Minoru Amano

Person

Sagamihara, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Adjustable read reference voltage to reduce errors in memory devices
- Patent number 9,947,380
- Issue date Apr 17, 2018
- TOSHIBA MEMORY CORPORATION
- Masahiko Nakayama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element and memory device
- Patent number 9,818,464
- Issue date Nov 14, 2017
- Kabushiki Kaisha Toshiba
- Daisuke Saida
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element having a magnetic layer including O
- Patent number 9,647,203
- Issue date May 9, 2017
- Kabushiki Kaisha Toshiba
- Eiji Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory
- Patent number 9,620,189
- Issue date Apr 11, 2017
- Kabushiki Kaisha Toshiba
- Naoharu Shimomura
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element having an underlayer and a side wal...
- Patent number 9,508,926
- Issue date Nov 29, 2016
- Kabushiki Kaisha Toshiba
- Eiji Kitagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device
- Patent number 9,466,350
- Issue date Oct 11, 2016
- Kabushiki Kaisha Toshiba
- Akiyuki Murayama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 9,299,918
- Issue date Mar 29, 2016
- Kabushiki Kaisha Toshiba
- Tadaomi Daibou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory
- Patent number 9,230,628
- Issue date Jan 5, 2016
- Kabushiki Kaisha Toshiba
- Naoharu Shimomura
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory and method of manufacturing the same
- Patent number 9,224,944
- Issue date Dec 29, 2015
- Kabushiki Kaisha Toshiba
- Shigeki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 9,219,227
- Issue date Dec 22, 2015
- Kabushiki Kaisha Toshiba
- Tadaomi Daibou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive effect element, magnetic memory, and magnetoresist...
- Patent number 9,166,065
- Issue date Oct 20, 2015
- Kabushiki Kaisha Toshiba
- Yuichi Ohsawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 9,087,980
- Issue date Jul 21, 2015
- Kabushiki Kaisha Toshiba
- Tadaomi Daibou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element and nonvolatile memory device
- Patent number 9,025,368
- Issue date May 5, 2015
- Kabushiki Kaisha Toshiba
- Daisuke Saida
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory
- Patent number 8,994,131
- Issue date Mar 31, 2015
- Kabushiki Kaisha Toshiba
- Naoharu Shimomura
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element
- Patent number 8,928,055
- Issue date Jan 6, 2015
- Kabushiki Kaisha Toshiba
- Daisuke Saida
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive device and nonvolatile memory with the same
- Patent number 8,879,307
- Issue date Nov 4, 2014
- Kabushiki Kaisha Toshiba
- Eiji Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,878,317
- Issue date Nov 4, 2014
- Kabushiki Kaisha Toshiba
- Tadaomi Daibou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device
- Patent number 8,848,433
- Issue date Sep 30, 2014
- Kabushiki Kaisha Toshiba
- Daisuke Saida
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory and method of fabricating the same
- Patent number 8,841,139
- Issue date Sep 23, 2014
- Kabushiki Kaisha Toshiba
- Chikayoshi Kamata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device
- Patent number 8,787,077
- Issue date Jul 22, 2014
- Kabushiki Kaisha Toshiba
- Daisuke Saida
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,754,433
- Issue date Jun 17, 2014
- Kabushiki Kaisha Toshiba
- Yukiteru Matsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device
- Patent number 8,737,122
- Issue date May 27, 2014
- Kabushiki Kaisha Toshiba
- Daisuke Saida
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element and nonvolatile memory device
- Patent number 8,716,817
- Issue date May 6, 2014
- Kabushiki Kaisha Toshiba
- Daisuke Saida
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory and method of manufacturing the same
- Patent number 8,710,605
- Issue date Apr 29, 2014
- Kabushiki Kaisha Toshiba
- Shigeki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,680,632
- Issue date Mar 25, 2014
- Kabushiki Kaisha Toshiba
- Tadaomi Daibou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element and nonvolatile memory device
- Patent number 8,582,355
- Issue date Nov 12, 2013
- Kabushiki Kaisha Toshiba
- Daisuke Saida
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic element and nonvolatile memory device
- Patent number 8,576,616
- Issue date Nov 5, 2013
- Kabushiki Kaisha Toshiba
- Daisuke Saida
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory
- Patent number 8,531,875
- Issue date Sep 10, 2013
- Kabushiki Kaisha Toshiba
- Satoshi Yanagi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic recording element and nonvolatile memory device
- Patent number 8,508,979
- Issue date Aug 13, 2013
- Kabushiki Kaisha Toshiba
- Daisuke Saida
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic recording element and nonvolatile memory device
- Patent number 8,488,375
