Misao Takakusaki

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Patents Grantslast 30 patents

Information Patent Grant
Epitaxial growth process
- Patent number 8,231,728
- Issue date Jul 31, 2012
- Nippon Mining & Metals Co., Ltd.
- Misao Takakusaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method of GaN thin film template substrate, GaN thin...
- Patent number 8,137,460
- Issue date Mar 20, 2012
- Nippon Mining & Metals Co., Ltd.
- Satoru Morioka
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRODUCING NITRIDE COMPOUND SEMICONDUCTOR SUBSTRATE, AND...
- Publication number 20120256297
- Publication date Oct 11, 2012
- Satoru Morioka
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD OF GaN BASED SEMICONDUCTOR EPITAXIAL SUBSTRATE
- Publication number 20110244665
- Publication date Oct 6, 2011
- Makoto MIKAMI
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING NITRIDE COM...
- Publication number 20100101486
- Publication date Apr 29, 2010
- Misao Takakusaki
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD OF GaN THIN FILM TEMPLATE SUBSTRATE, GaN THIN...
- Publication number 20090294774
- Publication date Dec 3, 2009
- Satoru Morioka
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial growth process
- Publication number 20060178000
- Publication date Aug 10, 2006
- Nikko Materials Co., Ltd.
- Misao Takakusaki
- C30 - CRYSTAL GROWTH