Mitsushi Fujiki

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method for manufacturing the same having i...
- Patent number 8,338,249
- Issue date Dec 25, 2012
- Fujitsu Semiconductor Limited
- Makoto Takahashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and fabricating method thereof
- Patent number 7,892,916
- Issue date Feb 22, 2011
- Fujitsu Semiconductor Limited
- Tomohiro Takamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming ferroelectric capacitor and method for fabricati...
- Patent number 7,622,346
- Issue date Nov 24, 2009
- Fujitsu Microelectronics Limited
- Mitsushi Fujiki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having ferroelectric capacitor and its manufac...
- Patent number 7,518,173
- Issue date Apr 14, 2009
- Fujitsu Microelectronics Limited
- Yukinobu Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with specifically shaped contact holes
- Patent number 7,211,850
- Issue date May 1, 2007
- Fujitsu Limited
- Jirou Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor capacitor with diffusion prevention layer
- Patent number 6,933,156
- Issue date Aug 23, 2005
- Fujitsu Limited
- Wensheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor capacitor with diffusion prevention layer
- Patent number 6,713,808
- Issue date Mar 30, 2004
- Fujitsu Limited
- Wensheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing a strontium ruthenium oxide protective layer...
- Patent number 6,674,633
- Issue date Jan 6, 2004
- Fujitsu Limited
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitor having a PZT layer with an excess of Pb
- Patent number 6,555,864
- Issue date Apr 29, 2003
- Fujitsu Limited
- Jeffrey Scott Cross
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device having perovskite-type oxide film, production the...
- Patent number 6,194,228
- Issue date Feb 27, 2001
- Fujitsu Limited
- Mitsushi Fujiki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20130140614
- Publication date Jun 6, 2013
- FUJITSU SEMICONDUCTOR LIMITED
- Makoto TAKAHASHI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20100207178
- Publication date Aug 19, 2010
- Fujitsu Limited
- Makoto TAKAHASHI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME
- Publication number 20080203530
- Publication date Aug 28, 2008
- Fujitsu Limited
- Mitsushi FUJIKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING FERROELECTRIC CAPACITOR AND METHOD FOR FABRICATI...
- Publication number 20080057598
- Publication date Mar 6, 2008
- Fujitsu Limited
- Kenkichi Suezawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing method of semiconductor device
- Publication number 20070249065
- Publication date Oct 25, 2007
- FUJITSU LIMITED
- Mitsushi Fujiki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming ferroelectric capacitor and method for fabricati...
- Publication number 20070196932
- Publication date Aug 23, 2007
- FUJITSU LIMITED
- Mitsushi Fujiki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20070184595
- Publication date Aug 9, 2007
- FUJITSU LIMITED
- Jirou Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming method of ferroelectric capacitor and manufacturing method...
- Publication number 20070122917
- Publication date May 31, 2007
- FUJITSU LIMITED
- Mitsushi Fujiki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with ferroelectric capacitor and fabrication m...
- Publication number 20070037298
- Publication date Feb 15, 2007
- FUJITSU LIMITED
- Katsuyoshi Matsuura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having ferroelectric capacitor and its manufac...
- Publication number 20060157762
- Publication date Jul 20, 2006
- FUJITSU LIMITED
- Yukinobu Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and fabricating method thereof
- Publication number 20060118847
- Publication date Jun 8, 2006
- FUJITSU LIMITED
- Tomohiro Takamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20050072998
- Publication date Apr 7, 2005
- FUJITSU LIMITED
- Jirou Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor capacitor with diffusion prevention layer
- Publication number 20040184218
- Publication date Sep 23, 2004
- FUJITSU LIMITED
- Wensheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device
- Publication number 20040185579
- Publication date Sep 23, 2004
- FUJITSU LIMITED
- Mitsushi Fujiki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capacitor and method of manufacturing the same
- Publication number 20030022454
- Publication date Jan 30, 2003
- FUJITSU LIMITED
- Wensheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a ferroelectric capacitor
- Publication number 20020190293
- Publication date Dec 19, 2002
- FUJITSU LIMITED
- Jeffrey Scott Cross
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for producing a strontium ruthenium oxide protective layer...
- Publication number 20020149040
- Publication date Oct 17, 2002
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS

Mitsushi Fujiki

Person

Patents Grantslast 30 patents

Semiconductor device and method for manufacturing the same having i...

Semiconductor device and fabricating method thereof

Method for forming ferroelectric capacitor and method for fabricati...

Semiconductor device having ferroelectric capacitor and its manufac...

Semiconductor device with specifically shaped contact holes

Semiconductor capacitor with diffusion prevention layer

Semiconductor capacitor with diffusion prevention layer

Process for producing a strontium ruthenium oxide protective layer...

Ferroelectric capacitor having a PZT layer with an excess of Pb

Electronic device having perovskite-type oxide film, production the...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME

METHOD FOR FORMING FERROELECTRIC CAPACITOR AND METHOD FOR FABRICATI...

Manufacturing method of semiconductor device

Method for forming ferroelectric capacitor and method for fabricati...

Semiconductor device and manufacturing method thereof

Forming method of ferroelectric capacitor and manufacturing method...

Semiconductor device with ferroelectric capacitor and fabrication m...

Semiconductor device having ferroelectric capacitor and its manufac...

Semiconductor device and fabricating method thereof

Semiconductor device and manufacturing method thereof

Semiconductor capacitor with diffusion prevention layer

Method of manufacturing semiconductor device

Capacitor and method of manufacturing the same

Semiconductor device having a ferroelectric capacitor

Process for producing a strontium ruthenium oxide protective layer...