- Issue date Jul 16, 2013
- Kabushiki Kaisha Toshiba
- Daisuke Saida
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20200075671
- Publication date Mar 5, 2020
- Toshiba Memory Corporation
- Jyunichi OZEKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20170263679
- Publication date Sep 14, 2017
- Kabushiki Kaisha Toshiba
- Jyunichi OZEKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING MAGNETORESISTIVE MEMORY DEVICE
- Publication number 20170263860
- Publication date Sep 14, 2017
- Kabushiki Kaisha Toshiba
- Satoshi SETO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY AND MEMORY DEVICE
- Publication number 20170263336
- Publication date Sep 14, 2017
- Kabushiki Kaisha Toshiba
- Masahiko NAKAYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY ELEMENT AND MEMORY DEVICE
- Publication number 20160379698
- Publication date Dec 29, 2016
- KABUSHIKI KAISHA TOSHIBA
- Daisuke SAIDA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20160267960
- Publication date Sep 15, 2016
- Kabushiki Kaisha Toshiba
- Akiyuki MURAYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT, METHOD OF MANUFACTURING MAGNETORESISTIVE...
- Publication number 20160260773
- Publication date Sep 8, 2016
- Kabushiki Kaisha Toshiba
- Eiji KITAGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY
- Publication number 20160118098
- Publication date Apr 28, 2016
- KABUSHIKI KAISHA TOSHIBA
- Naoharu SHIMOMURA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20160013397
- Publication date Jan 14, 2016
- Kabushiki Kaisha Toshiba
- Eiji KITAGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT HAVING A MAGNETIC LAYER INCLUDING O
- Publication number 20150263270
- Publication date Sep 17, 2015
- Kabushiki Kaisha Toshiba
- Eiji KITAGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20150076635
- Publication date Mar 19, 2015
- KABUSHIKI KAISHA TOSHIBA
- Tadaomi DAIBOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20150014756
- Publication date Jan 15, 2015
- KABUSHIKI KAISHA TOSHIBA
- Tadaomi DAIBOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE
- Publication number 20140269037
- Publication date Sep 18, 2014
- KABUSHIKI KAISHA TOSHIBA
- Daisuke SAIDA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY
- Publication number 20140269038
- Publication date Sep 18, 2014
- KABUSHIKI KAISHA TOSHIBA
- Naoharu SHIMOMURA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME
- Publication number 20140206106
- Publication date Jul 24, 2014
- Kabushiki Kaisha Toshiba
- Shigeki TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20140159177
- Publication date Jun 12, 2014
- WPI-AIMR, Tohoku University
- Tadaomi DAIBOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE
- Publication number 20140085968
- Publication date Mar 27, 2014
- Kabushiki Kaisha Toshiba
- Daisuke SAIDA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY
- Publication number 20140084402
- Publication date Mar 27, 2014
- Kabushiki Kaisha Toshiba
- Naoharu SHIMOMURA
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICE
- Publication number 20140085969
- Publication date Mar 27, 2014
- Kabushiki Kaisha Toshiba
- Daisuke SAIDA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE
- Publication number 20130249024
- Publication date Sep 26, 2013
- Kabushiki Kaisha Toshiba
- Daisuke Saida
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY AND METHOD OF FABRICATING THE SAME
- Publication number 20130249028
- Publication date Sep 26, 2013
- Chikayoshi KAMATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE RESISTANCE CHANGE DEVICE
- Publication number 20130234087
- Publication date Sep 12, 2013
- Kabushiki Kaisha Toshiba
- Takashi Yamauchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20130095656
- Publication date Apr 18, 2013
- Kabushiki Kaisha Toshiba
- Yukiteru Matsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE
- Publication number 20130070522
- Publication date Mar 21, 2013
- Kabushiki Kaisha Toshiba
- Daisuke Saida
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE
- Publication number 20130070523
- Publication date Mar 21, 2013
- Kabushiki Kaisha Toshiba
- Daisuke Saida
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND MAGNETORESIST...
- Publication number 20130069182
- Publication date Mar 21, 2013
- Yuichi OHSAWA
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE
- Publication number 20130069185
- Publication date Mar 21, 2013
- Kabushiki Kaisha Toshiba
- Daisuke SAIDA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE DEVICE AND MAGNETIC MEMORY
- Publication number 20130028011
- Publication date Jan 31, 2013
- Kabushiki Kaisha Toshiba
- Eiji KITAGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20120241881
- Publication date Sep 27, 2012
- TOHOKU UNIVERSITY
- Tadaomi DAIBOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC ELEMENT AND NONVOLATILE MEMORY DEVICE
- Publication number 20120243308
- Publication date Sep 27, 2012
- Kabushiki Kaisha Toshiba
- Daisuke SAIDA
- G11 - INFORMATION STORAGE

