Minoru Taguchi

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing an integrated circuit having a charge coupl...
- Patent number 5,489,545
- Issue date Feb 6, 1996
- Kabushiki Kaisha Toshiba
- Minoru Taguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction type of compound semiconductor integrated circuit
- Patent number 5,376,822
- Issue date Dec 27, 1994
- Kabushiki Kaisha Toshiba
- Minoru Taguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having a charge coupled device and MOS transisto...
- Patent number 5,321,282
- Issue date Jun 14, 1994
- Kabushiki Kaisha Toshiba
- Minoru Taguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having CCD and its peripheral bipolar transistors
- Patent number 5,286,986
- Issue date Feb 15, 1994
- Kabushiki Kaisha Toshiba
- Kazuo Kihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device having a charge transfer de...
- Patent number 5,260,228
- Issue date Nov 9, 1993
- Kabushiki Kaisha Toshiba
- Minoru Taguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising an analogue element and a digital e...
- Patent number 5,241,208
- Issue date Aug 31, 1993
- Kabushiki Kaisha Toshiba
- Minoru Taguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having a charge transfer device, MOSFETs, and bipolar transi...
- Patent number 5,220,190
- Issue date Jun 15, 1993
- Kabushiki Kaisha Toshiba
- Minoru Taguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including inversion preventing layers having a...
- Patent number 5,218,224
- Issue date Jun 8, 1993
- Kabushiki Kaisha Toshiba
- Minoru Taguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit and method of making the same
- Patent number 5,198,880
- Issue date Mar 30, 1993
- Kabushiki Kaisha Toshiba
- Minoru Taguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a charge transfer device, MOSFETs, and...
- Patent number 5,184,203
- Issue date Feb 2, 1993
- Kabushiki Kaisha Toshiba
- Minoru Taguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic semiconductor device having CCD, bipolar and MOS structures
- Patent number 4,994,888
- Issue date Feb 19, 1991
- Kabushiki Kaisha Toshiba
- Minoru Taguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit
- Patent number 4,935,800
- Issue date Jun 19, 1990
- Kabushiki Kaisha Toshiba
- Minoru Taguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of selectively etching high impurity concentration semicondu...
- Patent number 4,554,046
- Issue date Nov 19, 1985
- Kabushiki Kaisha Toshiba
- Minoru Taguchi
- H01 - BASIC ELECTRIC ELEMENTS

Minoru Taguchi

Person

Patents Grantslast 30 patents

Method of manufacturing an integrated circuit having a charge coupl...

Heterojunction type of compound semiconductor integrated circuit

Integrated circuit having a charge coupled device and MOS transisto...

Semiconductor device having CCD and its peripheral bipolar transistors

Method of making a semiconductor device having a charge transfer de...

Semiconductor device comprising an analogue element and a digital e...

Device having a charge transfer device, MOSFETs, and bipolar transi...

Semiconductor device including inversion preventing layers having a...

Semiconductor integrated circuit and method of making the same

Semiconductor device having a charge transfer device, MOSFETs, and...

Monolithic semiconductor device having CCD, bipolar and MOS structures

Semiconductor integrated circuit

Method of selectively etching high impurity concentration semicondu...