Misbah Ul Azam

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods of manufacture of termination for vertical trench shielded...
- Patent number 11,482,601
- Issue date Oct 25, 2022
- Vishay SIliconix, LLC
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate semiconductor with non-uniform trench oxide
- Patent number 11,189,702
- Issue date Nov 30, 2021
- Vishay SIliconix, LLC
- M. Ayman Shibib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination for vertical trench shielded devices
- Patent number 10,950,699
- Issue date Mar 16, 2021
- Vishay SIliconix, LLC
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET termination trench
- Patent number 9,935,193
- Issue date Apr 3, 2018
- Siliconix Technology C.V.
- Misbah Ul Azam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET termination trench
- Patent number 9,614,043
- Issue date Apr 4, 2017
- Vishay Siliconix
- Misbah Ul Azam
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS OF MANUFACTURE OF TERMINATION FOR VERTICAL TRENCH SHIELDED...
- Publication number 20210210607
- Publication date Jul 8, 2021
- Siliconix Incorporated
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION FOR VERTICAL TRENCH SHIELDED DEVICES
- Publication number 20210043741
- Publication date Feb 11, 2021
- Siliconix Incorporated
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE SEMICONDUCTOR WITH NON-UNIFORM TRENCH OXIDE
- Publication number 20200243656
- Publication date Jul 30, 2020
- Siliconix Incorporated
- M. Ayman SHIBIB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET TERMINATION TRENCH
- Publication number 20150194495
- Publication date Jul 9, 2015
- VISHAY-SILICONIX
- Misbah Ul Azam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET TERMINATION TRENCH
- Publication number 20130207227
- Publication date Aug 15, 2013
- VISHAY-SILICONIX
- Misbah Ul Azam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A HYBRID SPLIT GATE SIMICONDUCTOR
- Publication number 20120220092
- Publication date Aug 30, 2012
- VISHAY-SILICONIX
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID SPLIT GATE SEMICONDUCTOR
- Publication number 20120211828
- Publication date Aug 23, 2012
- VISHAY-SILICONIX
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS

Misbah Ul Azam

Person

Patents Grantslast 30 patents

Methods of manufacture of termination for vertical trench shielded...

Split gate semiconductor with non-uniform trench oxide

Termination for vertical trench shielded devices

MOSFET termination trench

MOSFET termination trench

Patents Applicationslast 30 patents

METHODS OF MANUFACTURE OF TERMINATION FOR VERTICAL TRENCH SHIELDED...

TERMINATION FOR VERTICAL TRENCH SHIELDED DEVICES

SPLIT GATE SEMICONDUCTOR WITH NON-UNIFORM TRENCH OXIDE

MOSFET TERMINATION TRENCH

MOSFET TERMINATION TRENCH

METHOD OF FORMING A HYBRID SPLIT GATE SIMICONDUCTOR

HYBRID SPLIT GATE SEMICONDUCTOR