Mohamed Imam

Person

Chandler, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Device package having a lateral power transistor with segmented chi...
- Patent number 12,040,302
- Issue date Jul 16, 2024
- Infineon Technologies Austria AG
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage blocking III-V semiconductor device
- Patent number 11,923,448
- Issue date Mar 5, 2024
- Infineon Technologies Austria AG
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Type III-V semiconductor substrate with monolithically integrated c...
- Patent number 11,916,068
- Issue date Feb 27, 2024
- Infineon Technologies Austria AG
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a bidirectional switch and discharge ci...
- Patent number 11,862,630
- Issue date Jan 2, 2024
- Infineon Technologies Austria AG
- Mohamed Imam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage blocking III-V semiconductor device
- Patent number 11,588,024
- Issue date Feb 21, 2023
- Infineon Technologies Austria AG
- Shu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching circuit, gate driver and method of operating a transistor...
- Patent number 11,575,377
- Issue date Feb 7, 2023
- Infineon Technologies Austria AG
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Type III-V semiconductor substrate with monolithically integrated c...
- Patent number 11,545,485
- Issue date Jan 3, 2023
- Infineon Technologies Austria AG
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage blocking III-V semiconductor device
- Patent number 11,251,294
- Issue date Feb 15, 2022
- Infineon Technologies Austria AG
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge trapping prevention III-Nitride transistor
- Patent number 10,211,329
- Issue date Feb 19, 2019
- Infineon Technologies Americas Corp.
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite group III-V and group IV transistor having a switched sub...
- Patent number 9,461,034
- Issue date Oct 4, 2016
- Infineon Technologies Americas Corp.
- Yang Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V HEMT having a selectably floating substrate
- Patent number 9,397,089
- Issue date Jul 19, 2016
- Infineon Technologies Americas Corp.
- Yang Pan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240088138
- Publication date Mar 14, 2024
- Infineon Technologies Austria AG
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Blocking III-V Semiconductor Device
- Publication number 20230207636
- Publication date Jun 29, 2023
- Infineon Technologies Austria AG
- Shu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING CIRCUIT, GATE DRIVER FOR A GROUP III NITRIDE-BASED ENHANC...
- Publication number 20230139374
- Publication date May 4, 2023
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Type III-V Semiconductor Substrate with Monolithically Integrated C...
- Publication number 20230049654
- Publication date Feb 16, 2023
- Infineon Technologies Austria AG
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL III/V HETEROSTRUCTURE FIELD EFFECT TRANSISTOR
- Publication number 20230052141
- Publication date Feb 16, 2023
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HOLE DRAINING STRUCTURE FOR SUPPRESSION OF HOLE ACCUMULATION
- Publication number 20220359739
- Publication date Nov 10, 2022
- Infineon Technologies Austria AG
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Type III-V Semiconductor Substrate with Monolithically Integrated C...
- Publication number 20220293589
- Publication date Sep 15, 2022
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE PACKAGE HAVING A LATERAL POWER TRANSISTOR WITH SEGMENTED CHI...
- Publication number 20220157764
- Publication date May 19, 2022
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Blocking III-V Semiconductor Device
- Publication number 20220130987
- Publication date Apr 28, 2022
- Infineon Technologies Austria AG
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING CIRCUIT, GATE DRIVER AND METHOD OF OPERATING A TRANSISTOR...
- Publication number 20210344340
- Publication date Nov 4, 2021
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Blocking III-V Semiconductor Device
- Publication number 20210305417
- Publication date Sep 30, 2021
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Bidirectional Switch and Discharge Ci...
- Publication number 20190326280
- Publication date Oct 24, 2019
- Infineon Technologies Austria AG
- Mohamed Imam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Blocking III-V Semiconductor Device
- Publication number 20180269282
- Publication date Sep 20, 2018
- Infineon Technologies Austria AG
- Shu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge Trapping Prevention III-Nitride Transistor
- Publication number 20170365701
- Publication date Dec 21, 2017
- Infineon Technologies Americas Corp.
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-V Lateral Transistor with Backside Contact
- Publication number 20160005821
- Publication date Jan 7, 2016
- International Rectifier Corporation
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-V Transistor with Voltage Controlled Substrate
- Publication number 20160005816
- Publication date Jan 7, 2016
- International Rectifier Corporation
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-V Transistor Utilizing a Substrate Having a Dielectricall...
- Publication number 20160005845
- Publication date Jan 7, 2016
- International Rectifier Corporation
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-V HEMT Having a Diode Controlled Substrate
- Publication number 20150371987
- Publication date Dec 24, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- Yang Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite Group III-V and Group IV Transistor Having a Switched Sub...
- Publication number 20150371982
- Publication date Dec 24, 2015
- International Rectifier Corporation
- Yang Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-V HEMT Having a Selectably Floating Substrate
- Publication number 20150371986
- Publication date Dec 24, 2015
- International Rectifier Corporation
- Yang Pan
- H01 - BASIC ELECTRIC ELEMENTS

Mohamed Imam

Person

Patents Grantslast 30 patents

Device package having a lateral power transistor with segmented chi...

High voltage blocking III-V semiconductor device

Type III-V semiconductor substrate with monolithically integrated c...

Semiconductor device having a bidirectional switch and discharge ci...

High voltage blocking III-V semiconductor device

Switching circuit, gate driver and method of operating a transistor...

Type III-V semiconductor substrate with monolithically integrated c...

High voltage blocking III-V semiconductor device

Charge trapping prevention III-Nitride transistor

Composite group III-V and group IV transistor having a switched sub...

Group III-V HEMT having a selectably floating substrate

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

High Voltage Blocking III-V Semiconductor Device

SWITCHING CIRCUIT, GATE DRIVER FOR A GROUP III NITRIDE-BASED ENHANC...

Type III-V Semiconductor Substrate with Monolithically Integrated C...

LATERAL III/V HETEROSTRUCTURE FIELD EFFECT TRANSISTOR

HOLE DRAINING STRUCTURE FOR SUPPRESSION OF HOLE ACCUMULATION

Type III-V Semiconductor Substrate with Monolithically Integrated C...

DEVICE PACKAGE HAVING A LATERAL POWER TRANSISTOR WITH SEGMENTED CHI...

High Voltage Blocking III-V Semiconductor Device

SWITCHING CIRCUIT, GATE DRIVER AND METHOD OF OPERATING A TRANSISTOR...

High Voltage Blocking III-V Semiconductor Device

Semiconductor Device Having a Bidirectional Switch and Discharge Ci...

High Voltage Blocking III-V Semiconductor Device

Charge Trapping Prevention III-Nitride Transistor

Group III-V Lateral Transistor with Backside Contact

Group III-V Transistor with Voltage Controlled Substrate

Group III-V Transistor Utilizing a Substrate Having a Dielectricall...

Group III-V HEMT Having a Diode Controlled Substrate

Composite Group III-V and Group IV Transistor Having a Switched Sub...

Group III-V HEMT Having a Selectably Floating Substrate