Mohamed N. Darwish

Person

Campbell, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
MOSFET with distributed doped P-shield zones under trenches
- Patent number 12,057,482
- Issue date Aug 6, 2024
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral transistors and methods with low-voltage-drop shunt to body...
- Patent number 11,888,047
- Issue date Jan 30, 2024
- MaxPower Semiconductor, Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density power device with selectively shielded recessed field...
- Patent number 11,316,021
- Issue date Apr 26, 2022
- MaxPower Semiconductor Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate power device and its method of fabrication
- Patent number 11,289,596
- Issue date Mar 29, 2022
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral transistors and methods with low-voltage-drop shunt to body...
- Patent number 10,720,510
- Issue date Jul 21, 2020
- MaxPower Semiconductor Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench transistors and methods with low-voltage-drop shunt to body...
- Patent number 10,720,511
- Issue date Jul 21, 2020
- MaxPower Semiconductor Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical rectifier with added intermediate region
- Patent number 10,593,813
- Issue date Mar 17, 2020
- MaxPower Semiconductor Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral semiconductor power devices
- Patent number 10,529,810
- Issue date Jan 7, 2020
- MaxPower Semiconductor, Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device having a polysilicon-filled trench with a tapered oxid...
- Patent number 10,510,863
- Issue date Dec 17, 2019
- MaxPower Semiconductor, Inc.
- Richard A Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor devices, methods, and structures with embedded...
- Patent number 10,325,980
- Issue date Jun 18, 2019
- MaxPower Semiconductor Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral power MOSFET with non-horizontal RESURF structure
- Patent number 10,186,573
- Issue date Jan 22, 2019
- MaxPower Semiconductor, Inc.
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOS-gated device with high dopant concentration N-we...
- Patent number 10,157,983
- Issue date Dec 18, 2018
- MaxPower Semiconductor Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench transistors and methods with low-voltage-drop shunt to body...
- Patent number 10,128,353
- Issue date Nov 13, 2018
- MaxPower Semiconductor Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor on insulator devices containing permanent charge
- Patent number 10,062,788
- Issue date Aug 28, 2018
- MaxPower Semiconductor Inc.
- Amit Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS-gated power devices, methods, and integrated circuits
- Patent number 10,014,404
- Issue date Jul 3, 2018
- MaxPower Semiconductor Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor devices, methods, and structures with embedded...
- Patent number 10,014,365
- Issue date Jul 3, 2018
- MaxPower Semiconductor Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral transistors and methods with low-voltage-drop shunt to body...
- Patent number 9,997,614
- Issue date Jun 12, 2018
- MaxPower Semiconductor Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET having lateral channel, vertical current path, and P-r...
- Patent number 9,947,779
- Issue date Apr 17, 2018
- MaxPower Semiconductor Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power devices, structures, components, and methods using lateral dr...
- Patent number 9,923,556
- Issue date Mar 20, 2018
- MaxPower Semiconductor, Inc.
- Mohamed N. Darwish
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Trench transistors and methods with low-voltage-drop shunt to body...
- Patent number 9,859,400
- Issue date Jan 2, 2018
- MaxPower Semiconductor, Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices, components and methods combining trench field plates with...
- Patent number 9,847,413
- Issue date Dec 19, 2017
- MaxPower Semiconductor Inc.
- Mohamed N. Darwish
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Methods of operating power semiconductor devices and structures
- Patent number 9,842,917
- Issue date Dec 12, 2017
- MaxPower Semiconductor, Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device having a polysilicon-filled trench with a tapered oxid...
- Patent number 9,812,548
- Issue date Nov 7, 2017
- MaxPower Semiconductor, Inc.
- Richard A Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET having planar channel, vertical current path, and top...
- Patent number 9,761,702
- Issue date Sep 12, 2017
- MaxPower Semiconductor
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with electric field relaxation portion in insu...
- Patent number 9,716,152
- Issue date Jul 25, 2017
- Rohm Co., Ltd.
- Masaki Nagata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,590,075
- Issue date Mar 7, 2017
- MaxPower Semiconductor, Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOSFET having planar channel and its method of fabri...
- Patent number 9,461,127
- Issue date Oct 4, 2016
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices, components and methods combining trench field plates with...
- Patent number 9,419,084
- Issue date Aug 16, 2016
- MaxPower Semiconductor Inc.
- Mohamed N. Darwish
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Lateral devices containing permanent charge
- Patent number 9,419,085
- Issue date Aug 16, 2016
- MaxPower Semiconductor, Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power devices, structures, components, and methods using lateral dr...
- Patent number 9,385,227
- Issue date Jul 5, 2016
- MaxPower Semiconductor, Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL MOSFET USING A SILICON CARBIDE LAYER AND A SILICON LAYER F...
