Miron Drobnis

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Manchester, GB

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Patents Grantslast 30 patents

Information Patent Grant
Trench gate MOSFET and method of manufacturing the same
- Patent number 8,357,971
- Issue date Jan 22, 2013
- NXP B.V.
- Steven Thomas Peake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate semiconductor devices and the manufacture thereof
- Patent number 6,784,488
- Issue date Aug 31, 2004
- Koninklijke Philips Electronics N.V.
- Eddie Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recombination center diffusion controlled by carbon concentration
- Patent number 6,781,156
- Issue date Aug 24, 2004
- Koninklijke Philips Electronics N.V.
- Miron Drobnis
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRENCH GATE MOSFET AND METHOD OF MANUFACTURING THE SAME
- Publication number 20100320532
- Publication date Dec 23, 2010
- NXP B.V.
- Steven Thomas Peake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor devices and their manufacture
- Publication number 20030127645
- Publication date Jul 10, 2003
- Koninklijke Philips Electronics N.V.
- Miron Drobnis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench-gate semiconductor devices and the manufacture thereof
- Publication number 20030094650
- Publication date May 22, 2003
- Koninklijke Philips Electronics
- Eddie Huang
- H01 - BASIC ELECTRIC ELEMENTS