Minhyun LEE

Person

Yongin-si, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistor including channels having a hollow closed c...
- Patent number 12,356,668
- Issue date Jul 8, 2025
- Samsung Electronics Co., Ltd.
- Minsu Seol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical nonvolatile memory device including memory cell string
- Patent number 12,272,402
- Issue date Apr 8, 2025
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device and operating method of the same
- Patent number 12,268,106
- Issue date Apr 1, 2025
- Samsung Electronics Co., Ltd.
- Minhyun Lee
Information Patent Grant
Field effect transistor including gate insulating layer formed of t...
- Patent number 12,255,244
- Issue date Mar 18, 2025
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensors integrated with infrared sensors and electronic devic...
- Patent number 12,199,129
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device and apparatus including the same
- Patent number 12,193,235
- Issue date Jan 7, 2025
- Samsung Electronics Co., Ltd.
- Youngtek Oh
Information Patent Grant
Interconnect structure and electronic apparatus including the same
- Patent number 12,183,679
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Hyeonjin Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neural computer including image sensor capable of controlling photo...
- Patent number 12,147,888
- Issue date Nov 19, 2024
- Samsung Electronics Co., Ltd.
- Changhyun Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Boron nitride layer, apparatus including the same, and method of fa...
- Patent number 12,139,814
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Changseok Lee
- C30 - CRYSTAL GROWTH
Information Patent Grant
Two-dimensional material-based wiring conductive layer contact stru...
- Patent number 12,142,697
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Minsu Seol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor including two-dimensional (2D) channel
- Patent number 12,087,818
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and apparatus including the same
- Patent number 12,080,649
- Issue date Sep 3, 2024
- Samsung Electronics Co., Ltd.
- Hyeonjin Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including two-dimensional semiconductor material
- Patent number 12,062,697
- Issue date Aug 13, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including metal-2 dimensional material-semicon...
- Patent number 12,040,360
- Issue date Jul 16, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superlattice structure including two-dimensional material and devic...
- Patent number 12,034,049
- Issue date Jul 9, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor including channel formed of 2D material
- Patent number 12,027,588
- Issue date Jul 2, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical type transistor, inverter including the same, and vertical...
- Patent number 12,002,882
- Issue date Jun 4, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memristor and neuromorphic device comprising the same
- Patent number 11,985,910
- Issue date May 14, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
Information Patent Grant
Field effect transistor and method of manufacturing the same
- Patent number 11,935,790
- Issue date Mar 19, 2024
- Samsung Electronics Co., Ltd.
- Minsu Seol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-dimensional material-based wiring conductive layer contact stru...
- Patent number 11,830,952
- Issue date Nov 28, 2023
- Samsung Electronics Co., Ltd.
- Minsu Seol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pellicles for photomasks, reticles including the photomasks, and me...
- Patent number 11,703,753
- Issue date Jul 18, 2023
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Boron nitride layer, apparatus including the same, and method of fa...
- Patent number 11,624,127
- Issue date Apr 11, 2023
- Samsung Electronics Co., Ltd.
- Changseok Lee
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nonvolatile memory device and operating method of the same
- Patent number 11,600,774
- Issue date Mar 7, 2023
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor including gate insulating layer formed of t...
- Patent number 11,588,034
- Issue date Feb 21, 2023
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superlattice structure including two-dimensional material and devic...
- Patent number 11,575,011
- Issue date Feb 7, 2023
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical type transistor, inverter including the same, and vertical...
- Patent number 11,563,116
- Issue date Jan 24, 2023
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor including channel formed of 2D material
- Patent number 11,532,709
- Issue date Dec 20, 2022
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including two-dimensional semiconductor material
- Patent number 11,508,815
- Issue date Nov 22, 2022
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor including two-dimensional (2D) channel
- Patent number 11,508,814
- Issue date Nov 22, 2022
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure and electronic apparatus including the same
- Patent number 11,462,477
- Issue date Oct 4, 2022
- Samsung Electronics Co., Ltd.
- Hyeonjin Shin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL NAND FLASH MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDIN...
- Publication number 20250227931
- Publication date Jul 10, 2025
- Samsung Electronics Co., Ltd.
- Hoseok HEO
Information Patent Application
NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME
- Publication number 20250204290
- Publication date Jun 19, 2025
- Samsung Electronics Co., Ltd.
- Minhyun LEE
Information Patent Application
VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUD...
- Publication number 20250201305
- Publication date Jun 19, 2025
- Samsung Electronics Co., Ltd.
- Seungdam HYUN
- G11 - INFORMATION STORAGE
Information Patent Application
VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING
- Publication number 20250201307
- Publication date Jun 19, 2025
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- G11 - INFORMATION STORAGE
Information Patent Application
FIELD EFFECT TRANSISTOR INCLUDING GATE INSULATING LAYER FORMED OF T...
- Publication number 20250185339
- Publication date Jun 5, 2025
- Samsung Electronics Co., Ltd.
- Minhyun LEE
Information Patent Application
SEMICONDUCTOR DEVICE, AND MEMORY APPARATUS AND ELECTRONIC APPARATUS...
- Publication number 20250126803
- Publication date Apr 17, 2025
- Samsung Electronics Co., Ltd.
- Seunggeol NAM
Information Patent Application
MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
- Publication number 20250098171
- Publication date Mar 20, 2025
- Samsung Electronics Co., Ltd.
- Kyunghun KIM
Information Patent Application
NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250089341
- Publication date Mar 13, 2025
- Samsung Electronics Co., Ltd.
- Hoseok HEO
- G11 - INFORMATION STORAGE
Information Patent Application
BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FA...
- Publication number 20250066950
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Changseok LEE
- C30 - CRYSTAL GROWTH
Information Patent Application
VERTICAL NAND FLASH MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDIN...
- Publication number 20250017017
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Hoseok Heo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL
- Publication number 20240363689
- Publication date Oct 31, 2024
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240221832
- Publication date Jul 4, 2024
- Samsung Electronics Co., Ltd.
- Seyun KIM
- G11 - INFORMATION STORAGE
Information Patent Application
VERTICAL NAND FLASH MEMORY DEVICE
- Publication number 20240224530
- Publication date Jul 4, 2024
- Samsung Electronics Co., Ltd.
- Seungdam HYUN
- G11 - INFORMATION STORAGE
Information Patent Application
VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUD...
- Publication number 20240221834
- Publication date Jul 4, 2024
- Samsung Electronics Co., Ltd.
- Hoseok HEO
- G11 - INFORMATION STORAGE
Information Patent Application
VERTICAL NAND FLASH MEMORY DEVICE
- Publication number 20240215249
- Publication date Jun 27, 2024
- Samsung Electronics Co., Ltd.
- Kyunghun KIM
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240186183
- Publication date Jun 6, 2024
- Samsung Electronics Co., Ltd.
- Minsu SEOL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS
- Publication number 20240096415
- Publication date Mar 21, 2024
- Samsung Electronics Co., Ltd.
- Changseok LEE
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-DIMENSIONAL MATERIAL-BASED WIRING CONDUCTIVE LAYER CONTACT STRU...
- Publication number 20240038903
- Publication date Feb 1, 2024
- Samsung Electronics Co., Ltd.
- Minsu SEOL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERLATTICE STRUCTURE INCLUDING TWO-DIMENSIONAL MATERIAL AND DEVIC...
- Publication number 20230395665
- Publication date Dec 7, 2023
- Samsung Electronics Co., LTD
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FA...
- Publication number 20230272554
- Publication date Aug 31, 2023
- Samsung Electronics Co., Ltd.
- Changseok LEE
- C30 - CRYSTAL GROWTH
Information Patent Application
FIELD EFFECT TRANSISTOR INCLUDING GATE INSULATING LAYER FORMED OF T...
- Publication number 20230197811
- Publication date Jun 22, 2023
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME
- Publication number 20230189673
- Publication date Jun 15, 2023
- Samsung Electronics Co., Ltd.
- Minhyun LEE
Information Patent Application
VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUD...
- Publication number 20230180481
- Publication date Jun 8, 2023
- Samsung Electronics Co., Ltd.
- Hagyoul Bae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TYPE TRANSISTOR, INVERTER INCLUDING THE SAME, AND VERTICAL...
- Publication number 20230155017
- Publication date May 18, 2023
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR INCLUDING CHANNEL FORMED OF 2D MATERIAL
- Publication number 20230077783
- Publication date Mar 16, 2023
- Samsung Electronics Co.,Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIRING INCLUDING GRAPHENE LAYER AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230079680
- Publication date Mar 16, 2023
- Samsung Electronics Co., Ltd.
- Keunwook SHIN
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL
- Publication number 20230076900
- Publication date Mar 9, 2023
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR INCLUDING TWO-DIMENSIONAL (2D) CHANNEL
- Publication number 20230031861
- Publication date Feb 2, 2023
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND APPARATUS INCLUDING THE SAME
- Publication number 20220415800
- Publication date Dec 29, 2022
- Samsung Electronics Co., Ltd.
- Hyeonjin SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURE AND ELECTRONIC APPARATUS INCLUDING THE SAME
- Publication number 20220415801
- Publication date Dec 29, 2022
- Samsung Electronics Co., LTD
- Hyeonjin SHIN
- H01 - BASIC ELECTRIC ELEMENTS