- Publication number 20240379838
- Publication date Nov 14, 2024
- MaxPower Semiconductor, Inc.
- Mohamed Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH DISTRIBUTED DOPED P-SHIELD ZONES UNDER TRENCHES HAVING...
- Publication number 20240347585
- Publication date Oct 17, 2024
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MOSFET WITH HIGH SHORT CIRCUIT WITHSTAND TIME CAPABILITY
- Publication number 20240339494
- Publication date Oct 10, 2024
- MaxPower Semiconductor, Inc.
- Mohamed Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH DISTRIBUTED DOPED P-SHIELD ZONES UNDER TRENCHES
- Publication number 20220052170
- Publication date Feb 17, 2022
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral Transistors and Methods with Low-Voltage-Drop Shunt to Body...
- Publication number 20210175348
- Publication date Jun 10, 2021
- MAXPOWER SEMICONDUCTOR INC.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Density Power Device with Selectively Shielded Recessed Field...
- Publication number 20210083061
- Publication date Mar 18, 2021
- MAXPOWER SEMICONDUCTOR INC.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral Semiconductor Power Devices
- Publication number 20200279926
- Publication date Sep 3, 2020
- MAXPOWER SEMICONDUCTOR INC.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE POWER DEVICE AND ITS METHOD OF FABRICATION
- Publication number 20200273987
- Publication date Aug 27, 2020
- MAXPOWER SEMICONDUCTOR INC.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Devices, Methods, and Structures with Embedded...
- Publication number 20200098856
- Publication date Mar 26, 2020
- MAXPOWER SEMICONDUCTOR INC.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral Semiconductor Power Devices
- Publication number 20200006499
- Publication date Jan 2, 2020
- MaxPower Semiconductor, Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Shielded Trench MOSFETs and Related Fabrication Methods
- Publication number 20190122926
- Publication date Apr 25, 2019
- MAXPOWER SEMICONDUCTOR INC.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor on Insulator Devices Containing Permanent Charge
- Publication number 20190123210
- Publication date Apr 25, 2019
- MAXPOWER SEMICONDUCTOR INC.
- Amit Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS-Gated Power Devices, Methods, and Integrated Circuits
- Publication number 20190115464
- Publication date Apr 18, 2019
- MAXPOWER SEMICONDUCTOR INC.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Transistors and Methods with Low-Voltage-Drop Shunt to Body...
- Publication number 20190097025
- Publication date Mar 28, 2019
- MAXPOWER SEMICONDUCTOR INC.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Rectifier with Added Intermediate Region
- Publication number 20190067491
- Publication date Feb 28, 2019
- MAXPOWER SEMICONDUCTOR INC.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20190051743
- Publication date Feb 14, 2019
- MaxPower Semiconductor, Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench-Gated Heterostructure and Double-Heterostructure Active Devices
- Publication number 20180366569
- Publication date Dec 20, 2018
- MAXPOWER SEMICONDUCTOR INC.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of Trench-Gated Wide-Bandgap Devices
- Publication number 20180358449
- Publication date Dec 13, 2018
- MAXPOWER SEMICONDUCTOR INC.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Devices, Methods, and Structures with Embedded...
- Publication number 20180337230
- Publication date Nov 22, 2018
- MAXPOWER SEMICONDUCTOR INC.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral Transistors and Methods with Low-Voltage-Drop Shunt to Body...
- Publication number 20180323285
- Publication date Nov 8, 2018
- MAXPOWER SEMICONDUCTOR INC.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER MOS-GATED DEVICE WITH HIGH DOPANT CONCENTRATION N-WE...
- Publication number 20180261666
- Publication date Sep 13, 2018
- MAXPOWER SEMICONDUCTOR INC.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH TRANSISTORS AND METHODS WITH LOW-VOLTAGE-DROP SHUNT TO BODY...
- Publication number 20180138293
- Publication date May 17, 2018
- MAXPOWER SEMICONDUCTOR INC.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE HAVING A POLYSILICON-FILLED TRENCH WITH A TAPERED OXID...
- Publication number 20170365683
- Publication date Dec 21, 2017
- MaxPower Semiconductor, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICES, METHODS, AND STRUCTURES WITH EMBEDDED...
- Publication number 20170352724
- Publication date Dec 7, 2017
- MaxPower Semiconductor, Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MOSFET HAVING PLANAR CHANNEL, VERTICAL CURRENT PATH, AND TOP...
- Publication number 20170330962
- Publication date Nov 16, 2017
- MAXPOWER SEMICONDUCTOR INC.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL POWER MOSFET WITH NON-HORIZONTAL RESURF STRUCTURE
- Publication number 20170077221
- Publication date Mar 16, 2017
- MaxPower Semiconductor, Inc.
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE HAVING A POLYSILICON-FILLED TRENCH WITH A TAPERED OXID...
- Publication number 20170069727
- Publication date Mar 9, 2017
- MaxPower Semiconductor, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20170062574
- Publication date Mar 2, 2017
- Rohm Co., Ltd.
- Masaki NAGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Devices, Structures, Components, and Methods Using Lateral Dr...
- Publication number 20160365848
- Publication date Dec 15, 2016
- MAXPOWER SEMICONDUCTOR INC.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MOSFET HAVING PLANAR CHANNEL, VERTICAL CURRENT PATH, AND TOP...
- Publication number 20160359029
- Publication date Dec 8, 2016
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS

