Mizue Ishikawa

Person

Yokohama-Shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic memory
- Patent number 10,490,736
- Issue date Nov 26, 2019
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device
- Patent number 10,453,513
- Issue date Oct 22, 2019
- Kabushiki Kaisha Toshiba
- Yushi Kato
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device
- Patent number 10,374,150
- Issue date Aug 6, 2019
- Kabushiki Kaisha Toshiba
- Yushi Kato
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device
- Patent number 10,360,960
- Issue date Jul 23, 2019
- Kabushiki Kaisha Toshiba
- Yushi Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory including a magnetoresistive device that includes a...
- Patent number 10,283,697
- Issue date May 7, 2019
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory
- Patent number 10,262,711
- Issue date Apr 16, 2019
- Kabushiki Kaisha Toshiba
- Mizue Ishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin transistor memory
- Patent number 9,842,635
- Issue date Dec 12, 2017
- Kabushiki Kaisha Toshiba
- Hideyuki Sugiyama
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Magnetic memory and semiconductor-integrated-circuit
- Patent number 9,570,137
- Issue date Feb 14, 2017
- Kabushiki Kaisha Toshiba
- Hideyuki Sugiyama
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Magnetic memory, spin element, and spin MOS transistor
- Patent number 9,536,583
- Issue date Jan 3, 2017
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive change memory
- Patent number 9,520,171
- Issue date Dec 13, 2016
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory, spin element, and spin MOS transistor
- Patent number 9,230,625
- Issue date Jan 5, 2016
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin transistor and memory
- Patent number 9,112,139
- Issue date Aug 18, 2015
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin MOSFET and reconfigurable logic circuit
- Patent number 9,112,131
- Issue date Aug 18, 2015
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked structure, spin transistor, and reconfigurable logic circuit
- Patent number 8,981,436
- Issue date Mar 17, 2015
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Magnetic memory element, magnetic memory device, spin transistor, a...
- Patent number 8,958,239
- Issue date Feb 17, 2015
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin transistors and memory
- Patent number 8,847,288
- Issue date Sep 30, 2014
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin MOSFET and reconfigurable logic circuit
- Patent number 8,637,946
- Issue date Jan 28, 2014
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin transistor, integrated circuit, and magnetic memory
- Patent number 8,618,590
- Issue date Dec 31, 2013
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit using spin MOSFETs, path transistor circuit with mem...
- Patent number 8,611,143
- Issue date Dec 17, 2013
- Kabushiki Kaisha Toshiba
- Hideyuki Sugiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Content addressable memory
- Patent number 8,576,601
- Issue date Nov 5, 2013
- Kabushiki Kaisha Toshiba
- Takao Marukame
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin MOSFET and reconfigurable logic circuit using the spin MOSFET
- Patent number 8,487,359
- Issue date Jul 16, 2013
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Pass transistor circuit with memory function, and switching box cir...
- Patent number 8,405,443
- Issue date Mar 26, 2013
- Kabushiki Kaisha Toshiba
- Hideyuki Sugiyama
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Nonvolatile memory circuit using spin MOS transistors
- Patent number 8,385,114
- Issue date Feb 26, 2013
- Kabushiki Kaisha Toshiba
- Hideyuki Sugiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Look-up table circuits and field programmable gate array
- Patent number 8,373,437
- Issue date Feb 12, 2013
- Kabushiki Kaisha Toshiba
- Hideyuki Sugiyama
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Spin transistor and method of manufacturing the same
- Patent number 8,357,962
- Issue date Jan 22, 2013
- Kabushiki Kaisha Toshiba
- Takao Marukame
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tunneling magnetoresistive effect element and spin MOS field-effect
- Patent number 8,335,059
- Issue date Dec 18, 2012
- Kabushiki Kaisha Toshiba
- Mizue Ishikawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,330,196
- Issue date Dec 11, 2012
- Kabushiki Kaisha Toshiba
- Takao Marukame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunneling magnetoresistive effect element and spin MOS field-effect...
- Patent number 8,243,400
- Issue date Aug 14, 2012
- Kabushiki Kaisha Toshiba
- Mizue Ishikawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nonvolatile memory circuit using spin MOS transistors
- Patent number 8,154,916
- Issue date Apr 10, 2012
- Kabushiki Kaisha Toshiba
- Hideyuki Sugiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin memory and spin transistor
- Patent number 8,139,403
- Issue date Mar 20, 2012
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC MEMORY
- Publication number 20190088860
- Publication date Mar 21, 2019
- KABUSHIKI KAISHA TOSHIBA
