Minoru Kawahara

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Osaka, JP

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Patents Grantslast 30 patents

Information Patent Grant
GaN crystal producing method, GaN crystal, GaN crystal substrate, s...
- Patent number 8,187,507
- Issue date May 29, 2012
- Osaka University
- Yusuke Mori
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing hexagonal boron nitride single crystal and hex...
- Patent number 7,815,733
- Issue date Oct 19, 2010
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing silicon carbide (SiC) single crystal and silic...
- Patent number 7,419,545
- Issue date Sep 2, 2008
- Matsushita Electric Industrial Co., Ltd.
- Yasuo Kitaoka
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
GaN CRYSTAL PRODUCING METHOD, GaN CRYSTAL, GaN CRYSTAL SUBSTRATE, S...
- Publication number 20100059717
- Publication date Mar 11, 2010
- OSAKA UNIVERSITY
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SILICON CARBIDE (SiC) CRYSTAL AND SILICON CARB...
- Publication number 20090205561
- Publication date Aug 20, 2009
- OSAKA UNIVERSITY
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING HEXAGONAL BORON NITRIDE SINGLE CRYSTAL AND HEX...
- Publication number 20080011224
- Publication date Jan 17, 2008
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
Process For Producing Aluminum Nitride Crystal And Aluminum Nitride...
- Publication number 20080008642
- Publication date Jan 10, 2008
- OSAKA UNIVERSITY
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Silicon Carbide (Sic) Single Crystal and Silic...
- Publication number 20070221122
- Publication date Sep 27, 2007
- Matsushita Electric Industrial Co., Ltd.
- Yasuo Kitaoka
- C30 - CRYSTAL GROWTH