Mitsuhiro Togo

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including a MIS transistor
- Patent number 6,459,126
- Issue date Oct 1, 2002
- NEC Corporation
- Tohru Mogami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly reliable trench capacitor type memory cell
- Patent number 6,300,211
- Issue date Oct 9, 2001
- NEC Corporation
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly reliable trench capacitor type memory cell
- Patent number 6,249,017
- Issue date Jun 19, 2001
- NEC Corporation
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing surface channel type P-channel MOS transis...
- Patent number 6,159,809
- Issue date Dec 12, 2000
- NEC Corporation
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor device with reduced fringe capa...
- Patent number 6,124,176
- Issue date Sep 26, 2000
- NEC Corporation
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor with a trench isolation structure and a met...
- Patent number 6,063,694
- Issue date May 16, 2000
- NEC Corporation
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced fringe capacitance and short chan...
- Patent number 6,051,861
- Issue date Apr 18, 2000
- NEC Corporation
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device including a MIS transistor
- Publication number 20020096721
- Publication date Jul 25, 2002
- NEC Corporation
- Tohru Mogami
- H01 - BASIC ELECTRIC ELEMENTS