Misaichi Takeuchi

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Kusatsu-shi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having aluminum nitride layer with void formed...
- Patent number 8,698,168
- Issue date Apr 15, 2014
- Sharp Kabushiki Kaisha
- Yoshihiro Ueta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the formation of semiconductor layer
- Patent number 6,530,991
- Issue date Mar 11, 2003
- Riken
- Satoru Tanaka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CRYSTAL GROWTH METHOD AND SEMICONDUCTOR DEVICE
- Publication number 20120007039
- Publication date Jan 12, 2012
- THE RITSUMEIKAN TRUST
- Yoshihiro Ueta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for the formation of semiconductor layer
- Publication number 20010012678
- Publication date Aug 9, 2001
- Satoru Tanaka
- C30 - CRYSTAL GROWTH