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20190080741
- Publication date Mar 14, 2019
- KABUSHIKI KAISHA TOSHIBA
- Yushi KATO
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY DEVICE
- Publication number 20190051818
- Publication date Feb 14, 2019
- KABUSHIKI KAISHA TOSHIBA
- Soichi OIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20180366639
- Publication date Dec 20, 2018
- KABUSHIKI KAISHA TOSHIBA
- Yushi KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY
- Publication number 20180268886
- Publication date Sep 20, 2018
- KABUSHIKI KAISHA TOSHIBA
- Mizue ISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20180174634
- Publication date Jun 21, 2018
- KABUSHIKI KAISHA TOSHIBA
- Yushi KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY
- Publication number 20180145247
- Publication date May 24, 2018
- KABUSHIKI KAISHA TOSHIBA
- Yoshiaki SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY
- Publication number 20180040807
- Publication date Feb 8, 2018
- KABUSHIKI KAISHA TOSHIBA
- Yoshiaki SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY
- Publication number 20170271574
- Publication date Sep 21, 2017
- KABUSHIKI KAISHA TOSHIBA
- Tomoaki INOKUCHI
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN TRANSISTOR MEMORY
- Publication number 20160276007
- Publication date Sep 22, 2016
- KABUSHIKI KAISHA TOSHIBA
- Hideyuki SUGIYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY AND SEMICONDUCTOR-INTEGRATED-CIRCUIT
- Publication number 20160196861
- Publication date Jul 7, 2016
- KABUSHIKI KAISHA TOSHIBA
- Hideyuki SUGIYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY, SPIN ELEMENT, AND SPIN MOS TRANSISTOR
- Publication number 20160078913
- Publication date Mar 17, 2016
- KABUSHIKI KAISHA TOSHIBA
- Tomoaki INOKUCHI
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE CHANGE MEMORY
- Publication number 20150357016
- Publication date Dec 10, 2015
- KABUSHIKI KAISHA TOSHIBA
- Tomoaki INOKUCHI
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN MOSFET
- Publication number 20150311305
- Publication date Oct 29, 2015
- KABUSHIKI KAISHA TOSHIBA
- Mizue ISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY, SPIN ELEMENT, AND SPIN MOS TRANSISTOR
- Publication number 20140301136
- Publication date Oct 9, 2014
- KABUSHIKI KAISHA TOSHIBA
- Tomoaki INOKUCHI
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN FET AND MAGNETORESISTIVE ELEMENT
- Publication number 20140291744
- Publication date Oct 2, 2014
- Kabushiki Kaisha Toshiba
- Yoshiaki SAITO
- B82 - NANO-TECHNOLOGY
Information Patent Application
STACKED STRUCTURE, SPIN TRANSISTOR, AND RECONFIGURABLE LOGIC CIRCUIT
- Publication number 20140117427
- Publication date May 1, 2014
- KABUSHIKI KAISHA TOSHIBA
- Yoshiaki SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN MOSFET AND RECONFIGURABLE LOGIC CIRCUIT
- Publication number 20140097474
- Publication date Apr 10, 2014
- KABUSHIKI KAISHA TOSHIBA
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN TRANSISTORS AND MEMORY
- Publication number 20130248941
- Publication date Sep 26, 2013
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN TRANSISTOR AND MEMORY
- Publication number 20130075843
- Publication date Mar 28, 2013
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY DEVICE, SPIN TRANSISTOR, A...
- Publication number 20130077388
- Publication date Mar 28, 2013
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- G11 - INFORMATION STORAGE
Information Patent Application
TUNNELING MAGNETORESISTIVE EFFECT ELEMENT AND SPIN MOS FIELD-EFFECT
- Publication number 20120273856
- Publication date Nov 1, 2012
- Mizue ISHIKAWA
- G01 - MEASURING TESTING
Information Patent Application
MEMORY CIRCUIT USING SPIN MOSFETS, PATH TRANSISTOR CIRCUIT WITH MEM...
- Publication number 20120250399
- Publication date Oct 4, 2012
- Kabushiki Kaisha Toshiba
- Hideyuki SUGIYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
PASS TRANSISTOR CIRCUIT WITH MEMORY FUNCTION, AND SWITCHING BOX CIR...
- Publication number 20120223762
- Publication date Sep 6, 2012
- Kabushiki Kaisha Toshiba
- Hideyuki SUGIYAMA
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
CONTENT ADDRESSABLE MEMORY
- Publication number 20120218802
- Publication date Aug 30, 2012
- Takao MARUKAME
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120168838
- Publication date Jul 5, 2012
- Kabushiki Kaisha Toshiba
- Takao MARUKAME
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY CIRCUIT USING SPIN MOS TRANSISTORS
- Publication number 20120119274
- Publication date May 17, 2012
- Kabushiki Kaisha Toshiba
- Hideyuki SUGIYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
LOOK-UP TABLE CIRCUITS AND FIELD PROGRAMMABLE GATE ARRAY
- Publication number 20120074984
- Publication date Mar 29, 2012
- Kabushiki Kaisha Toshiba
- Hideyuki SUGIYAMA
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SPIN MOSFET AND RECONFIGURABLE LOGIC CIRCUIT
- Publication number 20120019283
- Publication date Jan 26, 2012
- KABUSHIKI KAISHA TOSHIBA
- Yoshiaki Saito
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
SPIN MEMORY AND SPIN TRANSISTOR
- Publication number 20110228596
- Publication date Sep 22, 2011
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- G11 - INFORMATION STORAGE