Minhyun LEE

Person

Patents Grantslast 30 patents

Field effect transistor including channels having a hollow closed c...

Vertical nonvolatile memory device including memory cell string

Nonvolatile memory device and operating method of the same

Field effect transistor including gate insulating layer formed of t...

Image sensors integrated with infrared sensors and electronic devic...

Nonvolatile memory device and apparatus including the same

Interconnect structure and electronic apparatus including the same

Neural computer including image sensor capable of controlling photo...

Boron nitride layer, apparatus including the same, and method of fa...

Two-dimensional material-based wiring conductive layer contact stru...

Transistor including two-dimensional (2D) channel

Semiconductor memory device and apparatus including the same

Semiconductor device including two-dimensional semiconductor material

Semiconductor device including metal-2 dimensional material-semicon...

Superlattice structure including two-dimensional material and devic...

Field effect transistor including channel formed of 2D material

Vertical type transistor, inverter including the same, and vertical...

Memristor and neuromorphic device comprising the same

Field effect transistor and method of manufacturing the same

Two-dimensional material-based wiring conductive layer contact stru...

Pellicles for photomasks, reticles including the photomasks, and me...

Boron nitride layer, apparatus including the same, and method of fa...

Nonvolatile memory device and operating method of the same

Field effect transistor including gate insulating layer formed of t...

Superlattice structure including two-dimensional material and devic...

Vertical type transistor, inverter including the same, and vertical...

Field effect transistor including channel formed of 2D material

Semiconductor device including two-dimensional semiconductor material

Transistor including two-dimensional (2D) channel

Interconnect structure and electronic apparatus including the same

Patents Applicationslast 30 patents

VERTICAL NAND FLASH MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDIN...

NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME

VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUD...

VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING

FIELD EFFECT TRANSISTOR INCLUDING GATE INSULATING LAYER FORMED OF T...

SEMICONDUCTOR DEVICE, AND MEMORY APPARATUS AND ELECTRONIC APPARATUS...

MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME

NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FA...

VERTICAL NAND FLASH MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDIN...

SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL

NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

VERTICAL NAND FLASH MEMORY DEVICE

VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUD...

VERTICAL NAND FLASH MEMORY DEVICE

FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS

TWO-DIMENSIONAL MATERIAL-BASED WIRING CONDUCTIVE LAYER CONTACT STRU...

SUPERLATTICE STRUCTURE INCLUDING TWO-DIMENSIONAL MATERIAL AND DEVIC...

BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FA...

FIELD EFFECT TRANSISTOR INCLUDING GATE INSULATING LAYER FORMED OF T...

NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME

VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUD...

VERTICAL TYPE TRANSISTOR, INVERTER INCLUDING THE SAME, AND VERTICAL...

FIELD EFFECT TRANSISTOR INCLUDING CHANNEL FORMED OF 2D MATERIAL

WIRING INCLUDING GRAPHENE LAYER AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL

TRANSISTOR INCLUDING TWO-DIMENSIONAL (2D) CHANNEL

SEMICONDUCTOR MEMORY DEVICE AND APPARATUS INCLUDING THE SAME

INTERCONNECT STRUCTURE AND ELECTRONIC APPARATUS INCLUDING THE SAME