Minoru Amano

Person

Patents Grantslast 30 patents

Adjustable read reference voltage to reduce errors in memory devices

Magnetic memory element and memory device

Magnetoresistive element having a magnetic layer including O

Magnetic memory

Magnetoresistive effect element having an underlayer and a side wal...

Magnetic memory device

Magnetoresistive element and magnetic memory

Magnetic memory

Magnetic memory and method of manufacturing the same

Magnetoresistive element and magnetic memory

Magnetoresistive effect element, magnetic memory, and magnetoresist...

Magnetoresistive element and magnetic memory

Magnetic memory element and nonvolatile memory device

Magnetic memory

Magnetic memory element

Magnetoresistive device and nonvolatile memory with the same

Magnetoresistive element and magnetic memory

Nonvolatile memory device

Magnetic memory and method of fabricating the same

Nonvolatile memory device

Semiconductor device and method of manufacturing the same

Nonvolatile memory device

Magnetic memory element and nonvolatile memory device

Magnetic memory and method of manufacturing the same

Magnetoresistive element and magnetic memory

Magnetic memory element and nonvolatile memory device

Magnetic element and nonvolatile memory device

Magnetic memory

Magnetic recording element and nonvolatile memory device

Magnetic recording element and nonvolatile memory device

Patents Applicationslast 30 patents

MAGNETIC MEMORY DEVICE

MAGNETIC MEMORY DEVICE

METHOD OF MANUFACTURING MAGNETORESISTIVE MEMORY DEVICE

MEMORY AND MEMORY DEVICE

MAGNETIC MEMORY ELEMENT AND MEMORY DEVICE

MAGNETIC MEMORY DEVICE

MAGNETORESISTIVE ELEMENT, METHOD OF MANUFACTURING MAGNETORESISTIVE...

MAGNETIC MEMORY

MAGNETORESISTIVE EFFECT ELEMENT

MAGNETORESISTIVE ELEMENT HAVING A MAGNETIC LAYER INCLUDING O

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE

MAGNETIC MEMORY

MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

NONVOLATILE MEMORY DEVICE

MAGNETIC MEMORY

NONVOLATILE MEMORY DEVICE

MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE

MAGNETIC MEMORY AND METHOD OF FABRICATING THE SAME

NON-VOLATILE RESISTANCE CHANGE DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

NONVOLATILE MEMORY DEVICE

MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE

MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND MAGNETORESIST...

MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE

MAGNETORESISTIVE DEVICE AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETIC ELEMENT AND NONVOLATILE MEMORY DEVICE