Mizue Ishikawa

Person

Patents Grantslast 30 patents

Magnetic memory

Magnetic memory device

Magnetic memory device

Magnetic memory device

Magnetic memory including a magnetoresistive device that includes a...

Magnetic memory

Spin transistor memory

Magnetic memory and semiconductor-integrated-circuit

Magnetic memory, spin element, and spin MOS transistor

Resistive change memory

Magnetic memory, spin element, and spin MOS transistor

Spin transistor and memory

Spin MOSFET and reconfigurable logic circuit

Stacked structure, spin transistor, and reconfigurable logic circuit

Magnetic memory element, magnetic memory device, spin transistor, a...

Spin transistors and memory

Spin MOSFET and reconfigurable logic circuit

Spin transistor, integrated circuit, and magnetic memory

Memory circuit using spin MOSFETs, path transistor circuit with mem...

Content addressable memory

Spin MOSFET and reconfigurable logic circuit using the spin MOSFET

Pass transistor circuit with memory function, and switching box cir...

Nonvolatile memory circuit using spin MOS transistors

Look-up table circuits and field programmable gate array

Spin transistor and method of manufacturing the same

Tunneling magnetoresistive effect element and spin MOS field-effect

Semiconductor device and method of manufacturing the same

Tunneling magnetoresistive effect element and spin MOS field-effect...

Nonvolatile memory circuit using spin MOS transistors

Spin memory and spin transistor

Patents Applicationslast 30 patents

MAGNETIC MEMORY

MAGNETIC MEMORY DEVICE

MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY DEVICE

MAGNETIC MEMORY DEVICE

MAGNETIC MEMORY

MAGNETIC MEMORY DEVICE

MAGNETIC MEMORY

MAGNETIC MEMORY

MAGNETIC MEMORY

SPIN TRANSISTOR MEMORY

MAGNETIC MEMORY AND SEMICONDUCTOR-INTEGRATED-CIRCUIT

MAGNETIC MEMORY, SPIN ELEMENT, AND SPIN MOS TRANSISTOR

RESISTIVE CHANGE MEMORY

SPIN MOSFET

MAGNETIC MEMORY, SPIN ELEMENT, AND SPIN MOS TRANSISTOR

SPIN FET AND MAGNETORESISTIVE ELEMENT

STACKED STRUCTURE, SPIN TRANSISTOR, AND RECONFIGURABLE LOGIC CIRCUIT

SPIN MOSFET AND RECONFIGURABLE LOGIC CIRCUIT

SPIN TRANSISTORS AND MEMORY

SPIN TRANSISTOR AND MEMORY

MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY DEVICE, SPIN TRANSISTOR, A...

TUNNELING MAGNETORESISTIVE EFFECT ELEMENT AND SPIN MOS FIELD-EFFECT

MEMORY CIRCUIT USING SPIN MOSFETS, PATH TRANSISTOR CIRCUIT WITH MEM...

PASS TRANSISTOR CIRCUIT WITH MEMORY FUNCTION, AND SWITCHING BOX CIR...

CONTENT ADDRESSABLE MEMORY

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

NONVOLATILE MEMORY CIRCUIT USING SPIN MOS TRANSISTORS

LOOK-UP TABLE CIRCUITS AND FIELD PROGRAMMABLE GATE ARRAY

SPIN MOSFET AND RECONFIGURABLE LOGIC CIRCUIT

SPIN MEMORY AND SPIN TRANSISTOR