Mohamed N. Darwish

Person

Patents Grantslast 30 patents

MOSFET with distributed doped P-shield zones under trenches

Lateral transistors and methods with low-voltage-drop shunt to body...

High density power device with selectively shielded recessed field...

Split gate power device and its method of fabrication

Lateral transistors and methods with low-voltage-drop shunt to body...

Trench transistors and methods with low-voltage-drop shunt to body...

Vertical rectifier with added intermediate region

Lateral semiconductor power devices

Power device having a polysilicon-filled trench with a tapered oxid...

Power semiconductor devices, methods, and structures with embedded...

Lateral power MOSFET with non-horizontal RESURF structure

Vertical power MOS-gated device with high dopant concentration N-we...

Trench transistors and methods with low-voltage-drop shunt to body...

Semiconductor on insulator devices containing permanent charge

MOS-gated power devices, methods, and integrated circuits

Power semiconductor devices, methods, and structures with embedded...

Lateral transistors and methods with low-voltage-drop shunt to body...

Power MOSFET having lateral channel, vertical current path, and P-r...

Power devices, structures, components, and methods using lateral dr...

Trench transistors and methods with low-voltage-drop shunt to body...

Devices, components and methods combining trench field plates with...

Methods of operating power semiconductor devices and structures

Power device having a polysilicon-filled trench with a tapered oxid...

Power MOSFET having planar channel, vertical current path, and top...

Semiconductor device with electric field relaxation portion in insu...

Semiconductor device

Vertical power MOSFET having planar channel and its method of fabri...

Devices, components and methods combining trench field plates with...

Lateral devices containing permanent charge

Power devices, structures, components, and methods using lateral dr...

Patents Applicationslast 30 patents

VERTICAL MOSFET USING A SILICON CARBIDE LAYER AND A SILICON LAYER F...

MOSFET WITH DISTRIBUTED DOPED P-SHIELD ZONES UNDER TRENCHES HAVING...

VERTICAL MOSFET WITH HIGH SHORT CIRCUIT WITHSTAND TIME CAPABILITY

MOSFET WITH DISTRIBUTED DOPED P-SHIELD ZONES UNDER TRENCHES

Lateral Transistors and Methods with Low-Voltage-Drop Shunt to Body...

High Density Power Device with Selectively Shielded Recessed Field...

Lateral Semiconductor Power Devices

SPLIT GATE POWER DEVICE AND ITS METHOD OF FABRICATION

Power Semiconductor Devices, Methods, and Structures with Embedded...

Lateral Semiconductor Power Devices

Self-Aligned Shielded Trench MOSFETs and Related Fabrication Methods

Semiconductor on Insulator Devices Containing Permanent Charge

MOS-Gated Power Devices, Methods, and Integrated Circuits

Trench Transistors and Methods with Low-Voltage-Drop Shunt to Body...

Vertical Rectifier with Added Intermediate Region

Semiconductor Device

Trench-Gated Heterostructure and Double-Heterostructure Active Devices

Fabrication of Trench-Gated Wide-Bandgap Devices

Power Semiconductor Devices, Methods, and Structures with Embedded...

Lateral Transistors and Methods with Low-Voltage-Drop Shunt to Body...

VERTICAL POWER MOS-GATED DEVICE WITH HIGH DOPANT CONCENTRATION N-WE...

TRENCH TRANSISTORS AND METHODS WITH LOW-VOLTAGE-DROP SHUNT TO BODY...

POWER DEVICE HAVING A POLYSILICON-FILLED TRENCH WITH A TAPERED OXID...

POWER SEMICONDUCTOR DEVICES, METHODS, AND STRUCTURES WITH EMBEDDED...

POWER MOSFET HAVING PLANAR CHANNEL, VERTICAL CURRENT PATH, AND TOP...

LATERAL POWER MOSFET WITH NON-HORIZONTAL RESURF STRUCTURE

POWER DEVICE HAVING A POLYSILICON-FILLED TRENCH WITH A TAPERED OXID...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Power Devices, Structures, Components, and Methods Using Lateral Dr...

POWER MOSFET HAVING PLANAR CHANNEL, VERTICAL CURRENT PATH, AND TOP...