Ming ZHU

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
System and method for automatic generation of device-based design r...
- Patent number 12,124,787
- Issue date Oct 22, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shu Zhong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Vertical tunneling field-effect transistor cell
- Patent number 11,990,531
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hay-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for vertical tunneling field effect transistor...
- Patent number 11,894,448
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure of a semiconductor device and method of making
- Patent number 11,380,775
- Issue date Jul 5, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for vertical tunneling field effect transistor...
- Patent number 11,101,371
- Issue date Aug 24, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunneling field-effect transistor cell and fabricating the...
- Patent number 11,011,621
- Issue date May 18, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with density-controllable dummy fill strategy for nea...
- Patent number 10,978,510
- Issue date Apr 13, 2021
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Pinghui Li
- G11 - INFORMATION STORAGE
Information Patent Grant
High-K film apparatus and method
- Patent number 10,861,954
- Issue date Dec 8, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of a metal gate structure
- Patent number 10,840,149
- Issue date Nov 17, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for embedding flash memory and logic integration...
- Patent number 10,741,552
- Issue date Aug 11, 2020
- GLOBALFOUNDERS SINGAPORE PTE. LTD.
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor die
- Patent number 10,672,760
- Issue date Jun 2, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure of a semiconductor device
- Patent number 10,553,699
- Issue date Feb 4, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunneling field-effect transistor cell and fabricating the...
- Patent number 10,490,654
- Issue date Nov 26, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunneling field-effect transistor cell and fabricating the...
- Patent number 10,424,652
- Issue date Sep 24, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with memory cells and method for producing the...
- Patent number 10,411,027
- Issue date Sep 10, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Density-controllable dummy fill strategy for near-MRAM periphery an...
- Patent number 10,374,005
- Issue date Aug 6, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Pinghui Li
- G11 - INFORMATION STORAGE
Information Patent Grant
LDMOS transistor structures and integrated circuits including LDMOS...
- Patent number 10,211,336
- Issue date Feb 19, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K film apparatus and method
- Patent number 10,177,238
- Issue date Jan 8, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for embedding flash memory and logic integration...
- Patent number 10,163,901
- Issue date Dec 25, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunneling field-effect transistor cell and fabricating the...
- Patent number 10,164,076
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for statice random access memory device of ver...
- Patent number 10,134,743
- Issue date Nov 20, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded non-volatile memory (NVM) on fully depleted silicon-on-ins...
- Patent number 10,109,638
- Issue date Oct 23, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for vertical tunneling field effect transistor...
- Patent number 10,103,253
- Issue date Oct 16, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming gate structure of a semiconductor device
- Patent number 9,978,853
- Issue date May 22, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for nFET with high k metal gate
- Patent number 9,947,528
- Issue date Apr 17, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and methods for high-K and metal gate slacks
- Patent number 9,865,510
- Issue date Jan 9, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Nien Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for a vertical tunneling field-effect transistor...
- Patent number 9,865,716
- Issue date Jan 9, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunneling field-effect transistor cell and fabricating the...
- Patent number 9,853,125
- Issue date Dec 26, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making structure having a gate stack
- Patent number 9,831,235
- Issue date Nov 28, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits and methods for fabricating integrated circuits...
- Patent number 9,825,185
- Issue date Nov 21, 2017
- GLOBALFOUDNRIES SINGAPORE PTE. LTD.
- Pinghui Li
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR...
- Publication number 20240178303
- Publication date May 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR AUTOMATIC GENERATION OF DEVICE-BASED DESIGN R...
- Publication number 20230144064
