Mitsugu Wada

Person

Kanagawa-ken, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Exposure system
- Patent number 7,394,478
- Issue date Jul 1, 2008
- FUJIFILM Corporation
- Mitsugu Wada
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Semiconductor laser device having strain buffer layer between compr...
- Patent number 6,973,109
- Issue date Dec 6, 2005
- Fuji Photo Film Co., Ltd.
- Toshiaki Fukunaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser and method of manufacturing the same
- Patent number 6,876,688
- Issue date Apr 5, 2005
- Fuji Photo Film Co., Ltd.
- Toshiro Hayakawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN substrate formed under controlled growth condition over GaN lay...
- Patent number 6,797,416
- Issue date Sep 28, 2004
- Fuji Photo Film Co., Ltd.
- Mitsugu Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate including wide low-defect region for use in semiconductor...
- Patent number 6,709,513
- Issue date Mar 23, 2004
- Fuji Photo Film Co., Ltd.
- Toshiaki Fukunaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device having thickened impurity-doped aluminum...
- Patent number 6,625,190
- Issue date Sep 23, 2003
- Fuji Photo Film Co., Ltd.
- Toshiro Hayakawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-power semiconductor laser device having current confinement st...
- Patent number 6,600,770
- Issue date Jul 29, 2003
- Fuji Photo Film Co., Ltd.
- Toshiaki Fukunaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-power semiconductor laser device including resistance reductio...
- Patent number 6,553,046
- Issue date Apr 22, 2003
- Fuji Photo Film Co., Ltd.
- Fujio Akinaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser element
- Patent number 6,535,536
- Issue date Mar 18, 2003
- Fuji Photo Film Co., Ltd.
- Toshiaki Fukunaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-power semiconductor laser device having current confinement st...
- Patent number 6,516,016
- Issue date Feb 4, 2003
- Fuji Photo Film Co., Ltd.
- Toshiaki Fukunaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-power semiconductor laser device having current confinement st...
- Patent number 6,400,743
- Issue date Jun 4, 2002
- Fuji Photo Film Co., Ltd.
- Toshiaki Fukunaga
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser
- Patent number 6,285,695
- Issue date Sep 4, 2001
- Fuji Photo Film Co., Ltd.
- Hideki Asano
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser device
- Patent number 6,127,691
- Issue date Oct 3, 2000
- Fuji Photo Film Co., Ltd.
- Toshiaki Fukunaga
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser
- Patent number 6,028,874
- Issue date Feb 22, 2000
- Fuji Photo Film Co., Ltd.
- Mitsugu Wada
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser
- Patent number 5,995,528
- Issue date Nov 30, 1999
- Fuji Photo Film Co., Ltd.
- Toshiaki Fukunaga
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
Endocavity utrasonic probe
- Publication number 20060241479
- Publication date Oct 26, 2006
- Fuji Photo Film Co., Ltd.
- Mitsugu Wada
- B06 - GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
Information Patent Application
Exposure system
- Publication number 20050078168
- Publication date Apr 14, 2005
- Fuji Photo Film Co., Ltd.
- Mitsugu Wada
- B41 - PRINTING LINING MACHINES TYPEWRITERS STAMPS
Information Patent Application
GaN substrate formed under controlled growth condition over GaN lay...
- Publication number 20030180580
- Publication date Sep 25, 2003
- Fuji Photo Film Co., Ltd.
- Mitsugu Wada
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN substrate formed over GaN layer having discretely formed minute...
- Publication number 20030047746
- Publication date Mar 13, 2003
- Fuji Photo Film Co., Ltd.
- Toshiaki Kuniyasu
- C30 - CRYSTAL GROWTH
Information Patent Application
Substrate including wide low-defect region for use in semiconductor...
- Publication number 20030006211
- Publication date Jan 9, 2003
- Fuji Photo Film Co., Ltd.
- Toshiaki Fukunaga
- C30 - CRYSTAL GROWTH
Information Patent Application
High-power semiconductor laser device including resistance reductio...
- Publication number 20010043630
- Publication date Nov 22, 2001
- Fuji Photo Film Co., Ltd.
- Fujio Akinaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-power semiconductor laser device having current confinement st...
- Publication number 20010033591
- Publication date Oct 25, 2001
- Toshiaki Fukunaga
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor laser element
- Publication number 20010028668
- Publication date Oct 11, 2001
- Toshiaki Fukunaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor laser device having strain buffer layer between compr...
- Publication number 20010017875
- Publication date Aug 30, 2001
- Toshiaki Fukunaga
- B82 - NANO-TECHNOLOGY

Mitsugu Wada

Person

Patents Grantslast 30 patents

Exposure system

Semiconductor laser device having strain buffer layer between compr...

Semiconductor laser and method of manufacturing the same

GaN substrate formed under controlled growth condition over GaN lay...

Substrate including wide low-defect region for use in semiconductor...

Semiconductor laser device having thickened impurity-doped aluminum...

High-power semiconductor laser device having current confinement st...

High-power semiconductor laser device including resistance reductio...

Semiconductor laser element

High-power semiconductor laser device having current confinement st...

High-power semiconductor laser device having current confinement st...

Semiconductor laser

Semiconductor laser device

Semiconductor laser

Semiconductor laser

Patents Applicationslast 30 patents

Endocavity utrasonic probe

Exposure system

GaN substrate formed under controlled growth condition over GaN lay...

GaN substrate formed over GaN layer having discretely formed minute...

Substrate including wide low-defect region for use in semiconductor...

High-power semiconductor laser device including resistance reductio...

High-power semiconductor laser device having current confinement st...

Semiconductor laser element

Semiconductor laser device having strain buffer layer between compr...