynitridation

Method and circuit for detecting boron ("B") in a semiconductor dev...