- Publication date May 11, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Shu Zhong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Structure and Method for Vertical Tunneling Field Effect Transistor...
- Publication number 20210384327
- Publication date Dec 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Tunneling Field-Effect Transistor Cell and Fabricating the...
- Publication number 20210296471
- Publication date Sep 23, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hay-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE OF A SEMICONDUCTOR DEVICE AND METHOD OF MAKING
- Publication number 20200168721
- Publication date May 28, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Tunneling Field-Effect Transistor Cell and Fabricating the...
- Publication number 20200020788
- Publication date Jan 16, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DENSITY-CONTROLLABLE DUMMY FILL STRATEGY FOR NEAR-MRAM PERIPHERY AN...
- Publication number 20190305041
- Publication date Oct 3, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Pinghui LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DENSITY-CONTROLLABLE DUMMY FILL STRATEGY FOR NEAR-MRAM PERIPHERY AN...
- Publication number 20190206928
- Publication date Jul 4, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Pinghui LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-K Film Apparatus and Method
- Publication number 20190157415
- Publication date May 23, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Tunneling Field-Effect Transistor Cell and Fabricating the...
- Publication number 20190123184
- Publication date Apr 25, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH MEMORY CELLS AND METHOD FOR PRODUCING THE...
- Publication number 20190123059
- Publication date Apr 25, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for Vertical Tunneling Field Effect Transistor...
- Publication number 20190097029
- Publication date Mar 28, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND DEVICE FOR EMBEDDING FLASH MEMORY AND LOGIC INTEGRATION...
- Publication number 20180374850
- Publication date Dec 27, 2018
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ming ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND DEVICE FOR EMBEDDING FLASH MEMORY AND LOGIC INTEGRATION...
- Publication number 20180374849
- Publication date Dec 27, 2018
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ming ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE OF A SEMICONDUCTOR DEVICE
- Publication number 20180277654
- Publication date Sep 27, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Tunneling Field-Effect Transistor Cell and Fabricating the...
- Publication number 20180069096
- Publication date Mar 8, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS TRANSISTOR STRUCTURES AND INTEGRATED CIRCUITS INCLUDING LDMOS...
- Publication number 20180053842
- Publication date Feb 22, 2018
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING GATE STRUCTURE OF A SEMICONDUCTOR DEVICE
- Publication number 20170186853
- Publication date Jun 29, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TUNNELING FIELD-EFFECT TRANSISTOR CELL AND FABRICATING THE...
- Publication number 20170110559
- Publication date Apr 20, 2017
- Taiwan Semiconductor Manufacturing Co., LTD
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETISM-CONTROLLABLE DUMMY STRUCTURES IN MEMORY DEVICE
- Publication number 20170104029
- Publication date Apr 13, 2017
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Pinghui LI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DIE
- Publication number 20170084608
- Publication date Mar 23, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF A METAL GATE STRUCTURE
- Publication number 20170069546
- Publication date Mar 9, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHODS FOR HIGH-K AND METAL GATE SLACKS
- Publication number 20160190018
- Publication date Jun 30, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Nien Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH INACTIVE GATES AND METHODS OF MANUFACTURIN...
- Publication number 20160190012
- Publication date Jun 30, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED GATE REPLACEMENT PROCESS FOR HIGH-K METAL GATE TECHNOLOGY
- Publication number 20160111522
- Publication date Apr 21, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIE
- Publication number 20160093610
- Publication date Mar 31, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH PARTIALLY UNSILICIDED SOURCE/DRAIN
- Publication number 20160087060
- Publication date Mar 24, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TUNNELING FIELD-EFFECT TRANSISTOR CELL AND FABRICATING THE...
- Publication number 20160064524
- Publication date Mar 3, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-K Film Apparatus and Method
- Publication number 20160005832
- Publication date Jan 7, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N/P BOUNDARY EFFECT REDUCTION FOR METAL GATE TRANSISTORS
- Publication number 20150364459
- Publication date Dec 17, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

