Minghwei Hong

Person

Zhubei City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Material having single crystal perovskite, device including the sam...
- Patent number 11,615,955
- Issue date Mar 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having high-κ dielectric layer and method for...
- Patent number 11,201,055
- Issue date Dec 14, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Hua Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-crystal rare earth oxide grown on III-V compound
- Patent number 11,081,339
- Issue date Aug 3, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuanhsiung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Material having single crystal perovskite, device including the sam...
- Patent number 10,755,924
- Issue date Aug 25, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-crystal rare earth oxide grown on III-V compound
- Patent number 10,283,349
- Issue date May 7, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuanhsiung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS devices with ultra-high dielectric constants and methods of for...
- Patent number 10,158,014
- Issue date Dec 18, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Han Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method
- Patent number 10,032,770
- Issue date Jul 24, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Te Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method
- Patent number 9,620,605
- Issue date Apr 11, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Te Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS devices with ultra-high dielectric constants and methods of for...
- Patent number 9,614,079
- Issue date Apr 4, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Han Liao
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230011006
- Publication date Jan 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Minghwei HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MATERIAL HAVING SINGLE CRYSTAL PEROVSKITE, DEVICE INCLUDING THE SAM...
- Publication number 20200388490
- Publication date Dec 10, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Yu YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE-CRYSTAL RARE EARTH OXIDE GROWN ON III-V COMPOUND
- Publication number 20190252184
- Publication date Aug 15, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuanhsiung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING HIGH-K DIELECTRIC LAYER AND METHOD FOR...
- Publication number 20180151356
- Publication date May 31, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Hua FU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MATERIAL HAVING SINGLE CRYSTAL PEROVSKITE, DEVICE INCLUDING THE SAM...
- Publication number 20170352539
- Publication date Dec 7, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Yu YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Structure and Method
- Publication number 20170213822
- Publication date Jul 27, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Te Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mos Devices with Ultra-High Dielectric Constants and Methods of For...
- Publication number 20170207094
- Publication date Jul 20, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Han Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Structure and Method
- Publication number 20160336416
- Publication date Nov 17, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Te Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS Devices with Ultra-High Dielectric Constants and Methods of For...
- Publication number 20150287834
- Publication date Oct 8, 2015
- National Taiwan University
- Ming-Han Liao
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Minghwei Hong

Person

Patents Grantslast 30 patents

Material having single crystal perovskite, device including the sam...

Semiconductor device having high-κ dielectric layer and method for...

Single-crystal rare earth oxide grown on III-V compound

Material having single crystal perovskite, device including the sam...

Single-crystal rare earth oxide grown on III-V compound

MOS devices with ultra-high dielectric constants and methods of for...

Semiconductor device structure and method

Semiconductor device structure and method

MOS devices with ultra-high dielectric constants and methods of for...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

MATERIAL HAVING SINGLE CRYSTAL PEROVSKITE, DEVICE INCLUDING THE SAM...

SINGLE-CRYSTAL RARE EARTH OXIDE GROWN ON III-V COMPOUND

SEMICONDUCTOR DEVICE HAVING HIGH-K DIELECTRIC LAYER AND METHOD FOR...

MATERIAL HAVING SINGLE CRYSTAL PEROVSKITE, DEVICE INCLUDING THE SAM...

Semiconductor Device Structure and Method

Mos Devices with Ultra-High Dielectric Constants and Methods of For...

Semiconductor Device Structure and Method

MOS Devices with Ultra-High Dielectric Constants and Methods of For...