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Minghao Jin
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Patents Grants
last 30 patents
Information
Patent Grant
Method of manufacturing a semiconductor device having a charge comp...
Patent number
10,199,456
Issue date
Feb 5, 2019
Infineon Technologies Austria AG
Minghao Jin
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device comprising trench structures
Patent number
9,496,339
Issue date
Nov 15, 2016
Infineon Technologies Austria AG
Minghao Jin
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Electrode-aligned selective epitaxy method for vertical power devices
Patent number
9,478,639
Issue date
Oct 25, 2016
Infineon Technologies Austria AG
Minghao Jin
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device with charge compensation region underneath gat...
Patent number
9,443,973
Issue date
Sep 13, 2016
Infineon Technologies Austria AG
Minghao Jin
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Current sensors and methods of improving accuracy thereof
Patent number
9,425,788
Issue date
Aug 23, 2016
Infineon Technologies Austria AG
Minghao Jin
H03 - BASIC ELECTRONIC CIRCUITRY
Information
Patent Grant
Semiconductor device having a tapered gate structure and method
Patent number
9,324,823
Issue date
Apr 26, 2016
Infineon Technologies Austria AG
Oliver Blank
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
Method of Manufacturing a Semiconductor Device Having a Charge Comp...
Publication number
20160372538
Publication date
Dec 22, 2016
Infineon Technologies Austria AG
Minghao Jin
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
ELECTRODE-ALIGNED SELECTIVE EPITAXY METHOD FOR VERTICAL POWER DEVICES
Publication number
20160254367
Publication date
Sep 1, 2016
Infineon Technologies Austria AG
Minghao Jin
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE WITH CHARGE COMPENSATION REGION UNDERNEATH GAT...
Publication number
20160149028
Publication date
May 26, 2016
Minghao Jin
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Semiconductor Device Having a Tapered Gate Structure and Method
Publication number
20160049486
Publication date
Feb 18, 2016
Infineon Technologies Austria AG
Oliver Blank
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE COMPRISING TRENCH STRUCTURES
Publication number
20150349056
Publication date
Dec 3, 2015
Infineon Technologies Austria AG
Minghao Jin
H01 - BASIC ELECTRIC ELEMENTS