Mitsuhiro TOGO

Person

Yokkaichi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistors with gate fins and method of making the same
- Patent number 12,015,084
- Issue date Jun 18, 2024
- SanDisk Technologies LLC
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage field effect transistor with vertical current paths an...
- Patent number 11,978,774
- Issue date May 7, 2024
- SanDisk Technologies LLC
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with gate fins and method of making the same
- Patent number 11,967,626
- Issue date Apr 23, 2024
- SanDisk Technologies LLC
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with stepped contact via structures and methods of form...
- Patent number 11,837,640
- Issue date Dec 5, 2023
- SanDisk Technologies LLC
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate material-based capacitor and resistor structures and methods o...
- Patent number 11,626,397
- Issue date Apr 11, 2023
- SanDisk Technologies LLC
- Hokuto Kodate
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage field effect transistors with self-aligned silicide co...
- Patent number 11,575,015
- Issue date Feb 7, 2023
- SanDisk Technologies LLC
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage field effect transistor with vertical current paths an...
- Patent number 11,450,768
- Issue date Sep 20, 2022
- SanDisk Technologies LLC
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate material-based capacitor and resistor structures and methods o...
- Patent number 11,322,597
- Issue date May 3, 2022
- SanDisk Technologies LLC
- Hokuto Kodate
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD EFFECT TRANSISTOR WITH CONTACT VIA STRUCTURES THAT ARE LATERA...
- Publication number 20240063062
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Kouta ONOGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A METAL OXIDE ETCH STOP L...
- Publication number 20230389317
- Publication date Nov 30, 2023
- Western Digital Technologies, Inc.
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH GATE FINS AND METHOD OF MAKING THE SAME
- Publication number 20230083560
- Publication date Mar 16, 2023
- SANDISK TECHNOLOGIES LLC
- Mitsuhiro TOGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH GATE FINS AND METHOD OF MAKING THE SAME
- Publication number 20230082824
- Publication date Mar 16, 2023
- SANDISK TECHNOLOGIES LLC
- Srinivas PULUGURTHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH GATE FINS AND METHOD OF MAKING THE SAME
- Publication number 20230079098
- Publication date Mar 16, 2023
- SANDISK TECHNOLOGIES LLC
- Mitsuhiro TOGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH STEPPED CONTACT VIA STRUCTURES AND METHODS OF FORM...
- Publication number 20220416037
- Publication date Dec 29, 2022
- SANDISK TECHNOLOGIES LLC
- Mitsuhiro TOGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH SELF-ALIGNED SILICIDE CO...
- Publication number 20220399448
- Publication date Dec 15, 2022
- SANDISK TECHNOLOGIES LLC
- Mitsuhiro TOGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTOR WITH VERTICAL CURRENT PATHS AN...
- Publication number 20220109054
- Publication date Apr 7, 2022
- SANDISK TECHNOLOGIES LLC
- Mitsuhiro TOGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTOR WITH VERTICAL CURRENT PATHS AN...
- Publication number 20220109071
- Publication date Apr 7, 2022
- SANDISK TECHNOLOGIES LLC
- Mitsuhiro TOGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE MATERIAL-BASED CAPACITOR AND RESISTOR STRUCTURES AND METHODS O...
- Publication number 20220068915
- Publication date Mar 3, 2022
- SANDISK TECHNOLOGIES LLC
- Hokuto KODATE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE MATERIAL-BASED CAPACITOR AND RESISTOR STRUCTURES AND METHODS O...
- Publication number 20220069097
- Publication date Mar 3, 2022
- SANDISK TECHNOLOGIES LLC
- Hokuto KODATE
- H01 - BASIC ELECTRIC ELEMENTS

Mitsuhiro TOGO

Person

Patents Grantslast 30 patents

Field effect transistors with gate fins and method of making the same

High voltage field effect transistor with vertical current paths an...

Field effect transistors with gate fins and method of making the same

Transistors with stepped contact via structures and methods of form...

Gate material-based capacitor and resistor structures and methods o...

High voltage field effect transistors with self-aligned silicide co...

High voltage field effect transistor with vertical current paths an...

Gate material-based capacitor and resistor structures and methods o...

Patents Applicationslast 30 patents

FIELD EFFECT TRANSISTOR WITH CONTACT VIA STRUCTURES THAT ARE LATERA...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A METAL OXIDE ETCH STOP L...

FIELD EFFECT TRANSISTORS WITH GATE FINS AND METHOD OF MAKING THE SAME

FIELD EFFECT TRANSISTORS WITH GATE FINS AND METHOD OF MAKING THE SAME

FIELD EFFECT TRANSISTORS WITH GATE FINS AND METHOD OF MAKING THE SAME

TRANSISTORS WITH STEPPED CONTACT VIA STRUCTURES AND METHODS OF FORM...

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH SELF-ALIGNED SILICIDE CO...

HIGH VOLTAGE FIELD EFFECT TRANSISTOR WITH VERTICAL CURRENT PATHS AN...

HIGH VOLTAGE FIELD EFFECT TRANSISTOR WITH VERTICAL CURRENT PATHS AN...

GATE MATERIAL-BASED CAPACITOR AND RESISTOR STRUCTURES AND METHODS O...

GATE MATERIAL-BASED CAPACITOR AND RESISTOR STRUCTURES AND METHODS O...