Mitsuru Ura

Person

Hitachi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Ceramic packaged semiconductor device
- Patent number 4,651,192
- Issue date Mar 17, 1987
- Hitachi, Ltd.
- Yasuo Matsushita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sintered aluminum nitride semi-conductor device
- Patent number 4,585,706
- Issue date Apr 29, 1986
- Hitachi, Ltd.
- Yukio Takeda
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Electrically insulating silicon carbide sintered body
- Patent number 4,561,010
- Issue date Dec 24, 1985
- Hitachi, Ltd.
- Satoru Ogihara
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Sintered aluminum nitride and semi-conductor device using the same
- Patent number 4,540,673
- Issue date Sep 10, 1985
- Hitachi, Ltd.
- Yukio Takeda
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Ceramic packaged semiconductor device
- Patent number 4,517,584
- Issue date May 14, 1985
- Hitachi, Ltd.
- Yasuo Matsushita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High temperature thermistor
- Patent number 4,467,309
- Issue date Aug 21, 1984
- Hitachi, Ltd.
- Yasuo Matsushita
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Multilayer circuit board
- Patent number 4,299,873
- Issue date Nov 10, 1981
- Hitachi, Ltd.
- Satoru Ogihara
- B32 - LAYERED PRODUCTS
Information Patent Grant
Surface hafnium-titanium carbide coated hard alloy and method
- Patent number 4,269,899
- Issue date May 26, 1981
- Hitachi Metals, Ltd.
- Moriaki Fuyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Surface hafnium-titanium compound coated hard alloy material and me...
- Patent number 4,264,682
- Issue date Apr 28, 1981
- Hitachi Metals, Ltd.
- Moriaki Fuyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Temperature-compensated voltage reference diode with intermediate p...
- Patent number 4,200,877
- Issue date Apr 29, 1980
- Hitachi, Ltd.
- Takaya Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silver-electroplating process
- Patent number 4,177,114
- Issue date Dec 4, 1979
- Hitachi, Ltd.
- Yoshihiro Suzuki
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Process for preparation of semiconductor devices utilizing a two-st...
- Patent number 4,164,436
- Issue date Aug 14, 1979
- Hitachi, Ltd.
- Mitsuru Ura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low forward voltage drop semiconductor device having polycrystallin...
- Patent number 4,146,906
- Issue date Mar 27, 1979
- Hitachi, Ltd.
- Kenji Miyata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of doping inpurities
- Patent number 4,100,310
- Issue date Jul 11, 1978
- Hitachi, Ltd.
- Mitsuru Ura
- C30 - CRYSTAL GROWTH

Mitsuru Ura

Person

Patents Grantslast 30 patents

Ceramic packaged semiconductor device

Sintered aluminum nitride semi-conductor device

Electrically insulating silicon carbide sintered body

Sintered aluminum nitride and semi-conductor device using the same

Ceramic packaged semiconductor device

High temperature thermistor

Multilayer circuit board

Surface hafnium-titanium carbide coated hard alloy and method

Surface hafnium-titanium compound coated hard alloy material and me...

Temperature-compensated voltage reference diode with intermediate p...

Silver-electroplating process

Process for preparation of semiconductor devices utilizing a two-st...

Low forward voltage drop semiconductor device having polycrystallin...

Method of doping inpurities