Mitsuo Nanba

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Hinondemachi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor bipolar transistor with concentric regions
- Patent number 5,237,200
- Issue date Aug 17, 1993
- Hitachi, Ltd.
- Mitsuo Nanba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,227,329
- Issue date Jul 13, 1993
- Hitachi, Ltd.
- Takashi Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polycrystalline silicon resistor for use in a semiconductor integra...
- Patent number 5,214,497
- Issue date May 25, 1993
- Hitachi, Ltd.
- Mitsuo Nanba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with optimal distance between emitter and tren...
- Patent number 5,109,263
- Issue date Apr 28, 1992
- Hitachi, Ltd.
- Mitsuo Nanba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of diffusing an impurity
- Patent number 4,373,975
- Issue date Feb 15, 1983
- Hitachi, Ltd.
- Mitsuo Nanba
- H01 - BASIC ELECTRIC ELEMENTS