System and method for automatic generation of device-based design r...

Vertical tunneling field-effect transistor cell

Structure and method for vertical tunneling field effect transistor...

Gate structure of a semiconductor device and method of making

Structure and method for vertical tunneling field effect transistor...

Vertical tunneling field-effect transistor cell and fabricating the...

Memory device with density-controllable dummy fill strategy for nea...

High-K film apparatus and method

Fabrication method of a metal gate structure

Method and device for embedding flash memory and logic integration...

Semiconductor die

Gate structure of a semiconductor device

Vertical tunneling field-effect transistor cell and fabricating the...

Vertical tunneling field-effect transistor cell and fabricating the...

Integrated circuits with memory cells and method for producing the...

Density-controllable dummy fill strategy for near-MRAM periphery an...

LDMOS transistor structures and integrated circuits including LDMOS...

High-K film apparatus and method

Method and device for embedding flash memory and logic integration...

Vertical tunneling field-effect transistor cell and fabricating the...

Structure and method for statice random access memory device of ver...

Embedded non-volatile memory (NVM) on fully depleted silicon-on-ins...

Structure and method for vertical tunneling field effect transistor...

Method of forming gate structure of a semiconductor device

Structure and method for nFET with high k metal gate

Device and methods for high-K and metal gate slacks

System and method for a vertical tunneling field-effect transistor...

Vertical tunneling field-effect transistor cell and fabricating the...

Method of making structure having a gate stack

Integrated circuits and methods for fabricating integrated circuits...

Patents Applicationslast 30 patents

STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR...

SYSTEM AND METHOD FOR AUTOMATIC GENERATION OF DEVICE-BASED DESIGN R...

Structure and Method for Vertical Tunneling Field Effect Transistor...

Vertical Tunneling Field-Effect Transistor Cell and Fabricating the...

GATE STRUCTURE OF A SEMICONDUCTOR DEVICE AND METHOD OF MAKING

Vertical Tunneling Field-Effect Transistor Cell and Fabricating the...

DENSITY-CONTROLLABLE DUMMY FILL STRATEGY FOR NEAR-MRAM PERIPHERY AN...

DENSITY-CONTROLLABLE DUMMY FILL STRATEGY FOR NEAR-MRAM PERIPHERY AN...

High-K Film Apparatus and Method

Vertical Tunneling Field-Effect Transistor Cell and Fabricating the...

INTEGRATED CIRCUITS WITH MEMORY CELLS AND METHOD FOR PRODUCING THE...

Structure and Method for Vertical Tunneling Field Effect Transistor...

METHOD AND DEVICE FOR EMBEDDING FLASH MEMORY AND LOGIC INTEGRATION...

METHOD AND DEVICE FOR EMBEDDING FLASH MEMORY AND LOGIC INTEGRATION...

GATE STRUCTURE OF A SEMICONDUCTOR DEVICE

Vertical Tunneling Field-Effect Transistor Cell and Fabricating the...

LDMOS TRANSISTOR STRUCTURES AND INTEGRATED CIRCUITS INCLUDING LDMOS...

METHOD OF FORMING GATE STRUCTURE OF A SEMICONDUCTOR DEVICE

VERTICAL TUNNELING FIELD-EFFECT TRANSISTOR CELL AND FABRICATING THE...

MAGNETISM-CONTROLLABLE DUMMY STRUCTURES IN MEMORY DEVICE

SEMICONDUCTOR DIE

FABRICATION METHOD OF A METAL GATE STRUCTURE

DEVICE AND METHODS FOR HIGH-K AND METAL GATE SLACKS

INTEGRATED CIRCUITS WITH INACTIVE GATES AND METHODS OF MANUFACTURIN...

ENHANCED GATE REPLACEMENT PROCESS FOR HIGH-K METAL GATE TECHNOLOGY

SEMICONDUCTOR DIE

SEMICONDUCTOR DEVICE WITH PARTIALLY UNSILICIDED SOURCE/DRAIN

VERTICAL TUNNELING FIELD-EFFECT TRANSISTOR CELL AND FABRICATING THE...

High-K Film Apparatus and Method

N/P BOUNDARY EFFECT REDUCTION FOR METAL GATE TRANSISTORS